Nan Ya Technology Corporation

Yuan-Hsun Wu

Wen-Bin Wu

Yung-Long Hung

Yi-Nan Chen

Shian-Jyh Lin

Chung-Yuan Lee

Chiang-Lin Shih

Pei-Ing Paul Lee

Hui-Min Mao

Teng-Yen Huang

Chun-Cheng Liao

Ya-Chih Wang

An-Hsiung Liu

Lin-Chin Su

Kuo-Kuei Fu

Yu-Sheng Shu

Ya Chih Wang

Yung Long Hung

Hsien-Jung Wang

Chia-Tsung Hung

A phase-shift mask for forming a pattern includes a glass substrate and a pattern, a first phase-shift region, a second phase-shift region and a third phase-shift region on the glass substrate. The first phase-shift region and the second phase-shift region are alternately arranged and the third phase-shift regions are formed at the terminal ends of the first phase-shift region.

Phase-shift mask and method for forming a pattern

A phase-shifting mask suited for equal line/space, small pitched, dense line pattern is disclosed. The phase-shifting mask includes a transparent substrate, a partially shielded mesa line pattern of first phase formed on the substrate, and a clear recessed line pattern of second phase etched into the substrate and is disposed right next to the partially shielded mesa line pattern. The partially shielded mesa line pattern has a plurality of alternating 5%-10% transmittance light-shielding regions and clear regions of the first phase. The partially shielded mesa line pattern and the clear recessed line pattern have the same line width. The light that passes through the clear regions of the first phase and the light that passes through the clear recessed line pattern of second phase have a phase difference of 180 degree.

Chromeless phase-shifting mask for equal line/space dense line patterns

A phase-shifting mask suited for equal line/space, small pitched, dense line pattern is disclosed. The phase-shifting mask includes a transparent substrate, a partially shielded mesa line pattern of first phase formed on the substrate, and a 100% clear recessed line pattern of second phase etched into the substrate and is disposed right next to the partially shielded mesa line pattern. The partially shielded mesa line pattern has a plurality of alternating 45-degree, oblique areas and 100% transmittance clear regions of the first phase. The partially shielded mesa line pattern and the clear recessed line pattern have the same line width. The light that passes through the clear regions of the first phase and the light that passes through the clear recessed line pattern of second phase have a phase difference of 180 degree.

Phase-shifting mask for equal line/space dense line patterns

A small-size (w&#x3c;0.5 micrometers) alignment mark in combination with a 'k1 process' is proposed, which is particularly suited for the fabrication of trench-capacitor DRAM devices which requires highly accurate AA-DT alignment. The 'k1 process' is utilized to etch away polysilicon studded in the alignment mark trenches and refresh the trench profile prior to AA pattern transferring, thereby improving wafer alignment accuracy and precision.

Alignment mark and alignment method for the fabrication of trench-capacitor dram devices

A method of forming a vertical memory device with a rectangular trench. First, a substrate covered by a photoresist layer is provided. Next, the photoresist layer is defined by a mask to form a rectangular opening, wherein the mask has two rectangular transparent patterns arranged with a predetermined interval. Next, the substrate is etched using the defined photoresist layer as a mask to form a single rectangular trench and the photoresist layer is then removed. Finally, a trench capacitor and a vertical transistor are successively formed in the rectangular trench to finish the vertical memory device.

Method of forming a vertical memory device with a rectangular trench

An H-shaped test key layout for exclusively monitoring 3-foil lens aberration effects during the fabrication of deep-trench capacitor memory devices is disclosed. The COMA lens aberration effect that used to occur along with the 3-foil lens aberration effect is now eliminated by this test key layout.

Test ket layout for precisely monitoring 3-foil lens aberration effects

A photolithography method for reducing effects of lens aberration. A photolithography apparatus is provided with a first reticle therein, having at least one first rectangular pattern thereon, a first photolithography is performed on a wafer by the photolithography apparatus to transfer the first rectangular pattern thereonto by simultaneously moving the first reticle and the wafer in a direction parallel to the short sides of the first rectangular pattern. The first reticle is replaced with a second reticle having at least one second rectangular pattern thereon and a second photolithography is performed by the photolithography apparatus to transfer the second rectangular pattern onto the wafer by simultaneously moving the second reticle and the wafer in a 90&#xb0; plus or minus rotation in a direction parallel to the short sides of the second rectangular pattern.

