Tokyo Electron Limited

Yuji Tsukamoto

Eric J Strang

Andrej Mitrovic

Thomas Hamelin

Richard Parsons

Murray D Sirkis

Bill H Quon

Yasuhisa Kudo

H Steven Tomozawa

Sam Yong Kim

A substrate holder for supporting a substrate in a processing system includes a temperature controlled support base having a first temperature, a substrate support opposing the temperature controlled support base and configured to support the substrate, and one or more heating elements coupled to the substrate support and configured to heat the substrate support to a second temperature above the first temperature. An erosion resistant thermal insulator disposed between the temperature controlled support base and the substrate support, wherein the erosion resistant thermal insulator includes a material composition configured to resist halogen-containing gas corrosion.

Temperature controlled substrate holder having erosion resistant insulating layer for a substrate processing system

A substrate holder for supporting a substrate in a processing system includes a temperature controlled support base having a first temperature, and a substrate support opposing the temperature controlled support base and configured to support the substrate. Also included is one or more heating elements coupled to the substrate support and configured to heat the substrate support to a second temperature above the first temperature, and a thermal insulator disposed between the temperature controlled support base and the substrate support. The thermal insulator includes a non-uniform spatial variation of the heat transfer coefficient (W/m-K) through the thermal insulator between the temperature controlled support base and the substrate support.

Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system

A post-etch treatment system is described for removing photoresist and etch residue formed during an etching process. For example, the etch residue can include halogen containing material. The post-etch treatment system comprises a vacuum chamber, a radical generation system coupled to the vacuum chamber, a radical gas distribution system coupled to the radical generation system and configured to distribute reactive radicals above a substrate, and a high temperature pedestal coupled to the vacuum chamber and configured to support the substrate. The high temperature pedestal comprises a scored upper surface configured to minimize substrate slippage.

Post-etch treatment system for removing residue on a substrate

A post-etch treatment system is described for removing photoresist and etch residue formed during an etching process. For example, the etch residue can include halogen containing material. The post-etch treatment system comprises a vacuum chamber, a remote radical generation system coupled to the vacuum chamber, a radical gas distribution system coupled to the radical generation system and configured to distribute reactive radicals above a substrate, and a high temperature pedestal coupled to the vacuum chamber and configured to support the substrate. The gas distribution system is configured to efficiently transport radicals to the substrate and distribute the radicals above the substrate.

Gas distribution system for a post-etch treatment system

A method of changing the temperature of a substrate during processing of the substrate includes providing the substrate on a substrate holder, the substrate holder including a temperature controlled substrate support for supporting the substrate, a temperature controlled base support for supporting the substrate support and a thermal insulator interposed between the temperature controlled substrate support and the temperature controlled base support. The method further includes setting the temperature of the base support to a first base temperature corresponding to a first processing temperature of said substrate, setting the substrate support to a first support temperature corresponding to said first processing temperature of said substrate, setting the temperature of the base support to a second base temperature corresponding to a second processing temperature of said substrate, and setting the substrate support to a second support temperature corresponding to said second processing temperature of said substrate.

Method for multi-step temperature control of a substrate

A method of changing the temperature of a substrate during processing of the substrate includes providing the substrate on a substrate holder, the substrate holder including a temperature controlled substrate support for supporting the substrate, a temperature controlled base support for supporting the substrate support and a thermal insulator interposed between the temperature controlled substrate support and the temperature controlled base support. The method further includes setting the temperature of the base support to a first base temperature corresponding to a first processing temperature of the substrate, setting the substrate support to a first support temperature corresponding to the first processing temperature of the substrate, setting the temperature of the base support to a second base temperature corresponding to a second processing temperature of the substrate, and setting the substrate support to a second support temperature corresponding to the second processing temperature of the substrate.

A substrate holder for supporting a substrate in a processing system and controlling the temperature thereof is described. The substrate holder comprises a first heating element positioned in a first region for elevating the temperature of the first region. A second heating element positioned in a second region is configured to elevate the temperature in the second region. Furthermore, a first controllably insulating element is positioned below the first heating element, and is configured to control the transfer of heat between the substrate and at least one cooling element positioned therebelow in the first region. A second controllably insulating element is positioned below the second heating element and is configured to control the transfer of heat between the substrate and at least one cooling element positioned therebelow in the second region.

Method and system for temperature control of a substrate

A method and apparatus for generating and controlling a plasma () formed in a capacitively coupled plasma system () having a plasma electrode () and a bias electrode in the form of a workpiece support member (), wherein the plasma electrode is unitary and has multiple regions (R) defined by a plurality of RF power feed lines () and the RF power delivered thereto. The electrode regions may also be defined as electrode segments () separated by insulators (). A set of process parameters A={n, &#x3c4;, &#x3a6;, P, S; L} is defined; wherein n is the number of RF feed lines connected to the electrode upper surface at locations L, &#x3c4;is the on-time of the RF power for the iRF feed line, &#x3a6;is the phase of the iRF feed line relative to a select one of the other RF feed lines, Pis the RF power delivered to the electrode through the iRF feed line at location L, and S is the sequencing of RF power to the electrode through the RF feed lines. One or more of these parameters are adjusted so that operation of the plasma system results in a workpiece () being processed with a desired amount or degree of process uniformity.

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Wilmington, MA, United States of America

Yuji Tsukamoto