Taiwan Semiconductor Manufacturing Comp. Ltd.

National Taiwan University

Yu-Jiun Peng

Chang-Yun Chang

Chih-Hao Yu

Hsiu-Hao Tsao

Chang-Jhih Syu

Chee-Wee Liu

Fang-Liang Lu

Chia-Che Chung

Kuo-Feng Yu

Jian-Hao Chen

Shu-Han Chen

A method includes forming an active region on a substrate, forming a sacrificial gate stack engaging the active region, measuring a gate length of the sacrificial gate stack at a height lower than a top surface of the active region, selecting an etching recipe based on the measured gate length of the sacrificial gate stack, etching the sacrificial gate stack with the etching recipe to form a gate trench, and forming a metal gate stack in the gate trench.

Gate formation of semiconductor devices

A method of controlling gate formation of a semiconductor device includes acquiring a correlation between gate critical dimensions (CDs) and etching recipes for forming gate trenches; measuring a gate CD on a target wafer; determining an etching recipe based on the correction and the measured gate CD; and performing an etching process on the target wafer to form a gate trench with the determined etching recipe.

In an embodiment, a structure includes: a semiconductor substrate; a gate spacer over the semiconductor substrate, the gate spacer having an upper portion and a lower portion, a first width of the upper portion decreasing continually in a first direction extending away from a top surface of the semiconductor substrate, a second width of the lower portion being constant along the first direction; a gate stack extending along a first sidewall of the gate spacer and the top surface of the semiconductor substrate; and an epitaxial source/drain region adjacent a second sidewall of the gate spacer.

Methods for manufacturing a transistor gate by non-directional implantation of impurities in a gate spacer

A semiconductor device includes a substrate, a channel structure and a metal gate structure. The channel structure protrudes above the substrate. The channel structure includes alternately stacked first portions and second portions having widths greater than widths of the first portions, and the first portions and the second portions are made of the same semiconductor material. The metal gate structure wraps around the channel structure.

Semiconductor device and manufacturing method thereof

A semiconductor device includes a substrate, a channel structure, and a gate structure. The channel structure is over the substrate and extends along a first direction, in which the channel structure has plurality of first portions and plurality of second portions alternately stacked, and a width of the first portions is smaller than that of the second portions in a second direction different from the first direction. The gate structure is disposed over the substrate and crossing the channel structure along the second direction, in which the gate structure is in contact with the first portions and the second portions.

Growing community of inventors

Taichung, Taiwan

Yu-Jiun Peng