Taiwan Semiconductor Manufacturing Comp. Ltd.

Yun-Hua Chen

Huan-Just Lin

Yi-Chun Huang

Wen-Kuo Hsieh

Yang-Cheng Wu

In an embodiment, a method includes: depositing a protective layer on a source/drain region and a gate mask, the gate mask disposed on a gate structure, the gate structure disposed on a channel region of a substrate, the channel region adjoining the source/drain region; etching an opening through the protective layer, the opening exposing the source/drain region; depositing a metal in the opening and on the protective layer; annealing the metal to form a metal-semiconductor alloy region on the source/drain region; and removing residue of the metal from the opening with a cleaning process, the protective layer covering the gate mask during the cleaning process.

Transistor source/drain contacts and methods of forming the same

A method for forming a contact is provided. The method includes: forming a first dielectric layer over a substrate; forming a second dielectric layer over the first dielectric layer; patterning the second dielectric layer to form a first recess; patterning the first dielectric layer by a first etchant through the first recess to form a second recess, wherein the first etchant has a higher etching rate with respect to the first dielectric layer than with respect to the second dielectric layer and further wherein the second recess is aligned with the first recess; and forming a continuous contact plug in the first recess and the second recess.

Growing community of inventors

Hsinchu County, Taiwan

Yun-Hua Chen