Hitachi, Ltd.

Hitachi-high-technologies Corporation

Renesas Technology Corp.

Hitachi Kenki Fine Tech Co., Ltd.

Other

Yukio Kembo

Minori Noguchi

Yoshimasa Ohshima

Hidetoshi Nishiyama

Toshihiko Nakata

Takahiro Jingu

Takanori Ninomiya

Shunichi Matsumoto

Yoshio Morishige

Shuichi Chikamatsu

Keiji Sakai

Hisato Nakamura

Ryouji Matsunaga

Asahiro Kuni

Tetsuya Watanabe

Hiroshi Morioka

Minoru Ikeda

Nobuyuki Akiyama

Takafumi Morimoto

Toru Kurenuma

Masahiro Watanabe

Manabu Edamura

Akira Inagaki

Shuichi Baba

Kazuhiko Matsuoka

Motoya Taniguchi

Yoshiharu Shigyo

Ryuichi Funatsu

Yoshihiro Komeyama

Shunji Maeda

Hiroshi Kuroda

Yukihiro Shibata

Mineo Nomoto

Yasuo Nakagawa

Yuzo Taniguchi

Satoshi Sekino

Keiichi Okamoto

Hiroshi Yamaguchi

Kenji Watanabe

Masataka Shiba

Takehiko Kitamori

Takenori Hirose

Susumu Aiuchi

Mitsuyoshi Koizumi

Hideaki Doi

Hiroshi Makihira

Shigenobu Maruyama

Makiko Kohno

Yuichi Kunitomo

Yoshiyuki Nagano

Tsuguo Sawada

Nobuhiko Aoki

Fumiaki Endo

Ryuuichi Funatsu

Tetsuyai Watanabe

In the case of measuring a pattern having a steep side wall, a probe adheres to the side wall by the van der Waals forces acting between the probe and the side wall when approaching the pattern side wall, and an error occurs in a measured profile of the side wall portion. When a pattern having a groove width almost equal to a probe diameter is measured, the probe adheres to both side walls, the probe cannot reach the groove bottom, and the groove depth cannot be measured. When the probe adheres to a pattern side wall in measurements of a microscopic high-aspect ratio pattern using an elongated probe, the probe is caused to reach the side wall bottom by detecting the adhesion of the probe to the pattern side wall, and temporarily increasing a contact force between the probe and the sample. Also, by obtaining the data of the amount of torsion of a cantilever with the shape data of the pattern, a profile error of the side wall portion by the adhesion is corrected by the obtained data of the amount of torsion.

Scanning probe microscope

A scanning probe microscope, capable of performing shape measurement not affected by electrostatic charge distribution of a sample, which: monitors an electrostatic charge state by detecting a change in a flexure or vibrating state of a cantilever due to electrostatic charges in synchronization with scanning during measurement with relative scanning between the probe and the sample, and makes potential adjustment so as to cancel an influence of electrostatic charge distribution, thus preventing damage of the probe or the sample due to discharge and achieving reduction in measurement errors due to electrostatic charge distribution.

A method for detecting defects on an object includes an illumination optical unit which obliquely projects a laser focused onto a line on a surface of the object and white-color, a table unit which mounts the specimen and which is movable, a detection optical unit which detects with an image sensor an image of light formed by light reflected from the object and passed through a filter which blocks diffraction light resulting from patterns formed on the object, a signal processor which processes a signal outputted from the image sensor of the detection optical unit to extract defects of the object, and a display unit which displays information of defects extracted by the signal processor. The filter is adjustable.

Method of detecting defects on an object

An apparatus for detecting defects on a specimen including an illumination optical unit which obliquely projects a laser onto a region which is longer in one direction than in a direction transverse to said one direction on a surface of a specimen, a table unit which mounts said specimen and which is movable, a detection optical unit which detects with an image sensor an image of light formed by light reflected from said specimen in both directions of the one direction and the direction transverse and which reflected light in both directions is formed on said image sensor while said table is moving, a signal processor which processes a signal outputted from said image sensor of said detection optical unit to extract defects of said specimen. A display unit which displays information of defects extracted by said signal processor.

Apparatus and method for testing defects

A method for detecting defects on a specimen includes mounting a specimen on a table with which is movable, obliquely projecting a laser as a line onto a surface of the specimen, detecting with an image sensor an image of light formed by light reflected from the specimen and passed through a filter which blocks scattered light resulting from repetitive patterns formed on the specimen, processing a signal outputted from the image sensor to extract defects of the specimen, and a displaying information of defects extracted by the signal processor.

