Tokyo Electron Limited

Yuichiro Sase

Hitoshi Kato

Toru Ishii

Yuji Seshimo

Hiroyuki Kikuchi

Izumi Sato

Kiichi Takahashi

Yu Wamura

Satoshi Asari

Katsuya Toba

Yuji Sawada

Kiyohiko Takahashi

Izumi Satoh

A deposition apparatus including: a processing chamber; a rotary table provided in the processing chamber; a first processing region provided at a predetermined position in a circumferential direction of the rotary table; a second processing region provided downstream of the first processing region in the circumferential direction of the rotary table; a third processing region provided downstream of the second processing region in the circumferential direction of the rotary table; a first heater provided above the rotary table in the second processing region; and a plasma generator. The plasma generator includes: a protrusion having a longitudinally elongated shape in a planar view extending along a radius of the rotary table in a portion of an upper surface of the processing chamber, and protruding upward from the upper surface; and a coil wound along a side surface of the protrusion and has a longitudinally elongated shape in a planar view.

Deposition method and deposition apparatus

A method for depositing a silicon oxide film is provided. In the method, a silicon oxide film is deposited on a substrate by Atomic Layer Deposition with plasma while heating the substrate to a first temperature of 600° C. or higher. The silicon oxide film is annealed at a second temperature higher than the first temperature after completing the depositing the silicon oxide film.

Method for depositing film and film deposition system

A film deposition apparatus includes a rotary table disposed in a vacuum chamber; multiple stages on each of which a substrate is placeable, the stages being arranged along a circumferential direction of the rotary table; a process area configured to supply a process gas toward an upper surface of the rotary table; a heat treatment area that is disposed apart from the process area in the circumferential direction of the rotary table and configured to heat-treat the substrate at a temperature higher than a temperature used in the process area; and a cooling area that is disposed apart from the heat treatment area in the circumferential direction of the rotary table and configured to cool the substrate.

Film deposition apparatus and film deposition method

A vertical thermal processing apparatus including: a substrate supporter; a transfer mechanism to transfer substrates between the substrate supporter and a container; and a thermal processing furnace to process substrates that have been loaded thereinto with the substrate supporter. The substrate supporter includes: support columns located at intervals therebetween to surround the substrates, supporting parts for substrate and supporting parts for annular plate provided at the support columns in a tier-like manner, for alternately supporting peripheral parts of the substrates and of annular plates at predetermined intervals therebetween, and annular plates to be supported by the supporting parts for annular plate, when seen from a direction in which the substrates are transferred. Each of the annular plates has an intermediate part having a thickness smaller than thicknesses of the peripheral parts thereof to be supported by the support columns.

Vertical thermal processing apparatus and substrate supporter

Disclosed is a heat treatment apparatus which includes a processing vessel having a furnace throat at its bottom and adapted to accommodate process objects therein to perform a heat treatment to the process objects under reduced pressure, the processing vessel having a vessel main body made of quartz, a metallic lid adapted to support thereon a holder for holding a plurality of process objects so as to load and unload the holder into and from the processing vessel and to close and open the furnace throat, and an annular sealing member disposed on the lid to seal a gap between the lid and the furnace throat. A contact-preventing member is disposed between the lid and the furnace throat to prevent contact of the lid with the furnace throat due to squashing of the sealing member that would otherwise occur when an internal pressure of the processing vessel is reduced.

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Oshu, Japan

Yuichiro Sase