Clariant Finance (bvi) Limited

Other

Clariant International Ltd

Yuko Yamaguchi

Yoshiaki Kinoshita

Satoru Funato

Georg Pawlowski

Hiroshi Okazaki

Aritaka Hishida

Xiao-Ming Ma

Koji Shimomura

Naoko Tsugama

A resist composition is prepared by reacting an alkali-soluble polymer having a phenolic hydroxyl or carboxyl groups with a vinyl ether compound in an aprotic solvent, such as propylene glycol monomethyl ether acetate, in the presence of an acid catalyst, suspending the reaction by the addition of a base, and directly adding a photoacid generator to the reaction solution. When a dialkyl dicarbonate is used in stead of the vinyl ether compound, a resist composition is prepared by carrying out the reaction in the presence of a basic catalyst and adding a photoacid generator directly to the reaction. Thus resist compositions can be prepared without isolating or purifying an alkali-soluble polymer which has been substituted by a catalytic reaction.

Process for preparing resists

A method of forming a pattern in which production of reaction products in the interface between an organic anti-reflective coating and a radiation sensitive material coating is suppressed, the number of residues of an etchable layer formed after etching is decreased, and which provides a etched pattern having high resolution and good dimensional accuracy. According to the method, an etchable layer ( ) composed of polysilicon coating an organic anti-reflective coating ( ), and a radiation sensitive material coating ( ) composed of a chemically amplified resist material containing as acid generators both (a) onium salt compound and (b) at least one of a sulfone compound and a sulfonate compound are formed on a semiconductor substrate ( ), the radiation sensitive material coating ( ) is imagewise exposed through the mask ( ) and developed to form a patterned radiation sensitive material coating ( ). Thereafter, preferably the anti-reflective coating is etched using a mixture gas of SO and O , further the etchable layer is dry-etched to form a pattern of the etchable layer.

Pattern forming method

A chemically amplified resist composition is disclosed which shows a high sensitivity, high resolution, excellent processing adaptability and excellent processing stability, which can form good pattern profile and which is suited as a finely processable material for use in manufacturing integrated circuit elements or the like. The chemically amplified resist composition comprises at least (a) an organic material containing a substituent or substituents capable of being released in the presence of an acid and (b) compounds capable of generating an acid upon exposure to radiation (acid-generators), composed of at least one onium salt and at least one of sulfone compounds and sulfonate compounds. This chemically amplified resist composition preferably further contains a basic compound.

Chemically amplified resist composition

Radiation-sensitive composition of chemical amplification type

Growing community of inventors

Isehara, Japan

Yuko Yamaguchi