Taiwan Semiconductor Manufacturing Comp. Ltd.

Yu Lun Ke

Yi-Wei Chiu

Yu-Chi Lin

Hung Jui Chang

Chin-Hsing Lin

Joung-Wei Liou

Yu-Wei Kuo

Hung-Jui Chang

Methods to form low-k dielectric materials for use as intermetal dielectrics in multilevel interconnect systems, along with their chemical and physical properties, are provided. The deposition techniques described include PECVD, PEALD, and ALD processes where the precursors such as TEOS and MDEOS may provide the requisite O-atoms and Ogas may not be used as one of the reactants. The deposition techniques described further include PECVD, PEALD, and ALD processes where Ogas may be used and, along with the Ogas, precursors containing embedded Si—O—Si bonds, such as (CHO)—Si—O—Si—(CHO)) and (CH)—Si—O—Si—(CH)may be used.

Interconnect system with improved low-K dielectrics

A method of forming a semiconductor structure includes forming an etch stop layer on a substrate, forming a metal oxide layer over the etch stop layer, and forming an interlayer dielectric (ILD) layer on the metal oxide layer. The method further includes forming a trench etch opening over the ILD layer, forming a capping layer over the trench etch opening, and forming a via etch opening over the capping layer.

Etch profile control of interconnect structures

The present disclosure describes an exemplary etch process in a reactor that includes a shower head and an electrostatic chuck configured to receive a radio frequency (RF) power. The shower head includes a top plate and a bottom plate with one or more gas channels that receive incoming gases. The method can include (i) rotating the top plate or the bottom plate of the shower head to a first position to allow a gas to flow through the shower head; (ii) performing a surface modification cycle that includes: applying a negative direct current (DC) bias voltage to the shower head, applying an RF power signal to the wafer chuck; and (iii) performing an etching cycle that includes: removing the negative DC bias voltage from the shower head and lowering the RF power signal applied to the wafer chuck.

Etch process with rotatable shower head

A method includes mounting a wafer on a chuck disposed within a chamber of an etching system, the wafer being encircled by a focus ring. While etching portions of the wafer, an etch direction is adjusted to a first desired etch direction by adjusting a vertical position of the focus ring relative to the wafer to a first desired vertical position. While etching portions of the wafer, the etch direction is adjusted to a second desired etch direction by adjusting the vertical position of the focus ring relative to the wafer to a second desired vertical position. The second desired vertical position is different from the first desired vertical position. The second desired etch direction is different from the first desired etch direction.

Focus ring for plasma etcher

Methods to form low-k dielectric materials for use as intermetal dielectrics in multilevel interconnect systems, along with their chemical and physical properties, are provided. The deposition techniques described include PECVD, PEALD, and ALD processes where the precursors such as TEOS and MDEOS may provide the requisite O-atoms and Ogas may not be used as one of the reactants. The deposition techniques described further include PECVD, PEALD, and ALD processes where Ogas may be used and, along with the Ogas, precursors containing embedded Si&#x2014;O&#x2014;Si bonds, such as (CHO)&#x2014;Si&#x2014;O&#x2014;Si&#x2014;(CHO)) and (CH)&#x2014;Si&#x2014;O&#x2014;Si&#x2014;(CH)may be used.

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Hsinchu, Taiwan

Yu Lun Ke