Mitsubishi Heavy Industries Limited

Yuichi Kawano

Ryuichi Matsuda

Tadashi Shimazu

Masahiko Inoue

Toshihiko Nishimori

Kazuto Yoshida

Provided are a plasma processing apparatus and a plasma processing method wherein particles generated due to the inner potential of an inner cylinder disposed inside of a vacuum container are reduced. The plasma processing apparatus has, inside of a metal vacuum chamber (), the inner cylinder () composed of a surface-alumited aluminum, disposes a substrate in a plasma diffusion region, and performs plasma processing. A plurality of protruding portions () in point-contact with the vacuum chamber () are provided on the lower end portion of the inner cylinder (), the alumite film () on the leading end portion () of each of the protruding portion () is removed, and the inner cylinder and the vacuum chamber () are electrically connected to each other.

Plasma processing apparatus and plasma processing method

A seasoning method for a film-forming apparatus configured to form a silicon nitride film on a substrate placed in a process chamber. The method is conducted for reducing particles in the apparatus. The method comprises executing the plasma cleaning of the process chamber to remove a film deposited on the inner wall thereof (step S), subsequently depositing an amorphous silicon film (step S), depositing thereon a silicon nitride film in which the nitrogen content gradually increases in the thickness direction (step S), and keeping the inside of the process chamber being filled with a rare-gas plasma until film formation on the substrate is initiated (step S).

Seasoning method for film-forming apparatus

Provided are a plasma treatment method and a plasma treatment device capable of forming a silicon nitride film having high compressive stress. In the plasma treatment method for depositing the silicon nitride film on a process target substrate by use of plasma of raw material gas containing silicon and hydrogen and of nitrogen gas, ion energy for disconnecting nitrogen-hydrogen bonding representing a state of bonding between the hydrogen in the raw material gas and the nitrogen gas is applied to the process target substrate so as to reduce an amount of nitrogen-hydrogen bonding contained in the silicon nitride film.

Plasma treatment method and plasma treatment device

The present invention attracts a wafer, placed on a susceptor, toward the susceptorby the electrostatic attractive power of an electrostatic chuck electrode, varies the output voltage of a variable direct current power sourcefor the electrostatic chuck electrodewhile measuring the temperature of the waferby a temperature detection sensor; and detects the potential of the waferbased on the output voltage of the variable direct current power sourceat a time when the temperature of the waferpeaks.

Growing community of inventors

Takasago, Japan

Yuichi Kawano