Dai Nippon Printing Co., Ltd.

Dai Nippon Prinitng Co., Ltd.

Yuki Aritsuka

Hiroshi Fujita

Naoko Nakata

Tsuyoshi Chiba

Morihisa Hoga

Hirokazu Oda

Hisatake Sano

Akira Yoshida

Takamasa Takano

Masaaki Kurihara

Hiroshi Nozue

Kenichi Morimoto

Masaya Tanaka

Yoshinori Kinase

Yukio Iimura

Yusuke Kawano

Hiroyuki Naganuma

Shuji Sagara

Miyuki Suzuki

Mikio Ishikawa

Yumi Yoshii

A wiring substrate of the present disclosure includes a substrate, a first conductive layer, a first insulating layer, and a second conductive layer. The substrate has an insulating surface. The first conductive layer is disposed on the substrate and includes a first part and a second part. The first part has a first thickness. The second part has a second thickness thinner than the first thickness and is adjacent to the first part. The first insulating layer is disposed on the first part and apart from the second part. The first insulating layer is disposed between the second conducting layer and the first part.

Wiring substrate and semiconductor device

The same digital data is recorded with highly integrated manner on a plurality of media able to durably hold information over long-term. A minute graphic pattern indicating data bit information is drawn on a resist layer formed on a quartz glass substrate by exposing a beam and developed so as to prepare a master medium (M), which comprises the quartz glass substrate having a minute recess and protrusion structure formed by etching where the remaining resist are used as a mask (FIG. (a)). The recess and protrusion structure recorded on the master medium (M) is shaped and transferred onto a flexible recording medium (G) on which a UV curable resin layer () is formed, whereby an intermediate medium (M) is prepared (FIGS. (b)-(d)). The inverted recess and protrusion structure transferred to the intermediate medium (M) is shaped and transferred onto a recording medium (G) comprising a quartz glass substrate () on which a UV curable resin layer () is formed, whereby a reproduction medium (M) having the same recess and protrusion structure as that of the master medium (M) is prepared (FIGS. (e)-(h)). In shaping and transferring process, the media are separated using the flexibility of the intermediate medium (M).

Method for manufacturing information recording medium

A data storage medium includes a convexoconcave structure formed in a storage area which is set on a first surface of a quartz glass substrate. The storage area includes a plurality of unit storage areas which are arrayed at least in one direction, and non-data storage areas which are disposed between the unit storage areas, which are adjacent to each other. The convexoconcave structure includes unit data patterns, address patterns and boundary patterns. The unit data patterns are formed in the plurality of unit storage areas respectively in the array sequence of the unit storage areas, and the address patterns are formed in the non-data storage areas so as to correspond to each of the unit storage areas in which the unit data patterns are formed respectively.

Data storage medium and manufacturing method thereof, data storage medium, data read out apparatus and data read out method

An imprint method includes, in the peeling step of peeling a mold off the material layer to be transferred, a region-of-contact recognition operation of recognizing and determining a region of contact of the mold with the material layer to be transferred, a center-of-gravity locating operation of determining a center of gravity of a morphology of the thus recognized region of contact on the basis of that morphology, and a peeling operation of determining a point of force for applying peeling force to the mold or the imprinting substrate in relation to the center of gravity determined by the center-of-gravity locating operation, thereby acting the peeling force on the point of force.

Imprint method, and imprint apparatus for implementing the same

A method of manufacturing a PDMS sheet that ensures good adhesion, handleability and stability to metal thin films or metal patterns of any desired shape. Given a low-molecular-weight siloxane of a cyclic structure represented by [&#x2014;Si(CH)O&#x2014;]where k is an integer of 3 to 20 inclusive, the polydimethylsiloxane sheet has a structure where the content of the low-molecular-weight siloxane at the pattern-formation surface is more than that of the low-molecular-weight siloxane at the base surface, and a spacing between the adjacent metal patterns is variable by deformation of the polydimethylsiloxane sheet.

Polydimethylsiloxane sheet, optical element incorporating the same, and manufacturing method thereof

A PDMS sheet that ensures good adhesion, handleability and stability to metal thin films or metal patterns of any desired shape, an optical element that is kept against de-bonding or exfoliation of metal patterns and has high reliability as well as good handleability and stability, and manufacturing methods thereof. The inventive optical element comprises a polydimethyl-siloxane sheet having a pattern-formation surface defined by one surface and a base surface defined by another surface, and a plurality of metal patterns positioned on the pattern-formation surface. Given a low-molecular-weight siloxane of a cyclic structure represented by [&#x2014;Si(CH)O&#x2014;]where k is an integer of 3 to 20 inclusive, polydimethylsiloxane sheet comprises a structure where the content of the low-molecular-weight siloxane at the pattern-formation surface is more than that of the low-molecular-weight siloxane at the base surface, and a spacing between the adjacent metal patterns is variable by deformation of the polydimethylsiloxane sheet.

