Tokyo Electron Limited

Yuji Asakawa

Shuji Akiyama

Masaru Suzuki

Nobuhiro Takahashi

Tadashi Obikane

Hiroyuki Takahashi

Satoshi Toda

Kazumi Yamagata

Kazuya Yano

Yasuhito Yamamoto

Fumito Kagami

Hiroyuki Ogawa

Atsushi Tanaka

Shinji Kojima

Yohei Midorikawa

Eiichi Matsuzawa

Kazuhiro Ozawa

Shigeki Nakamura

A cylindrical inner wall used in a substrate processing apparatus and surrounding a stage on which a substrate is placed, with a gap between the inner wall and an outer periphery of the stage. The inner wall includes a plurality of slits formed in a lower end of the inner wall, and a plurality of grooves formed in the inner surface of the inner wall to extend from an upper end to the lower end of the inner wall so as to communicate with the slits.

Inner wall and substrate processing apparatus

A substrate etching apparatus for etching a substrate, the substrate etching apparatus includes a treatment container configured to accommodate a substrate, a stage on which the substrate is placed, the stage being disposed in the treatment container, a gas supply configured to supply a treatment gas from an upper space above the stage toward the stage, and a gas exhauster configured to evacuate an interior of the treatment container. The gas supply includes a central region facing a central part of the stage and an outer peripheral region having a same central axis as the central region and configured to surround the central region. The gas supply is capable of supplying the treatment gas to each of the central region and the outer peripheral region.

Apparatus and method for etching substrate

A substrate processing apparatus performs a predetermined process on a substrate by using a processing gas under a vacuum atmosphere. The substrate processing apparatus includes a chamber configured to accommodate the substrate and to be kept in the vacuum atmosphere; a substrate mounting table configured to mount the substrate thereon in the chamber; a gas introduction member configured to introduce a gas including the processing gas in the chamber; a partition wall member provided to be movable up and down in the chamber and configured to form a partition wall that defines a processing space in a region including the substrate above the substrate mounting table; and an elevating mechanism configured to move the partition wall member up and down.

Substrate processing apparatus and substrate processing method

A prove apparatus includes a first and a second loading port for mounting therein two carriers facing each other, a wafer transfer mechanism having a rotation center between the loading ports, and a first and a second inspection unit being symmetrical to each other and disposed in accordance with the arrangement of the loading ports. In this configuration, wafers are directly transferred between the carrier and a wafer chuck of the inspection unit by the wafer transfer mechanism. The wafer transfer mechanism has three arms for unloading two wafers from the carrier. The prove apparatus has a compact size and achieves a high throughput.

Each inspection units of a probe apparatus is provided with an imaging unit to take an image of a wafer

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Nirasaki, Japan

Yuji Asakawa