Advanced Semiconductor Engineering, Inc.

Yuan-Chang Su

Shih-Fu Huang

Kuang-Hsiung Chen

Bernd Karl Appelt

Chia-Cheng Chen

Chih-Cheng Lee

You-Lung Yen

Ming-Chiang Lee

Pao-Ming Hsieh

Chun-Che Lee

Tzu-Hui Chen

Ming Chiang Lee

Chia-Hsiung Hsieh

Cheng-Lin Ho

Tien-Szu Chen

Chih Cheng Lee

Ta-Chun Lee

Chien-Hao Wang

Yi-Chuan Ding

William T Chen

Guo-Cheng Liao

Yu-Lin Shih

Kay Stephan Essig

Wen-Chi Cheng

Calvin Cheung

A semiconductor substrate and a manufacturing method thereof are provided. The semiconductor substrate includes a dielectric layer, a circuit layer, a first protection layer and a plurality of conductive posts. The dielectric layer has a first surface and a second surface that are opposite to each other. The circuit layer is embedded in the dielectric layer and is exposed from the first surface. The first protection layer covers a portion of the first circuit layer and defines a plurality of holes that expose a remaining portion of the first circuit layer. The conductive posts are formed in the holes.

Semiconductor substrate and method for manufacturing the same

A substrate for packaging a semiconductor device is disclosed. The substrate includes a first dielectric layer having a first surface and a second surface opposite to the first surface, a first patterned conductive layer adjacent to the first surface of the first dielectric layer, and a second patterned conductive layer adjacent to the second surface of the first dielectric layer. The first dielectric layer includes a first portion adjacent to the first surface, a second portion adjacent to the second surface, and a reinforcement structure between the first portion and the second portion. A thickness of the first portion of the first dielectric layer is different from a thickness of the second portion of the first dielectric layer.

Semiconductor device package and a method of manufacturing the same

A substrate for packaging a semiconductor device includes a first dielectric layer having a first surface and a second surface opposite to the first surface, a first patterned conductive layer adjacent to the first surface of the first dielectric layer, and a second patterned conductive layer adjacent to the second surface of the first dielectric layer and electrically connected to the first patterned conductive layer. The first patterned conductive layer includes a first portion and a second portion. Each of the first portion and the second portion is embedded in the first dielectric layer and protrudes relative to the first surface of the first dielectric layer toward a direction away from the second surface of the first dielectric layer. A thickness of the first portion of the first patterned conductive layer is greater than a thickness of the second portion of the first patterned conductive layer.

Substrate for packaging a semiconductor device package and a method of manufacturing the same

Semiconductor substrate mitigating bridging

An interposer substrate includes a first circuit pattern embedded at a first surface of a dielectric layer and a second circuit pattern embedded at a second surface of the dielectric layer; a middle patterned conductive layer in the dielectric layer between the first circuit pattern and the second circuit pattern; first conductive vias, where each first conductive via includes a first end adjacent to the first circuit pattern and a second end adjacent to the middle patterned conductive layer, wherein a width of the first end is greater than a width of the second end; second conductive vias, where each second conductive via including a third end adjacent to the second circuit pattern and a fourth end adjacent to the middle patterned conductive layer, wherein a width of the third end is greater than a width of the fourth end.

Double side via last method for double embedded patterned substrate

A substrate includes a first dielectric structure, a first circuit layer, a second dielectric structure and a second circuit layer. The first circuit layer is embedded in the first dielectric structure, and does not protrude from a first surface of the first dielectric structure. The second dielectric structure is disposed on the first surface of the first dielectric structure. The second circuit layer is embedded in the second dielectric structure, and is electrically connected to the first circuit layer. A first surface of the second circuit layer is substantially coplanar with a first surface of the second dielectric structure, and a surface roughness value of a first surface of the first circuit layer is different from a surface roughness value of the first surface of the second circuit layer.

Substrate, semiconductor package structure and manufacturing process

Disclosed is a semiconductor package structure and manufacturing method. The semiconductor package structure includes a first dielectric layer, a second dielectric layer, a component, a patterned conductive layer and at least two conductive vias. The first dielectric layer has a first surface and a second surface opposite the first surface. The second dielectric layer has a first surface and a second surface opposite the first surface. The second surface of the first dielectric layer is attached to the first surface of the second dielectric layer. A component within the second dielectric layer has at least two electrical contacts adjacent to the second surface of the first dielectric layer. The patterned conductive layer within the first dielectric layer is adjacent to the first surface of the first dielectric layer. The conductive vias penetrate the first dielectric layer and electrically connect the electrical contacts with the patterned conductive layer.

