Mentor Graphics Corporation

Siemens Industry Software Gmbh

Yuansheng Ma

Junjiang Lei

Le Hong

Yuri Granik

Juan Andres Torres Robles

Joydeep Mitra

Krasnova Polina Andreevna

Rui Wu

Various aspects of the present disclosed technology relate to techniques for inverse-lithography-technology-based optical proximity correction. A layout design is received. A machine learning-based clustering process is then performed to separate layout features in the layout design into groups of layout features. For layout features in each of the groups of layout features, preliminary corrections are determined. The determination may be based on inverse lithography technology. The preliminary corrections are applied to the layout design to generate a pre-processed layout design. An inverse lithography technology process is performed on the pre-processed layout design to generate a processed layout design. Masks can be manufactured based on the processed layout design.

Optical proximity correction based on combining inverse lithography technology with pattern classification

Aspects of the disclosed technology relate to techniques of generating guiding patterns for via-type features. An initial guiding pattern characterized by a plurality of guiding pattern parameters is constructed for two or more via-type features in a layout design based on target values of location and size parameters for the two or more via-type features. Predicted values of the location and size parameters are then extracted from the initial guiding pattern based on simulations or correlation information between the plurality of guiding pattern parameters and the location and size parameters. Based on the predicted values of the location and size parameters, the target values of location and size parameters and the correlation information, a modified guiding pattern is determined by adjusting one or more parameters of the plurality of guiding pattern parameters. The extraction and determination operations may be iterated.

Guiding patterns optimization for directed self-assembly

Aspects of the disclosed technology relate to techniques of optical proximity correction for directed self-assembly guiding patterns. An initial mask pattern for photomask fabrication is first generated by performing a plurality of conventional optical proximity correction iterations. Predicted print errors for two or more via-type features are then determined based on a predicted guiding pattern for the two or more via-type features, a target guiding pattern for the two or more via-type features, and correlation information between a plurality of guiding pattern parameters and location and size parameters for the two or more via-type features. Here the predicted guiding pattern is derived based on the initial mask pattern. Based on the predicted print errors and the correlation information, the initial mask pattern is adjusted to generate a new mask pattern.

Optical proximity correction for directed-self-assembly guiding patterns

Aspects of the disclosed technology relate to techniques of generating guiding patterns for via-type feature groups. A guiding pattern is constructed based on seeding positions for a via-type feature group. The initial seeding positions are derived from targeted locations of via-type features in the via-type feature group. A potential energy function is then determined for the guiding pattern. Based on the potential energy function, simulated locations of the via-type features are computed. The seeding positions are compared with the targeted locations and may be adjusted based on differences between the simulated locations and the targeted locations. The above operations may be repeated until one of one or more termination conditions are met.

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Fremont, CA, United States of America

Yuansheng Ma