Mitsubishi Electric Corporation

Yukimasa Hayashida

Ryutaro Date

Ryo Tsuda

Daisuke Oya

Junichi Nakashima

Goro Yasutomi

Shigeru Hasegawa

Yasushi Nakayama

Yasuhiro Sakai

Yoshiko Tamada

Masuo Koga

Kenji Hatori

Hitoshi Uemura

Shinichi Iura

Kazuhiro Morishita

Takayuki Matsumoto

Tetsuo Motomiya

Tetsuo Mizoshiri

Isao Umezaki

Hiroki Shiota

Shota Morisaki

Tetsu Negishi

Yasuto Kawaguchi

Shoko Araki

An object of the present invention is to provide a power semiconductor device enabling a downsizing of a module. A power semiconductor device according to the present invention includes: emitter main electrodes each provided in each of a plurality of semiconductor chips; and main electrode emitter sense terminals directly connected to each of the emitter main electrodes and partially exposed outside a module, wherein each of the main electrode emitter sense terminals is located diagonally to each other, and a distance from each of the main electrode emitter sense terminals to each of the emitter main electrodes connected to each of the main electrode emitter sense terminals is smaller than a distance between the main electrode emitter sense terminals in a plan view outside the module.

Power semiconductor device

A semiconductor chip () is connected to a metal pattern (). A shear drop surface () of an electrode () is bonded to the metal pattern (). A burr () is formed at an end portion of the burr surface () of the electrode (). A crushing amount of the end portion of the burr surface () is equal to or less than 10 μm.

Methods for manufacturing a semiconductor device

A semiconductor device includes a first electrode; a second electrode; a resin case surrounding the first electrode and the second electrode; and a resin insulating part made of a material the same as a material of the resin case and covering part of the first electrode and part of the second electrode inside the resin case. The resin insulating part contacts an inner wall of the resin case or is separated from the inner wall of the resin case. A move positioned between the first electrode and the second electrode is formed at the resin insulating part, and thus a space in which the resin insulating part does not exist or a material different from the resin insulating part is provided between the first electrode and the second electrode.

Semiconductor device including a groove within a resin insulating part positioned between and covering parts of a first electrode and a second electrode

An object is to provide a technique capable of enhancing electrical characteristics and reliability of a semiconductor device. The semiconductor device includes a plurality of semiconductor chips, a plurality of electrodes each being electrically connected to each of the plurality of semiconductor chips, a sealing member, and a joint part. The sealing member covers the plurality of semiconductor chips, and parts being connected to the plurality of semiconductor chips, of the plurality of electrodes. The joint part is disposed outside the sealing member to electrically connect parts which are not covered by the sealing member, of the plurality of electrodes.

Semiconductor device

An object is to provide a technique capable of fixing a cover to a container body without using a dedicated fixation mechanism and fixation member. A semiconductor device includes: a container body having a space with an opening; a semiconductor element disposed in the space in the container body; a sealing member disposed in the space in the container body to cover the semiconductor element; and a cover covering the opening of the container body, wherein a convex portion protruding into the space is provided on the cover, and the cover is fixed to the container body only by embedding at least a tip portion of the convex portion in the sealing member which has been cured.

Semiconductor device and method of manufacturing semiconductor device, power conversion device, and moving body

Gates of a plurality of semiconductor switching elements are electrically connected to a common gate control pattern by gate wires. Sources of the plurality of semiconductor switching elements are electrically connected to a common source control pattern by source wires. The gate control pattern is disposed to interpose the source control pattern between the gate control pattern and each of the plurality of semiconductor switching elements that are connected in parallel and that operate in parallel. Hence, each of the gate wires becomes longer than each of the source wires, and has an inductance larger than the source wire. Accordingly, gate oscillation is reduced or suppressed in the plurality of semiconductor switching elements that are connected in parallel and that operate in parallel.

