Tokyo Electron Limited

Yuji Seshimo

Hitoshi Kato

Toru Ishii

Yuichiro Sase

Yoshihiro Takezawa

Kazuyoshi Matsuzaki

Ayuta Suzuki

Koji Sasaki

Taiki Kato

Kosuke Yamamoto

Susumu Takada

Hisashi Higuchi

Katsuyuki Higashi

A gas management method includes: heating a raw material container that accommodates a raw material, by a heater, thereby generating a vaporized raw material gas; supplying the vaporized raw material gas together with a carrier gas to a processing container that accommodates a substrate, thereby performing a processing on the substrate; and controlling the heater based on a weight of the substrate after the processing on the substrate.

Gas management method and substrate processing system

A method for depositing a silicon oxide film is provided. In the method, a silicon oxide film is deposited on a substrate by Atomic Layer Deposition with plasma while heating the substrate to a first temperature of 600° C. or higher. The silicon oxide film is annealed at a second temperature higher than the first temperature after completing the depositing the silicon oxide film.

Method for depositing film and film deposition system

A film deposition apparatus includes a rotary table disposed in a vacuum chamber; multiple stages on each of which a substrate is placeable, the stages being arranged along a circumferential direction of the rotary table; a process area configured to supply a process gas toward an upper surface of the rotary table; a heat treatment area that is disposed apart from the process area in the circumferential direction of the rotary table and configured to heat-treat the substrate at a temperature higher than a temperature used in the process area; and a cooling area that is disposed apart from the heat treatment area in the circumferential direction of the rotary table and configured to cool the substrate.

Film deposition apparatus and film deposition method

A method of manufacturing a semiconductor device having a metal oxide film with workpiece accommodated in a chamber, includes: supplying a precursor gas containing a metal complex into the chamber to form a precursor layer on the workpiece from the precursor gas; supplying an oxidizing gas into the chamber to oxidize the precursor layer so that a metal oxide layer is formed, the oxidizing gas being a gas containing HO or a gas having a functional group containing hydrogen atoms in the metal complex and containing an oxidant to generate HO by reaction with the functional group; supplying an HO removal gas containing alcohols or amines into the chamber to remove HO adsorbed onto the metal oxide layer; and executing a plurality of cycles each including the supplying a precursor gas and the supplying an oxidizing gas. At least some of the cycles includes the supplying an HO removal gas.

Method of manufacturing semiconductor device and method of forming metal oxide film

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Oshu, Japan

Yuji Seshimo