Taiwan Semiconductor Manufacturing Comp. Ltd.

Tsinghua University

Yu-Cheng Shiau

Chih-Tang Peng

Wan-Yi Kao

Chi On Chui

Yung-Cheng Lu

Chunyao Wang

Tien-I Bao

Chung-Chi Ko

Hao-Wu Lin

Wei-Jin Li

Han-Sheng Weng

Methods for forming improved isolation features in semiconductor devices and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes etching a first trench in a substrate; depositing a first insulation layer in the first trench with a first flowable chemical vapor deposition process; depositing a second insulation layer on the first insulation layer with a second flowable chemical vapor deposition process, the second flowable chemical vapor deposition process having process parameters different from the first flowable chemical vapor deposition process, and a portion of the first trench remaining unfilled by the first insulation layer and the second insulation layer; and forming an insulating fin in the portion of the first trench unfilled by the first insulation layer and the second insulation layer.

Semiconductor device and method

A semiconductor device and method of manufacture are provided. In embodiments a first liner is deposited to line a recess between a first semiconductor fin and a second semiconductor fin, the first liner comprising a first material. The first liner is annealed to transform the first material to a second material. A second liner is deposited to line the recess, the second liner comprising a third material. The second liner is annealed to transform the third material to a fourth material.

Semiconductor device and method of manufacture

A method for forming a semiconductor structure is provided. The method includes patterning a semiconductor substrate to form a first semiconductor fin and a second semiconductor fin adjacent to the first semiconductor fin, and depositing a first dielectric material on the first semiconductor fin and the second semiconductor fin on the semiconductor substrate using an atomic layer deposition process. There is a first trench between the first semiconductor fin and the second semiconductor fin. The method also includes filling the first trench with a flowable dielectric material, and heating the flowable dielectric material and the first dielectric material to form an isolation structure between the first semiconductor fin and the second semiconductor fin.

Gap-fill method having improved gap-fill capability

Compared to traditional ITO transparent substrate showing drawbacks of high sheet resistance, poor flexibility and high manufacturing cost, the present invention mainly discloses a transparent conductive film fabricated by sequentially forming a wetting layer and an ultra-thin metal layer onto a transparent substrate, wherein the transparent conductive film includes advantages of low sheet resistance, high transmittance, great flexibility, and low manufacturing cost. Moreover, a variety of experiment data have proved that, this novel transparent conductive film can not only be applied in the fabrication of some electro-optical devices such as organic solar cell and OLED, but also helpful to the enhancement of the fundamental and essential characteristics of the electro-optical devices.

Transparent conductive film and electro-optical device having the same

Growing community of inventors

Hsinchu, Taiwan

Yu-Cheng Shiau