Taiwan Semiconductor Manufacturing Comp. Ltd.

Yun-Ju Fan

Cheng-Chi Chuang

Lin-Yu Huang

Huan-Chieh Su

Chih-Hao Wang

Sheng-Tsung Wang

A semiconductor structure is provided, and includes a first fin structure, a second fin structure, and a third fin structure over a substrate. The second fin structure is located between the first fin structure and the third fin structure. The semiconductor structure also includes a fin isolation structure formed between the first fin structure and the third fin structure; and a gate structure formed over the first fin structure, the second fin structure, the third fin structure and the fin isolation structure. The semiconductor structure further includes a plurality of epitaxial structures formed over the first fin structure, the second fin structure and the third fin structure. The semiconductor structure includes a dielectric material over the first epitaxial structure, the second epitaxial structure, and the third epitaxial structure; and a contact formed in the dielectric material and connected to the first epitaxial structure and the third epitaxial structure.

Growing community of inventors

Hsinchu, Taiwan

Yun-Ju Fan