Taiwan Semiconductor Manufacturing Comp. Ltd.

Yu-Sheng Hsieh

Yung-Ping Chiang

Han-Ping Pu

Ming-Kai Liu

Ting-Chu Ko

Chang-Wen Huang

Chao-Wen Shih

Albert Wan

Shou-Zen Chang

Ching-Yu Huang

Chung-Shi Liu

Chen-Hua Douglas Yu

Shou Zen Chang

Sensor packages and manufacturing methods thereof are disclosed. One of the sensor packages includes a semiconductor chip and a redistribution layer structure. The semiconductor chip has a sensing surface. The redistribution layer structure is arranged to form an antenna transmitter structure aside the semiconductor chip and an antenna receiver structure over the sensing surface of the semiconductor chip.

Semiconductor packages and manufacturing methods thereof

Semiconductor packages and methods of forming the same are disclosed. An semiconductor package includes two dies, an encapsulant, a first metal line and a plurality of dummy vias. The encapsulant is disposed between the two dies. The first metal line is disposed over the two dies and the encapsulant, and electrically connected to the two dies. The plurality of dummy vias is disposed over the encapsulant and aside the first metal line.

Semiconductor packages and methods of forming the same

A memory device including a first semiconductor die and a memory cube mounted on and connected with the first semiconductor die is described. The memory cube includes multiple stacked tiers, and each tier of the multiple stacked tiers includes second semiconductor dies laterally wrapped by an encapsulant and a redistribution structure disposed on the second semiconductor dies and the encapsulant. The second semiconductor dies of the multiple stacked tiers are electrically connected with the first semiconductor die through the redistribution structures in the multiple stacked tiers. Each redistribution structure in the multiple stacked tiers includes redistribution patterns, the redistribution structure closest to the first semiconductor die further includes a thermally conductive layer connected to the first semiconductor die, wherein a material of the redistribution patterns in the multiple stacked tiers is different from a material of the thermally conductive layer of the redistribution structure closest to the first semiconductor die, and the thermally conductive layer is electrically isolated from the second semiconductor dies in the multiple stacked tiers and the first semiconductor die.

Memory device and manufacturing method thereof

Integrated fan-out packages and methods of forming the same are disclosed. An integrated fan-out package includes two dies, an encapsulant, a first metal line and a plurality of dummy vias. The encapsulant is disposed between the two dies. The first metal line is disposed over the two dies and the encapsulant, and electrically connected to the two dies. The plurality of dummy vias is disposed over the encapsulant and aside the first metal line.

Integrated fan-out packages and methods of forming the same

A semiconductor package includes a semiconductor chip and a redistribution layer structure. The redistribution layer structure is arranged to form an antenna transmitter structure and an antenna receiver structure over the semiconductor chip, wherein patterns of the antenna receiver structure are located at different levels of the redistribution layer structure, and at least one pattern of the antenna transmitter structure is at the same level of the topmost patterns of the antenna receiver structure.

Provided are a package structure and a method of manufacturing the same. The method includes the following processes. A die is provided. An encapsulant is formed laterally aside the die. A first dielectric layer is formed on the encapsulant and the die. A first redistribution layer is formed to penetrate through the first dielectric layer to connect to the die, the first redistribution layer includes a first via embedded in the first dielectric layer and a first trace on the first dielectric layer and connected to the first via. The first via and the first trace of the first redistribution layer are formed separately.

Package structure and method of manufacturing the same

A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a semiconductor die, a molding compound, a polymer layer, a conductive trace, a conductive via and an inductor. The semiconductor die is laterally surrounded by the molding compound. The polymer layer covers the semiconductor die and the molding compound. The conductive trace, the conductive via and the inductor are embedded in the polymer layer. The conductive via extends from a top surface of the conductive trace to a top surface of the polymer layer. The inductor has a body portion extending horizontally and a protruding portion protruded from the body portion. A total height of the body and protruding portions is substantially equal to a sum of a thickness of the conductive trace and a height of the conductive via. The height of the body portion is greater than the thickness of the conductive trace.

Semiconductor package and manufacturing method thereof

Provided is a package structure includes a die having a first connector, a RDL structure disposed on the die, and a second connector. The RDL structure includes at least one elongated via located on and connected to the first connector. The second connector is disposed on and connected to the RDL structure.

The present disclosure provides a semiconductor structure includes a sensing element configured to receive a signal from a sensing target, a molding surrounding the sensing element, a through via in the molding, a front side redistribution layer disposed at a front side of the sensing element and electrically connected thereto, and a back side redistribution layer disposed at a back side of the sensing element, the front side redistribution layer and the back side redistribution layer are electrically connected by the through via. The present disclosure also provides a method for manufacturing the semiconductor structure described herein.

Growing community of inventors

Taipei, Taiwan

Yu-Sheng Hsieh