United Microelectronics Corp.

Yuan-Cheng Yang

Chin-Fu Lin

Chih-Chung Wang

Sheng-Chen Chung

Ping-Chia Shih

Chiu-Te Lee

Chun-Hung Cheng

Yau-Kae Sheu

Chun-Sung Huang

Chen-An Kuo

Yu-Chieh Lin

Liang-An Huang

Chung-Che Huang

Yu-Chun Huang

Chun-Lin Chen

Hsin-Liang Liu

Yu-Cheng Wang

Yu-Ciao Lin

Yi-Han Su

A gate oxide forming process includes the following steps. A substrate including a first area and a second area is provided. A first oxide layer, a silicon containing cap layer and a second oxide layer on the substrate of the first area and the second area are sequentially and blanketly formed. The silicon containing cap layer and the second oxide layer in the first area are removed. An oxidation process is performed to oxidize the silicon containing cap layer and a gate oxide layer is formed in the second area.

Gate oxide forming process

A fabricating method of a shallow trench isolation structure includes the following steps. Firstly, a substrate is provided, wherein a high voltage device area is defined in the substrate. Then, a first etching process is performed to partially remove the substrate, thereby forming a preliminary shallow trench in the high voltage device area. Then, a second etching process is performed to further remove the substrate corresponding to the preliminary shallow trench, thereby forming a first shallow trench in the high voltage device area. Afterwards, a dielectric material is filled in the first shallow trench, thereby forming a first shallow trench isolation structure.

Fabricating method of shallow trench isolation structure

An exemplary method of etching an oxide layer and a nitride layer is provided. In particular, a substrate is provided. A surface of the substrate has an isolating structure projecting therefrom. A first oxide layer, a nitride layer and a second oxide layer are sequentially provided on the surface of the substrate, wherein the first oxide layer is uncovered on the isolating structure, the nitride layer is formed overlying the first oxide layer, and the second oxide layer is formed overlying the nitride layer. An isotropic etching process is performed by using an etching mask unmasking the isolating structure, and thereby removing the unmasked portion of the second oxide layer and the unmasked portion of the nitride layer and further exposing sidewalls of the isolating structure. The unmasked portion of the first oxide layer generally is partially removed due to over-etching.

Method of etching oxide layer and nitride layer

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Kaohsiung, Taiwan

Yuan-Cheng Yang