Shanghai Huali Microelectronics Corporation

Yueyu Zhang

Yue H Wang

Meng Kang

The present invention discloses an OPC method for a pattern corner, comprising the following steps of: S: providing a photomask which has an original layout containing target patterns, wherein the target patterns have at least one convex corner at a vertex of two first adjacent sides with an angle of 90-degree therebetween and at least one concave corner at a vertex of two second adjacent sides with an angle of 270-degree; S: modifying the original layout to obtain a modified layout by adding at least one first rectangular correction pattern from outside of the convex corner and/or removing at least one second rectangular correction pattern from inside of the concave corner; S: performing a model-based OPC correction to the modified layout to obtain a corrected photomask.

OPC method for a pattern corner

The present invention discloses an OPC method for a shallow ion implanting layer, comprising the following steps of: selecting a valid device region in an implanting active region in a shallow ion implanting original layout; selecting a region in the valid device region which is contacted with a poly-silicon pattern in a poly-silicon layer, as a poly-silicon contacting region; extending the length and width of the poly-silicon contacting region and the non poly-silicon contacting region, to form a new poly-silicon contacting region and a new non poly-silicon contacting region; combining a gap portion which an interval between any two new poly-silicon contacting regions and/or new non poly-silicon contacting regions after extending is smaller than or equal to G and completely fallen in the STI region, with the poly-silicon contacting regions and non poly-silicon contacting regions after extending, to form a correction target layer; performing a model-based OPC routine on the correction target layer, to obtain a mask layer.

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Shanghai, China

Yueyu Zhang