Semiconductor module and power conversion device

A semiconductor module includes: an insulating substrate; a metal pattern provided on the insulating substrate; a solder resist provided on the metal pattern; a semiconductor chip mounted on the metal pattern at an opening portion of the solder resist; and a sealing material sealing the metal pattern, the solder resist and the semiconductor chip, wherein a suction area surrounded by a groove is provided in a portion of the solder resist.

Semiconductor module

First and second circuit patterns () are provided on an insulating substrate (). First and second semiconductor chips () are provided on the first circuit pattern (). A relay circuit pattern () is provided between the first semiconductor chip () and the second semiconductor chip () on the insulating substrate (). A wire () is continuously connected to the first semiconductor chip (), the relay circuit pattern (), the second semiconductor chip () and the second circuit pattern () which are sequentially arranged in one direction.

A wiring board () is provided on a heat radiation plate (). A semiconductor chip () is provided on the wiring board (). A case housing () is provided on the heat radiation plate () and surrounds the wiring board () and the semiconductor chip (). Adhesive agent () bonds a lower surface of the case housing () and an upper surface peripheral portion of the heat radiation plate (). A sealing material () is filled in the case housing () and covers the wiring board () and the semiconductor chip (). A step portion () is provided to at least one of the lower surface of the case housing () and the upper surface peripheral portion of the heat radiation plate (). A side surface of the heat radiation plate () and an outer side surface of the case housing () are flush with each other.

A radiation plate structure includes a radiation plate, and a solder resist disposed on a main surface of the radiation plate and having at least one opening. The solder resist is made of any of polyimide (PI), polyamide (PA), polypropylene (PP), polyphenylene sulfide (PPS), a resin containing particulate ceramic (e.g., aluminum nitride (AlN), silicon nitride (SiN), or aluminum oxide (AlO)), and a high-melting-point insulator made of, for instance, glass.

Radiation plate structure, semiconductor device, and method for manufacturing radiation plate structure

An object of the present invention to provide a technique which can put flexibility into positions, positional relationships, and sizes of constituent elements. A power semiconductor device includes: a substrate on which a semiconductor chip is disposed; an electrode which has one end fixed to the substrate and stands upright on the substrate; and an insulating case which houses the electrode and has a part opposed to the other end of the electrode. The power semiconductor device includes a conductive nut which is inserted into the case in the part of the case and a conductive component which electrically connects the other end of the electrode and the nut.

It is an object of the present invention to provide a semiconductor device which allows an increase in the number of semiconductor elements mounted in parallel and prevents a shape of an insulating substrate onto which the semiconductor elements are mounted, from being laterally long, and provide a semiconductor module including such semiconductor device. A semiconductor device according to the present invention includes an insulating substrate, a metal pattern which is a continuous piece and is bonded to one main surface of the insulating substrate, and a plurality of switching elements which are bonded to a surface opposite to the insulating substrate on the metal pattern, and the plurality of switching elements are arranged in a matrix of two or more rows and two or more columns on the metal pattern.

Semiconductor device and semiconductor module provided with same

A base plate, and a plurality of unit structures formed on the base plate are provided. Each of the unit structures including an insulating substrate fixed on the base plate, a metal pattern formed on the insulating substrate, a semiconductor element electrically connected to the metal pattern, and a main electrode having an upper end portion exposed to the outside and a lower end portion connected to a peripheral portion of the metal pattern closest to an outer edge of the base plate.

A power semiconductor module includes: a positive arm and a negative arm that are formed by series connection of self-arc-extinguishing type semiconductor elements and that are connected at a connection point between the self-arc-extinguishing type semiconductor elements; a positive-side DC electrode, a negative-side DC electrode, and an AC electrode that are connected to the positive arm and the negative arm; and a substrate on which a wiring pattern is formed, the wiring pattern connecting the self-arc-extinguishing type semiconductor elements of the positive arm and the negative arm to the positive-side DC electrode, the negative-side DC electrode and the AC electrode. The positive-side DC electrode, the negative-side DC electrode, and the AC electrode are insulated from one another and arranged such that one of the electrodes faces each of the other two electrodes.

Growing community of inventors

Fukuoka, Japan

Yukimasa Hayashida