Sanyo Electric Co., Ltd.

Yuji Tsukada

Takuya Suzuki

Shuichi Kikuchi

Shinya Mori

Yumiko Akaishi

Yuichi Watanabe

Nobuyuki Takai

Tatsuya Fujishima

Izuo Iida

Mikio Fukuda

Keiji Ogata

The invention provides a semiconductor device with a bonding pad made of a wiring layer including aluminum and its manufacturing method that enhance the yield of the semiconductor device. The method of manufacturing the semiconductor device of the invention includes removing a portion of an antireflection layer (e.g. made of a titanium alloy) formed on an uppermost second wiring layer (e.g. made of aluminum) on a semiconductor substrate by etching, forming a passivation layer covering the antireflection layer and a portion of the second wiring layer where the antireflection layer is not formed and having an opening exposing the other portion of the second wiring layer, and dividing the semiconductor substrate into a plurality of semiconductor dice by dicing. These processes can prevent the antireflection layer from being exposed in the opening, and this can prevent a component of the second wiring layer from being eluted due to cell reaction between the second wiring layer and the antireflection layer as has been seen in the conventional art.

Semiconductor device with passivation layer covering wiring layer

The invention is to prevent dielectric breakdown of a capacitor in a semiconductor device having the capacitor and a MOS transistor formed on a same semiconductor substrate. A SiOfilm that is to be a gate insulation film of a high voltage MOS transistor is formed on a whole surface of a P-type semiconductor substrate. A photoresist layer is selectively formed in a high voltage MOS transistor formation region and on a part of a SiOfilm covering edges of trench isolation films adjacent to a capacitor formation region, and the SiOfilm is removed by etching using this photoresist layer as a mask. Since the photoresist layer functions as a mask in this etching, the edges of the trench isolation films adjacent to the capacitor are not cut too deep. The SiOfilm remaining in this etching and a SiOfilm to be formed thereafter form a capacitor insulation film.

Method of manufacturing semiconductor device with capacitor and transistor

Semiconductor device and method of manufacturing the same

Growing community of inventors

Gunma, Japan

Yuji Tsukada