With a scanning probe microscope, if a plurality of sample properties are measured using a scanning scheme of allowing a probe to approach and withdraw from a sample, the sample properties need to be accurately and reliably detected in the minimum required measurement time. Further, the acting force between the probe and the sample varies depending on the type of the probe and the wear condition of a probe tip. Thus, disadvantageously, property values acquired using different probes cannot be compared with one another unless the artifactual effect of the measuring probes are eliminated. In accordance with the present invention, with a scanning probe microscope, the probe is brought into intermittent contact with the sample, while driving means repeatedly allows the probe to approach and withdraw from the sample with a variable amplitude. The sample property is thus acquired at a high speed. Further, a calibration sample is used in a given environment (given temperature and humidity) to acquire a force curve for at least one point. Information obtained from the force curve is used to correct measurements to display the distribution of the sample property.

A scanning probe microscope for measuring a surface profile of a sample by bringing a probe into close proximity to or contact with the surface of the sample and scanning the sample surface includes: a sample stage movable in at least one axis direction; the probe which is brought into close proximity to or contact with the surface of the sample mounted on the sample stage and scans the sample surface; a probe-driving unit for moving the probe three-dimensionally; a probe deflection detector for detecting a deflection of the probe; and an observation optical system which has an objective lens and observes the probe disposed on substantially the optical axis of the objective lens, and the sample. The probe-driving unit is disposed with three sets of paired drive sources arranged essentially with symmetry with respect to the optical axis of the objective lens.

A defect inspection apparatus includes an illumination optical unit for obliquely illuminating an object with a slit-like shaped laser, a first detection optical unit for detecting a first image formed by light reflected from the object by the illumination of the slit-like shaped laser and reflected in a first direction substantially normal to a surface of the object, a second detection optical unit for detecting a second image formed by light reflected from the object by the illumination of the slit-like shaped laser and reflected in a second direction inclined to the normal direction to the surface of the object, an image signal processing unit which processes a signal outputted from the first detection optical unit and a signal outputted from the second detection optical unit, and an output unit which outputs information processed by the image signal processing unit.

A method an apparatus for measuring the depths of many fine holes formed in the surface of a sample by etching. Positional information on a plurality of hole patterns is acquired by scanning, with a stylus, the surface of the sample in which the hole patterns are formed by etching. The depths of the plurality of hole patterns are measured by scanning, with the stylus, bottom faces of the plurality of hole patterns and the surface of the sample in the respective vicinities of the hole patterns on the basis of the positional information that has been acquired. Information on distribution of the depths of the plurality of hole patterns is displayed on a screen on the basis of information on the measured depths of the plurality of hole patterns and the positional information on each of the hole patterns.

Method and apparatus for measuring depth of holes formed on a specimen

An apparatus and method for detecting defects on a specimen includes an illumination optical unit which obliquely projects a laser onto a region which is longer in one direction on a surface of a specimen than in a transverse direction, a table unit which mounts the specimen and which is movable, a detection optical unit which detects light from the specimen illuminated by the laser with an image sensor while the table is moving, and a signal processor. The signal processor processes a signal outputted from the image sensor of the detection optical unit and converted to a digital signal and extracts defects of the specimen by comparing the converted digital signal with a reference digital signal. A display unit displays information of defects extracted by the signal processor.

Method and apparatus for analyzing the state of generation of foreign particles in semiconductor fabrication process

A method for inspecting a specimen includes obtaining an image of a specimen through a first optical system, displaying the obtained image of the specimen on a display screen; dividing the displayed image of the specimen into plural regions and setting defect detection sensitivity for each of the plural divided regions, transferring the specimen from the first optical system to a second optical system, obtaining an image of the specimen through the second optical system, detecting defects on the specimen by processing the image obtained through the second optical system using the defect detection sensitivity set for a respective region, and displaying information of the detected defects on the display screen.

Method for inspecting defects and an apparatus of the same

A defect inspection method includes radiating an illumination slit-shaped beam having lights substantially parallel to a longitudinal direction to a substrate having circuit patterns in a direction inclined at a predetermined gradient relative to the direction of a line normal to the substrate and inclined at a predetermined gradient on a surface with respect to a group of main straight lines of the circuit patterns with its longitudinal direction oriented almost perpendicularly to a direction of a movement of the substrate. Scattered light reflected by a defect such as a foreign particle existing on the illuminated substrate is received and converted into a detection signal by using an image sensor, and defect judging is effected of an extracted a signal indicating a defect such as a foreign particle on the basis of the detection signal output.

A processing method for semiconductor devices in a semiconductor fabrication line includes processing a substrate in a first processing apparatus, transferring the substrate processed in the first processing apparatus to a detecting apparatus without removal of the substrate from the semiconductor fabrication line while continuing fabrication of the semiconductor devices, detecting foreign particle defects on the substrate transferred to the detecting apparatus, and determining a foreign particle generation condition of the processing apparatus based on a data from the detecting.

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Tokyo, Japan

Yukio Kembo