United Microelectronics Corp.

Yuan-Chang Liu

Mu-Chun Wang

Tien-Hao Tang

Cheng-Hsiung Chen

Shiang Huang-Lu

Yue-Shiun Lee

Shih-Chieh Kao

A method of characterizing semiconductor device includes providing a silicon-on-insulator (SOI) substrate with at least a body-tied (BT) SOI device and a BT dummy device for measurement, respectively measuring tunneling currents (I) and scattering parameters (S-parameters) of the BT SOI device and the BT dummy device, subtracting Iof BT dummy device from that of the BT SOI device to obtain Iof a floating body (FB) SOI device, filtering characteristics of the BT dummy device out to extract S-parameters of the FB SOI device, and analyzing the S-parameters of the FB SOI device to obtain gate-related capacitances of the FB SOI device.

Method of characterizing a semiconductor device and semiconductor device

A device structure and a method of fabricating an electrostatic discharge (ESD) protection circuit on a semiconductor device. A substrate is provided. A layer of silicon oxide is formed on the substrate. A photoresist mask is formed on the layer of silicon oxide. A species of n-type ions is implanted into the surface to form source/drain regions in the ESD protection area. After removing the photoresist, a metal layer is blanket deposited over the surface. A thermal process is performed to form salicide layers on the source/drain regions. A patterned photoresist is respectively formed to cover a portion of the salicide layer. An etching process is performed to strip away the exposed portion of the salicide layer.

Electrostatic discharge protection structure and a method for forming the same

A via plug layout structure for connecting different metallic layers. The structure includes a plurality of via plugs arranged in a fan-shaped pattern and a plurality of empty bars positioned between a single via plug and the fanned-out via plugs so that incoming current to the single via plug is equally distributed to every one of the fanned-out via plug and current stress in each fanned-out via plug is identical. Hence, via plugs having particularly serious electromigration problem can be discovered. In addition, single via plug having different critical dimension can be fabricated so that maximum critical dimension sustainable by the via plug is determined after an electromigration test.

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Hsinchu, Taiwan

Yuan-Chang Liu