Fujitsu Corporation

Yuka Hayami

Masanori Kobayashi

Takashi Saiki

Junji Oh

Ken Yamazaki

Shuzo Fujimura

Haruhisa Mori

Masataka Kase

Ryou Nakamura

Miki T Suzuki

Hiroki Ogawa

Yoshiko Okui

Katsuaki Okoshi

The semiconductor device comprises a silicon wafer, a multilayer interconnectionburied in inter-layer insulation film formed on the upper surface of the silicon wafer, and a silicon nitride filmwhich is formed on the back surface of the silicon waferand is an insulation film having a tensile stress, relaxing a stress exerted to the silicon waferby the inter-layer insulation films in which the multilayer interconnectionis buried.

Semiconductor device and method for fabricating the same

There is provided a method of manufacturing semiconductor device comprising removing an organic substance from a semiconductor surface having an oxide film thereon, the semiconductor surface being formed to have a line width of 50 nm or less; removing the oxide film from the semiconductor surface; drying the semiconductor surface without using an organic solvent; and forming a silicide layer on the semiconductor surface after drying the semiconductor surface.

Method of manufacturing a silicide layer

The semiconductor device fabrication method comprises the step of forming electrodesin a first element regionand in a second element region; the step of forming a first resist filmwhich is opened in the first element region; the step of forming a first dopant diffused regionwith the first resist filmand the gate electrodeas a mask; the first ashing processing step of ashing the first resist film; the step of forming a sidewall insulation filmover the side wall of the gate electrode; the step of forming a second resist filmwhich is opened in the first element region; the forming a second dopant diffused regionwith the second resist film, the gate electrodeand the sidewall insulation filmas a mask; and the second ashing processing step for ashing the second resist film. The ashing processing period of time in the first ashing processing step is shorter than the ashing processing period of time in the second ashing processing step.

Semiconductor device fabrication method

A plate-shaped article is immersed in a cleaning liquid filling a cleaning bath having an overflowing surface through which the cleaning liquid flows out, and is rinsed out. In the cleaning bath, streams mostly being directed away from a predetermined plane approximately perpendicular to the overflowing surface are formed. The plate-shaped article is then brought into the cleaning liquid having the stream maintaining a state where the plate-shaped article intersects the predetermined plane and the surfaces of the plate-shaped article are in approximately parallel to the streams mostly being directed away from the predetermined plane on the surface of the cleaning liquid.

Method for rinsing plate-shaped articles and cleaning bath and cleaning

Semiconductor substrates are immersed in pure water having a lowered dissolved-oxygen concentration and heated to a temperature above 60.degree. C., in an atmosphere which keeps the dissolved oxygen concentration in pure water, in order to etch oxide films on surfaces of the semiconductor substrates for cleaning the surfaces of the semiconductor substrates. According to the present invention, contaminants and residual chemicals can be effectively removed without adding any chemical treating step. The cleaning can be effective without increasing the number of chemicals, and improved throughputs of the cleaning step can be obtained.

Semiconductor substrate cleaning method and semiconductor device

Method for rinsing plate-shaped articles

Growing community of inventors

Kawasaki, Japan

Yuka Hayami