Mitsui Chemicals, Inc.

National Institute of Advanced Industrial Science and Technology

Yousuke Ono

Atsushi Okubo

Kazuo Kohmura

Hisako Ishikawa

Takeo Yamada

Atsuko Sekiguchi

Ryohei Ogawa

Yuichi Kato

Ying Zhou

A pellicle film for photolithography including a carbon nanotube film, in which the carbon nanotube film contains carbon nanotubes; the carbon nanotube film transmits 80% or more of EUV light at a wavelength of 13.5 nm; the carbon nanotube film has a thickness from 1 nm to 50 nm; the carbon nanotube film is deposited on a silicon substrate, in which the 3σ of the reflectance is 15% or less when the reflectance of the deposited carbon nanotube film is measured using a reflectance spectrophotometer-based film thickness meter under the following conditions: the diameter of measurement spots, 20 μm; the reference measurement wavelength, 285 nm; the number of measurement spots, 121 spots; the distance between the centers of adjacent measurement spots, 40 μm.

Pellicle film for photolithography, pellicle, photolithography mask, photolithography system, and method of producing pellicle film for photolithography

Disclosed is a pellicle including a pellicle membrane including a carbon-based membrane having a carbon content of 40% by mass or more and a support frame that supports the pellicle membrane, in which the pellicle membrane and the support frame are in contact with each other, and at least one of the following conditions 1 and 2 is satisfied. [Condition 1] In the support frame, a surface in contact with the pellicle membrane has a roughness Ra of 1.0 μm or less. [Condition 2] The support frame has a width of unevenness of 10 μm or less at an edge portion on a surface side in contact with the pellicle membrane and on an inner side of the pellicle.

Pellicle, exposure original plate, exposure apparatus, method of manufacturing pellicle, and method of manufacturing semiconductor device

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Sodegaura, Japan

Yousuke Ono