Taiwan Semiconductor Manufacturing Comp. Ltd.

Industrial Technology Research Institute

National Yang Ming Chiao Tung University

Chunghwa Picture Tubes, Ltd.

Yu-Chih Huang

Hao-Yi Tsai

Chih-Hsuan Tai

Chih-Hua Chen

Chung-Shi Liu

Ting-Ting Kuo

Ying-Cheng Tseng

Chen-Hua Douglas Yu

Yu-Feng Chen

Chia-Hung Liu

Ban-Li Wu

Chi-Hui Lai

Yu-Jen Cheng

Chih-Wei Lin

Chiahung Liu

Po-Chun Lin

Chen-Shien Chen

Li-Jui Chen

Tsung-Hsien Chiang

Ching-Hua Hsieh

Shang-Chieh Chien

Hsiu-Jen Lin

Heng-Hsin Liu

Chih-Hao Chang

Yu-Huan Chen

Ming-Da Cheng

Ching-Wen Hsiao

Shih-Wei Chen

Yen-Chang Hu

Chun-Ti Lu

Ya-An Peng

Wei-Yu Chen

Tin-Hao Kuo

Chuei-Tang Wang

Po-Chung Cheng

Chun-Cheng Lin

Kuei-Wei Huang

Sheng-Yu Wu

Chi Ming Yang

Yu-Peng Tsai

Chih-Chiang Tsao

Ming-Hsun Tsai

Chia-Shen Cheng

Che-Chang Hsu

Pei-Chun Tsai

Chieh-Jen Cheng

Jen-Jui Yu

Zheng-Gang Tsai

Yu-Kai Chiou

Mirng-Ji Lii

Han-Ping Pu

Wen-Hsiung Lu

Po-Yu Yang

Kuo Lung Pan

Wei Sen Chang

Huang-Chung Cheng

Kuo-Lung Pan

Huai-An Li

Shin-Lin Shieh

Wei-Sen Chang

Shin-Chuan Chiang

Kun-Tzu Lin

Yin-Cheng Ma

Jung-Huang Peng

Wen-Shyang Tsai

Martin Weng

Jung Huang Peng

Robin Lien

Chu-Song Shih

Chen-Feng Lin

Sawyer Ho

Chia-Li Lin

Li-Yang Tseng

A package structure includes a semiconductor device, a molding compound, a first dielectric layer, and a through-via. The molding compound is in contact with a sidewall of the semiconductor device. The first dielectric layer is over the molding compound and the semiconductor device. The through-via is in the molding compound and the first dielectric layer. The through-via is a continuous element and in contact with the first dielectric layer.

Package structure

Cleaning equipment for an EUV wafer chuck or clamp, which removes particles that have accumulated between burls on the surface of the wafer chuck. The equipment includes a spinning bi-polar electrode placed in proximity to the surface, which can attract and adsorb the charged particle residue therefrom using its generated symmetric electric field when the wafer chuck is not in use.

Method and apparatus for removing contamination

A fingerprint sensor package and method are provided. Embodiments include a sensor and a sensor surface material encapsulated within the fingerprint sensor package. An array of electrodes of the sensor are electrically connected using through vias that are located either in the sensor, in connection blocks separated from the sensor, or through connection blocks, or else connected through other connections such as wire bonds. A high voltage die is attached in order to increase the sensitivity of the fingerprint sensor.

Fingerprint sensor device and method

A semiconductor package and a manufacturing method for the semiconductor package are provided. The semiconductor package includes a molded semiconductor device, a first redistribution structure, and conductive vias. The molded semiconductor device comprises a sensor die with a first surface and a second surface opposite the first surface, wherein the sensor die has an input/output region and a sensing region at the first surface. The first redistribution structure is disposed on the first surface of the sensor die, wherein the first redistribution structure covers the input/output region and exposes the sensing region, and the first redistribution structure comprises a conductive layer having a redistribution pattern and a ring structure. The redistribution pattern is electrically connected with the sensor die. The ring structure surrounds the sensing region and is separated from the redistribution pattern, wherein the ring structure is closer to the sensing region than the redistribution pattern. The conductive vias extend through the molded semiconductor device and are electrically connected with the redistribution pattern.

Semiconductor package and manufacturing method thereof

A package structure includes a thermal dissipation structure including a substrate, a first encapsulant laterally covering the substrate, a die disposed on the substrate and including a sensing region, a second encapsulant laterally covering the die, and a redistribution structure disposed on the die and the second encapsulant. An outer sidewall of the second encapsulant is laterally offset from an outer sidewall of the first encapsulant. The die is electrically coupled to the substrate through the redistribution structure, and the redistribution structure includes a hollow region overlying the sensing region of the die.

