Kokusai Electric Corporation

Yuki Yamakado

Masanori Nakayama

Yasutoshi Tsubota

Tatsushi Ueda

Katsunori Funaki

Hiroto Igawa

Yuichiro Takeshima

Eiko Takami

Keita Ichimura

There is provided a technique that includes: preparing the substrate including a silicon-containing film and a metal film composed of a metal element, which includes at least one selected from the group of tungsten, titanium, ruthenium, and molybdenum and, which are formed on a surface of the substrate; and simultaneously performing modifying the metal film and modifying the silicon-containing film by supplying reactive species, which are generated by plasma-exciting a processing gas containing hydrogen and oxygen, to the substrate.

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device includes accommodating a substrate in a process chamber; supplying a first gas containing oxygen into the process chamber; generating plasma in the process chamber by exciting the first gas; supplying a second gas containing hydrogen into the process chamber and adjusting a hydrogen concentration distribution in the process chamber according to a density distribution of the plasma in the process chamber; and processing the substrate with oxidizing species generated by the plasma.

According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) forming a first oxide layer by modifying a surface of a substrate at a first temperature with a plasma of a first oxygen-containing gas; and (b) forming a second oxide layer thicker than the first oxide layer by heating the substrate to a second temperature higher than the first temperature and modifying the surface of the substrate, on which the first oxide layer is formed, with a plasma of a second oxygen-containing gas.

Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

There is provided a technique that includes: loading a substrate having a metal film composed of a single metal element formed on a surface of the substrate into a process chamber; generating reactive species by plasma-exciting a processing gas containing hydrogen and oxygen; and modifying the metal film by supplying the reactive species to the substrate, wherein in the act of modifying the metal film, the metal film is modified such that a crystal grain size of the metal element constituting the metal film is larger than that before performing the act of modifying the metal film.

There is provided a technique that includes: (a) loading a substrate including a base and a first film containing silicon and formed on the base into a process container; (b) converting a modifying gas containing helium into plasma to generate reactive species of helium; and (c) supplying the modifying gas containing the reactive species of helium to a surface of the substrate to respectively modify the first film and an interface layer of the base constituting an interface with the first film.

Growing community of inventors

Toyama, Japan

Yuki Yamakado