Asml Netherlands B.v.

Yue Ma

Andrew David LaForge

Igor Vladimirovich Fomenkov

Klaus Martin Hummler

Alexander Igorevich Ershov

Chunguang Xia

Dzmitry Labetski

Marc Guy Langlois

Christianus Wilhelmus Johannes Berendsen

Henricus Gerardus Tegenbosch

Kornelis Frits Feenstra

John Tom Stewart

Kerim Nadir

Arun Johnkadaksham

Alexander Shatalov

Seyedmohammad Mojab

Maksim Loginov

Matthias Kraushaar

Rui Miguel Duarte Rodrigues Nunes

Martinus Hendrikus Antonius Leenders

Johannes Henricus Wilhelmus Jacobs

Johannes Hubertus Josephina Moors

Jan Steven Christiaan Westerlaken

Fei Liu

Jonghoon Baek

Antonius Theodorus Wilhelmus Kempen

David Robert Evans

John Tom Stewart, Iv

William Peter Van Drent

Alexey Sergeevich Kuznetsov

Peter Gerardus Jonkers

Hendrikus Alphonsus Ludovicus Van Dijck

Hubertus Johannes Van De Wiel

Jeroen Hubert Rommers

Parham Yaghoobi

Alexander Downn Kim

Deniz Van Heijnsbergen

Fernando Brizuela

Rob Carlo Wieggers

Umesh Prasad Gomes

Elena Nedanovska

Qiushi Zhu

Celal Korkmaz

Marcus Adrianus Van De Kerkhof

Nina Vladimirovna Dziomkina

Daniel John William Brown

Jeremy Burke

Jeremy A Burke

Rui Miguel Duarte Rodriges Nunes

Taylor John Hartung

Esteban Joseph Sandoval Johnson

Rui Miguel Duarte Rodreigues Nunes

Kay Hoffmann

Peter Matthew Mayer

An extreme ultraviolet radiation (EUV) source, including: a vessel having an inner vessel wall and an intermediate focus (IF) region; an EUV collector disposed inside the vessel, the EUV collector including a reflective surface configured to reflect EUV radiation toward the intermediate focus region, the reflective surface configured to directionally face the IF region of the vessel; a showerhead disposed along at least a portion of the inner vessel wall, the showerhead including a plurality of nozzles configured to introduce gas into the vessel; and one or more exhausts configured to remove gas introduced into the vessel, the one or more exhausts being oriented along at least a portion of the inner vessel wall so that the gas is caused to flow away from the EUV collector.

Guiding device and associated system

Provided is an optical element for a lithographic apparatus. The optical element includes a capping layer that includes oxygen vacancies therein. The oxygen vacancies prevent attack of the capping layer by preventing hydrogen and other species from penetrating the capping layer and underlying layers. The capping layer provides a low hydrogen recombination rate enabling hydrogen to clean the surface of the optical element. The capping layer may include an alloyed metal, a mixed metal oxide or a doped metal oxide and it may be a ruthenium capping layer that includes one or more dopants therein.

Oxygen-loss resistant top coating for optical elements

In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.

Cleaning a structure surface in an EUV chamber

Disclosed is a source for and method of generating extreme ultraviolet radiation in which spitting of molten target material is hindered through depletion of the number of hydrogen radicals available to enter deposits of molten target material and create hydrogen bubbles therein by introducing an active gas that reacts with the hydrogen radicals.

Apparatus for and method of reducing contamination from source material in an EUV light source

Degradation of the reflectivity of one or more reflective optical elements in a system for generating EUV radiation is reduced by the controlled introduction of a gas into a vacuum chamber containing the optical element. The gas may be added to the flow of another gas such as hydrogen or alternated with the introduction of hydrogen radicals.

Prolonging optical element lifetime in an EUV lithography system

Systems, apparatuses, and methods are provided for a collector flow ring (CFR) housing configured to mitigate an accumulation of fuel debris in an extreme ultraviolet (EUV) radiation system. An example CFR housing can include a plurality of showerhead flow channel outlets configured to output a plurality of first gaseous fluid flows over a plurality of portions of a plasma-facing surface of the CFR housing. The example CFR housing can further include a gutter purge flow channel outlet configured to output a second gaseous fluid flow over a fuel debris-receiving surface of the CFR housing. The example CFR housing can further include a shroud mounting structure configured to support a shroud assembly, a cooling flow channel configured to transport a fluid, and a plurality of optical metrology ports configured to receive a plurality of optical metrology tubes.

Collector flow ring

Degradation of the reflectivity of one or more reflective optical elements in a system (SO) for generating EUV radiation is reduced by the controlled introduction of a gas into a vacuum chamber () containing the optical element. The gas may be added to the flow of another gas such as hydrogen or alternated with the introduction of hydrogen radicals.

Growing community of inventors

Escondido, CA, United States of America

Yue Ma