Package structure and method of forming the same

A data processing method for a DNN model includes: reading weights of transmission data; quantizing each weight into bits sequentially including first, second, third, and fourth-type bits; sequentially interleaving the first-type bit into a first bit set; sequentially interleaving each second-type bit into second bit sets and reading a second compression rate of each second bit set in response to the compressible second bit sets; interleaving the third-type bit into a third bit set and reading a third compression rate of the third bit set in response to the compressible third bit set; compressing each second bit set with the second compression rate, and compressing the third bit set with the third compression rate; sequentially coding the first bit set, each compressed second bit set, and the compressed third bit set to generate first encoded data corresponding to the transmission data; transmitting the first encoded data to an external device.

Data processing system and data processing method for deep neural network model

A package structure includes a thermal dissipation structure, a first encapsulant, a die, a through integrated fan-out via (TIV), a second encapsulant, and a redistribution layer (RDL) structure. The thermal dissipation structure includes a substrate and a first conductive pad disposed over the substrate. The first encapsulant laterally encapsulates the thermal dissipation structure. The die is disposed on the thermal dissipation structure. The TIV lands on the first conductive pad of the thermal dissipation structure and is laterally aside the die. The second encapsulant laterally encapsulates the die and the TIV. The RDL structure is disposed on the die and the second encapsulant.

In an embodiment, a device includes: a dielectric layer over an active surface of a semiconductor substrate; a conductive via in the dielectric layer, the conductive via including a first copper layer having a non-uniform grain orientation; and a bonding pad over the conductive via and in the dielectric layer, the bonding pad including a second copper layer having a uniform grain orientation, a top surface of the bonding pad being coplanar with a top surface of the dielectric layer.

Die bonding pads and methods of forming the same

A package includes a sensor die, and an encapsulating material encapsulating the sensor die therein. A top surface of the encapsulating material is substantially coplanar with or higher than a top surface of the sensor die. A plurality of sensing electrodes is higher than the sensor die and the encapsulating material. The plurality of sensing electrodes is arranged as a plurality of rows and columns, and the plurality of sensing electrodes is electrically coupled to the sensor die. A dielectric layer covers the plurality of sensing electrodes.

Fingerprint sensor in InFO structure and formation method

In an embodiment, a device includes: a sensor die having a first surface and a second surface opposite the first surface, the sensor die having an input/output region and a first sensing region at the first surface; an encapsulant at least laterally encapsulating the sensor die; a conductive via extending through the encapsulant; and a front-side redistribution structure on the first surface of the sensor die, the front-side redistribution structure being connected to the conductive via and the sensor die, the front-side redistribution structure covering the input/output region of the sensor die, the front-side redistribution structure having a first opening exposing the first sensing region of the sensor die.

Sensor packages

A target droplet source for an extreme ultraviolet (EUV) source includes a droplet generator configured to generate target droplets of a given material. The droplet generator includes a nozzle configured to supply the target droplets in a space enclosed by a chamber. In some embodiments, a nozzle tube is arranged within the nozzle of the droplet generator, and the nozzle tube includes a structured nozzle pattern configured to provide an angular momentum to the target droplets.

Apparatus and method for generating extreme ultraviolet radiation

A semiconductor package includes a lower encapsulated semiconductor device, a lower redistribution structure, an upper encapsulated semiconductor device, and an upper redistribution structure. The lower redistribution structure is disposed over and electrically connected to the lower encapsulated semiconductor device. The upper encapsulated semiconductor device is disposed over the lower encapsulated semiconductor device and includes a sensor die having a pad and a sensing region, an upper encapsulating material at least laterally encapsulating the sensor die, and an upper conductive via extending through the upper encapsulating material and connected to the lower redistribution structure. The upper redistribution structure is disposed over the upper encapsulated semiconductor device. The upper redistribution structure covers the pad of the sensor die and has an opening located on the sensing region of the sensor die.

Semiconductor package and manufacturing method of semiconductor package

A semiconductor substrate stage for carrying a substrate is provided. The semiconductor substrate stage includes a base layer, a magnetic shielding layer disposed on the base layer, a carrier layer disposed on the magnetic shielding layer, a receiver disposed on the carrier layer, a storage layer disposed between the base layer and the magnetic shielding layer, and a magnetic shielding element disposed on the carrier layer and surrounding the receiver.

Substrate stage and substrate processing system using the same

A package structure and a method of manufacturing the same are provided. The package structure includes a die, an encapsulant, a first redistribution line (RDL) structure, a second RDL structure, a conductive terminal, and a through via. The encapsulant laterally encapsulates the die. The first redistribution line (RDL) structure on a first side of the die and the encapsulant, wherein the first RDL structure comprises a dielectric layer and a redistribution layer in the dielectric layer. The second RDL structure is located on a second side of the die and the encapsulant. The conductive terminal is connected to the redistribution layer. The through via extends through the encapsulant and the redistribution layer to contact the conductive terminal and the second RDL structure.

Package structure with through via extending through redistribution layer and method of manufacturing the same

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Hsinchu, Taiwan

Yu-Chih Huang