Photolithography method for reducing effects of lens aberration

An aperture plate for lithography systems capable of improving NILS. The aperture plate includes a light-intercepting region and a light-transmitting region. The light-intercepting region has a reference center point. A horizontal reference line and a vertical reference line are defined on the light-intercepting region and intersect the reference center point. The light-transmitting region includes four pole apertures defining a central area. Two of the pole apertures are positioned on the horizontal reference line, and the other pole apertures are positioned on the vertical reference line. The light-transmitting region further includes at least a symmetric pattern aperture positioned in the central area, wherein the symmetric pattern aperture has a symmetric center overlapping the reference center point.

Aperture plate for lithography systems

A method of forming a patterned photoresist layer. First, an anti-reflection coating layer is formed on a substrate. Next, a first bake is performed. A photoresist layer is then formed on the anti-reflection coating layer. Exposure is performed. A second bake is performed, wherein the temperature difference between the first bake and the second bake is about 35 &#xb0; C.&#x2dc;55 &#xb0; C. Finally, development is performed. The patterned photoresist layer features have perfect profiles in accordance with this invention.

Method of forming patterned photoresist layer

A method for optimizing NILS of exposed lines includes providing a photomask layout which has a first straight line and a second straight line parallel with the first straight line and is applied to a Quasar 90 illumination, and adding a first assist pattern between the first and second straight lines, wherein the first assist pattern has a plurality of geometric patterns with similar size arranging as a line parallel with the first straight line.

Method for optimizing NILS of exposed lines

A method of preventing repeated collapse in a reworked photoresist layer. First, oxygen-containing plasma is applied to remove a collapsed photoresist. Because the plasma containing oxygen reacts with a bottom anti-reflect layer comprising SiON, some acids are produced on the bottom anti-reflect layer, resulting in undercutting in a subsequently reworked photoresist. Next, an alkaline solution treatment is performed on the anti-reflect layer after the collapsed photoresist layer is removed. Finally, the reworked photoresist with is formed on the anti-reflect layer, without undercutting.

Method of preventing repeated collapse in a reworked photoresist layer

A best focus determining method. First, a test mask is provided, wherein the test mask comprises a transparent substrate and an opaque layer covering parts of the transparent substrate to define a first transparent area with 0&#xb0; phase and a second transparent area with 90&#xb0; phase. The sizes of the two transparent areas are the same. Next, a light source is provided and transmits the test mask to perform an exposure. Then, a first image corresponding to the first transparent area and a second image corresponding to the second transparent area are formed. The sizes of the first and second images are measured to ensure the best focus possible.

Best focus determining method

A mask for defining a guard ring pattern. The mask includes a transparent substrate, a light-shielding layer, and at least one pair of assisted line patterns. The light-shielding layer is disposed on the transparent substrate and has a rectangular ring pattern composed of a plurality of opening patterns to define the guard ring pattern. The pair of assisted line patterns is parallelized by a predetermined interval on both sides of at least one section of the rectangular ring and have a predetermined width. Moreover, a method for defining a guard ring pattern is disclosed. First, a semiconductor substrate covered by an energy sensitive layer is provided. Next, photolithography is performed on the energy sensitive layer using the mask to transfer the guard ring pattern inside.

Mask and method for defining a guard ring pattern

The present invention provides a method for estimating repair accuracy of a mask shop. The method comprises the steps of providing a mask having a light-shielding layer with a pattern of a plurality of lines, each of which has a defect, using the mask shop to repair the defects. Contaminated areas are formed in the vicinity of areas where the defects are repaired, measuring first light intensities of the contaminated areas, and second and third light intensities of two sides of the contaminated areas, and calculating ratios of means of the second and third light intensities to the first light intensities to estimate the repair accuracy.

Method for estimating repair accuracy of a mask shop

A mask and method for contact hole exposure. First, a mask including a transparent substrate, a phase shift layer installed on the transparent substrate to define a series of patterns having contact hole areas set in array, an a plurality of metal lines installed on the phase shift layer between the adjacent contact hole areas is provided. Then, an exposure is performed by transmitting a light source, such as deep ultraviolet (UV), extreme ultraviolet, or X-ray, through the mask after the metal lines absorb high degree diffraction waves.

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Jungli, Taiwan

Yuan-Hsun Wu