A method for producing a fine convex pattern structure having a fine convex pattern projecting from a flat portion in a predetermined direction with respect to the flat portion includes: using an imprint mold that has a fine concave pattern corresponding to the fine convex pattern and forming the fine convex pattern projecting from the flat portion under a condition in which the fine convex pattern is inclined to the flat portion side from the predetermined direction; and causing the fine convex pattern to project in the predetermined direction with respect to the flat portion by inducing electric charges at least on the inclined fine convex pattern.

Method for producing fine convex pattern structure and fine convex pattern production system

The object of the invention is to provide a mold that is capable of high-precision, stable patterning, and improved in terms of handleability as well, and a manufacturing method thereof. The mold of the invention has a pattern-formation surface defined by one surface, wherein the pattern-formation layer has a projection-and-depression structure area for patterning, and a base surface defined by another surface. At least the pattern-formation layer and the base surface each comprise a polydimethylsiloxane layer. Given a low-molecular-weight siloxane of a cyclic structure represented by [&#x2014;Si(CH)O&#x2014;]where k is an integer of 3 to 20 inclusive, the polydimethylsiloxane layer positioned on the pattern-formation layer comprises a high-content polydimethylsiloxane layer containing the low-molecular-weight siloxane in a larger amount, and the polydimethylsiloxane layer positioned on the base surface comprises a low-content polydimethylsiloxane layer containing the low-molecular-weight siloxane in a smaller amount.

Mold and manufacturing method thereof

A pattern-formation process including: providing a substrate material having on a major surface a difficult-to-access recess formed by a 1st mask; depositing a 2nd mask having a higher etching resistance than the 1st mask by physical evaporation on the upper surface of the 1st mask and peripherally on a side of the recess, the second mask forming a series of films; and etching the substrate material via the 1st and 2nd mask, wherein forming the 2nd mask includes depositing the 2nd mask material by physical evaporation vertically onto the major surface of the substrate material; and the recess is sized such that, upon deposition, the 2nd mask material cannot substantially reach the bottom of the recess. Accordingly, portions of the recesses formed by the etching masks can be processed by etching even when those recesses are 25 nm or less, and especially 20 nm or less in size.

Pattern forming method

A system for measuring a shape, includes an external storage unit storing tolerances of first and second shape factors defining a design shape of a measuring object; a first measuring tool measuring the first shape factor of the measuring object to obtain measurement data; and a measurement processing unit determining a shape of the measuring object. The measurement processing unit includes; a comparison module comparing the measurement data of the first shape factor with the tolerance of the first shape factor; a verification module composing a predicted shape using the measurement data and verifying whether the predicted shape is formed as a figure; a calculation module calculating predicted data of the second shape factor from the predicted shape; and a determination module determining a measurement shape by comparing the predicted data with the tolerance of the second shape factor.

System for measuring a shape, method for measuring a shape, and computer program product

An imprint mold including a substrate of transparent material having a first principal surface having a pattern region and a second principal surface; a first light shielding film provided on the first principal surface, along a periphery of the pattern region; and a second light shielding film provided on the second principal surface, having an opening including an opposite region to the pattern region, a part of the second light shielding film opposite to the first light shielding film. In a cross section perpendicular to the substrate, the maximum incident angle of the light for curing a transfer layer to the second principal surface is less than an angle between a perpendicular line of the second principal surface and a line connecting an end of the second light shielding film on a side of the opening and a farthest end of the first light shielding film from the pattern region.

Imprint mold

It is an object of the present invention to effectively manufacture a charged-particle beam lithography mask, an X-ray lithography mask, or an extreme ultraviolet beam lithography mask by using, for example, an existing writer such as an electron beam writer for photomasks, while achieving improvement in processing accuracy of a mask pattern. A lithography mask () comprises a substrate () which has a lower surface provided substantially at the center thereof with an opening () and a self-supporting membrane (m) having a pattern region () substantially at the center of an upper surface of the substrate () corresponding to the opening (). The self-supporting membrane (m) is provided with through-holes (h) of a mask pattern in it or an absorber or scatterer of a mask pattern on it, and the pattern region () and a peripheral region around the pattern region () are in one plane.

Transfer mask blank, transfer mask, and transfer method using the transfer mask

The present invention relates to an SOI substrate as a mask substrate for the charged particle beam exposure of which a silicon oxidized film has a suitable thickness for the fabrication of a mask, a silicon membrane layer has a suitable thickness as a mask membrane and is a low stress membrane having no defects and excellent uniformity and relates to its forming method. The SOI substrate is an SOI wafer which is obtained by forming an oxidized film on a first silicon wafer, forming a separation layer by hydrogen ion implantation into the first silicon wafer via the oxidized film, bonding the first silicon wafer onto a second silicon wafer, and cleaving the first silicon wafer from the second silicon wafer at the separation layer so that a silicon membrane layer is formed on the second silicon layer via the oxidized film. The method of forming the SOI wafer is characterized by comprising a step of causing epitaxial growth of silicon to form a silicon membrane layer on said silicon membrane layer simultaneously with doping either or both of boron and phosphorus.

Growing community of inventors

Tokyo, Japan

Yuki Aritsuka