Semiconductor package structure and semiconductor process

The present disclosure relates to a semiconductor package and method of making the same. The semiconductor package includes an encapsulation layer, a component within the encapsulation layer, a first dielectric layer, a second dielectric layer, a first patterned conductive layer, and a second patterned conductive layer. The component includes pads on a front surface of the component. The first dielectric layer is disposed on a surface of the encapsulation layer. The second dielectric layer is disposed on a surface of the first dielectric layer. The first and second dielectric layers define via holes extending from the second dielectric layer to respective ones of the pads. The first patterned conductive layer is disposed within the first dielectric layer and surrounds the via holes. The second patterned conductive layer is disposed within the second dielectric layer and surrounds the via holes.

Semiconductor package including dielectric layers defining via holes extending to component pads

A package carrier includes: (1) a dielectric layer; (2) a first electrically conductive pattern, embedded in the dielectric layer and disposed adjacent to a first surface of the dielectric layer, and including a plurality of first pads; (3) a plurality of first electrically conductive posts, extending through the dielectric layer, wherein each of the first electrically conductive posts includes a first electrically conductive post segment connected to at least one of the first pads and a second electrically conductive post segment connected to the first electrically conductive post segment, and a lateral extent of the first electrically conductive post segment is different from a lateral extent of the second electrically conductive post segment; and (4) a second electrically conductive pattern, disposed adjacent to a second surface of the dielectric layer, and including a plurality of second pads connected to respective ones of the second electrically conductive post segments.

Package carrier, semiconductor package, and process for fabricating same

An embedded component device includes an electronic component including an electrical contact, an upper patterned conductive layer, a dielectric layer between the upper patterned conductive layer and the electronic component, a first electrical interconnect, a lower patterned conductive layer, a conductive via, and a second electrical interconnect. The dielectric layer has a first opening exposing the electrical contact, and a second opening extending from the lower patterned conductive layer to the upper patterned conductive layer. The first electrical interconnect extends from the electrical contact to the upper patterned conductive layer, and fills the first opening. The second opening has an upper portion exposing the upper patterned conductive layer and a lower portion exposing the lower patterned conductive layer. The conductive via is located at the lower portion of the second opening. The second electrical interconnect fills the upper portion of the second opening.

Embedded component device and manufacturing methods thereof

A multilayer substrate includes a first outer conductive patterned layer, a first insulating layer exposing a portion of the first outer conductive patterned layer to define a first set of pads, a second outer conductive patterned layer, and a second insulating layer exposing a portion of the second outer conductive patterned layer to define a second set of pads. The multilayer substrate further includes inner layers each with an inner conductive patterned layer, multiple inner conductive posts formed adjacent to the inner conductive patterned layer, and an inner dielectric layer, where the inner conductive patterned layer and the inner conductive posts are embedded in the inner dielectric layer, and a top surface of each of the inner conductive posts is exposed from the inner dielectric layer.

Semiconductor package with single sided substrate design and manufacturing methods thereof

A package carrier includes: (a) a dielectric layer defining a plurality of openings; (b) a patterned electrically conductive layer, embedded in the dielectric layer and disposed adjacent to a first surface of the dielectric layer; (c) a plurality of electrically conductive posts, disposed in respective ones of the openings, wherein the openings extend between a second surface of the dielectric layer to the patterned electrically conductive layer, the electrically conductive posts are connected to the patterned electrically conductive layer, and an end of each of the electrically conductive posts has a curved profile and is faced away from the patterned electrically conductive layer; and (d) a patterned solder resist layer, disposed adjacent to the first surface of the dielectric layer and exposing portions of the patterned electrically conductive layer corresponding to contact pads. A semiconductor package includes the package carrier, a chip, and an encapsulant covering the chip and the package carrier.

Semiconductor package and process for fabricating same

The present disclosure relates to a semiconductor substrate and a method for making the same. The semiconductor substrate includes an insulation layer, a first circuit layer, a second circuit layer, a plurality of conductive vias and a plurality of bumps. The first circuit layer is embedded in a first surface of the insulation layer, and exposed from the first surface of the insulation layer. The second circuit layer is located on a second surface of the insulation layer and electrically connected to the first circuit layer through the conductive vias. The bumps are directly located on part of the first circuit layer, where the lattice of the bumps is the same as that of the first circuit layer.

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Kaohsiung, Taiwan

Yuan-Chang Su