Siliconware Precision Industries Co., Ltd.

Winbond Electronics Corporation

Yu-Po Wang

Chien-Ping Huang

Chih-Ming Huang

Cheng-Hsu Hsiao

Chi-Ching Ho

Yi-Min Fu

Chien Ping Huang

Chao-Chiang Pu

Han-Ping Pu

Wen-Jung Chiang

Cheng-Yu Kang

Jeng-Yuan Lai

Yu-Ching Liu

Yueh-Chiung Chang

Chia-Yin Chen

Nai-Hao Kao

Wei-Che Chang

Fu-Tang Huang

Kai Jen

Lung-Yuan Wang

Don-Son Jiang

Fang-Lin Tsai

Chiang-Cheng Chang

Cheng-Chia Chiang

Han-PIng Pu

Chien-Te Chen

Yi-Hao Chien

Chu-Chi Hsu

Chia-Kai Shih

Hsin-Ta Lin

Wen-Hao Lee

Hsiang-Po Liu

Wen Cheng Lee

Yen-Ping Wang

Yuan-Lin Tzeng

Chung-Chi Lin

Caesar Lin

Shuai-Lin Liu

Po-Yuan Su

Wei-Chun Lin

Tsung-Tien Hsieh

Sen-Yen Yang

An electronic package is provided, in which an electronic module and at least one support member are disposed on a substrate structure having a circuit layer, such that the stress on the substrate structure is dispersed through the at least one support member to eliminate the problem of stress concentration and prevent the substrate structure from warping.

Electronic package and manufacturing method thereof

Provided is an electronic package providing a circuit structure having auxiliary circuit layers. Further, an electronic component is disposed on the circuit structure and electrically connected to the auxiliary circuit layers. In addition, an encapsulant covers the electronic component, and the circuit structure is disposed on the package substrate having a plurality of main circuit layers, such that the main circuit layers are electrically connected to the auxiliary circuit layers. As such, a number of layers of the auxiliary circuit layers is used to replace a layer number configuration of the main circuit layers.

An electronic package is provided and includes an electronic structure and a plurality of conductive pillars embedded in a cladding layer, a circuit structure formed on the cladding layer, and a reinforcing member bonded to a side surface of the cladding layer, where a plurality of electronic elements are disposed on and electrically connected to the circuit structure, such that the electronic structure electrically bridges any two of the electronic elements via the circuit structure, so as to enhance the structural strength of the electronic package and avoid warpage by means of the design of the reinforcing member.

An electronic package is provided in which an electronic module and a heat dissipation structure combined with the electronic module are disposed on a carrier structure, and at least one adjustment structure is coupled with the heat dissipation structure and located around the electronic module. Therefore, the adjustment structure disperses thermal stress to avoid warpage of the electronic module.

A semiconductor structure includes a semiconductor substrate and an isolation structure disposed in the semiconductor substrate. The isolation structure includes a lining layer disposed along a boundary between the semiconductor substrate and the isolation structure, a first oxide fill layer disposed over the lining layer, a dielectric barrier structure surrounding the first oxide fill layer in a closed loop, and a second oxide fill layer disposed over the dielectric barrier structure and adjacent to the lining layer.

Semiconductor structure and method for forming the same

An electronic package is provided in which a chip packaging module, an electronic element having a plurality of contacts, and an electronic connector are disposed on a routing structure of a carrier component, so as to communicatively connect with the chip packaging module via the electronic element and the electronic connector, thereby increasing a signal transmission speed.

A semiconductor memory structure includes a semiconductor substrate including an active region and a chop region. The semiconductor memory structure also includes an isolation structure disposed in the chop region, a first gate structure extending at least through the isolation structure in the chop region, and a second gate structure extending at least through the active region. The semiconductor memory structure also includes a doped region disposed in the active region. A first distance between the doped region and the first gate structure is shorter than a second distance between the doped region and the second gate structure.

Semiconductor memory structure and method for forming the same

A semiconductor package is provided, which includes: a first semiconductor device having a first top surface and a first bottom surface opposite to the first top surface; a plurality of conductive balls formed on the first top surface of the first semiconductor device; a second semiconductor device having a second top surface and a second bottom surface opposite to the second top surface; and a plurality of conductive posts formed on the second bottom surface of the second semiconductor device and correspondingly bonded to the conductive balls for electrically connecting the first semiconductor device and the second semiconductor device, wherein the conductive posts have a height less than 300 um. Therefore, the present invention can easily control the height of the semiconductor package and is applicable to semiconductor packages having fine-pitch conductive balls.

Semiconductor package and fabrication method thereof

A packaging substrate and a semiconductor package using the packaging substrate are provided. The packaging substrate includes: a substrate body having a die attach area, a circuit layer formed around the die attach area and having a plurality of conductive traces each having a wire bonding pad, and a surface treatment layer formed on the wire bonding pads. Therein, only one of the conductive traces is connected to an electroplating line so as to prevent cross-talk that otherwise occurs between conductive traces due to too many electroplating lines in the prior art.

Fabrication method of packaging substrate

Semiconductor package, packaging substrate and fabrication method thereof

A package substrate having landless conductive traces is proposed, which includes a core layer with a plurality of plated through holes formed therein, and a plurality of conductive traces formed on at least a surface of the core layer. Each of the conductive traces has a connection end, a bond pad end, and a base body connecting the connection end and the bond pad end, the conductive trace is electrically connected to a corresponding one of the plated through holes through the connection end, and the connection end has a width greater than that of the base body but not greater than the diameter of the plated through hole, thereby increasing the contact area between the conductive trace and the plated through hole and preventing the contact surface of the conductive trace with the plated through hole from cracking.

Package substrate having landless conductive traces

The present invention discloses a flip-chip semiconductor package and a chip carrier thereof. The chip carrier includes a groove formed around a chip-mounting area. The groove may be formed along a periphery of the chip-mounting area or at corners thereof. The groove is filled with a filler of low Young's modulus so as to absorb and eliminate thermal stress, thereby preventing delamination between an underfill and a flip chip mounted on the chip-mounting area.

Flip-chip semiconductor package and chip carrier for preventing corner delamination

A stacked semiconductor structure and fabrication method thereof are provided. The method includes mounting and connecting electrically a semiconductor chip to a first substrate, mounting on the first substrate a plurality of supporting members corresponding in position to a periphery of the semiconductor chip, mounting a second substrate having a first surface partially covered with a tape and a second surface opposite to the first surface on the supporting members via the second surface, connecting electrically the first and second substrates by bonding wires, forming on the first substrate an encapsulant for encapsulating the semiconductor chip, the supporting members, the second substrate, the bonding wires, and the tape with an exposed top surface, and removing the tape to expose the first surface of the second substrate and allow an electronic component to be mounted thereon. The present invention prevents reflow-induced contamination, spares a special mold, and eliminates flash.

Method of fabricating stacked semiconductor structure

Growing community of inventors

Taichung Hsien, Taiwan

Yu-Po Wang