Fab Solutions, Inc.

Renesas Electronics Corporation

Topcon Corporation

Yousuke Itagaki

Keizo Yamada

Takeo Ushiki

Tohru Tsujide

Fumihiko Uesugi

Natsuko Ito

Mitsuo Yasaka

An apparatus includes a housing defining a chamber in which an electric field is generated, and an internal member provided in the chamber. At least one part of the internal member is formed of a dielectric material. A process is executed in the chamber so that a dielectric deposit is formed on the at least one part of the internal member. An m(d&#x2208;/dm) value of the dielectric material and an m(d&#x2208;/dm) value of the dielectric deposit are set so that production of particles from the deposit is properly controlled. The term mis a mass density of the dielectric material, &#x2208;is a permittivity of the dielectric material, mis a mass density of the dielectric deposit, and &#x2208;is a permittivity of the dielectric deposit.

Object-processing apparatus controlling production of particles in electric field or magnetic field

In a plasma processing apparatus having an electrostatic chuck for holding a semiconductor wafer by an electrostatic adsorption force and a DC power supply for applying an electrostatic adsorption voltage to the electrostatic chuck, abnormal discharge in plasma is suppressed by providing the apparatus with a signal detector that detects a foresee signal that foresees occurrence of abnormal discharge in plasma, and a controller that controls ESC leakage current based upon the foresee signal. If the foresee signal is outside a prescribed range, control is exercised so as to reduce the absolute value of the electrostatic adsorption voltage, thereby suppressing the occurrence of an abnormal discharge.

Plasma processing apparatus and method of suppressing abnormal discharge therein

A system and method is disclosed for obtaining information regarding one or more contact and/or via holes on a semiconductor wafer. In one embodiment, the method obtains information regarding one or more holes (for example, via or contact) that are disposed in a semiconductor wafer or disposed in a layer which is disposed on or above the semiconductor wafer. The method of this embodiment comprises irradiating the one or more holes with an electron beam; and determining information relating to a bottom diameter or a bottom circumference of the one or more holes using data which is representative of an amount of substrate current which is generated in response to irradiating the one or more holes with an electron beam.

Semiconductor device tester

A production managing system for semiconductor devices includes, in a semiconductor producing center C, production devices-for producing semiconductor devices, in-line measuring devices-for measuring data of a lot, a databasestoring data of production methods, the measured data, the specifications of the process steps corresponding to the measured data, the estimated yield, the data of lot input date and hour, the data of the scheduled date on which the process step is performed, the data of actual date of completion in every step and the data of the scheduled date of completion of the semiconductor devices of every lot, correspondingly to a lot number data of the semiconductor devices (chips) and a serverincluding an estimated yield operating unitfor calculating the estimated yield, which is a final yield, on the basis of the specifications and the measured data, and a production managing unitfor performing a production management of semiconductor devices ordered by a user on the basis of the respective data inputted by the user and the estimated yield, wherein a user terminal of the user not only performs a determination whether or not the process processing in every process is normal but also estimates the final number of normal products ordered by the user and obtainable finally.

Production managing system of semiconductor device

An apparatus for measuring the thickness of thin-film cause electron beams of first and second energies to strike thin-film to be measured that is formed on a silicon substrate, and measures the first substrate current value of current flowing in the substrate when it is struck by an electron beam of a first energy and the second substrate current value of current flowing in the substrate when it is struck by an electron beam of a second energy. The thin-film measuring apparatus obtains reference data indicating a relationship between the film thickness and a reference function having as variables the substrate current for the case of an electron beam of the first energy striking a standard sample and the substrate current for the case of an electron beam of the second energy striking the standard sample, and calculates the thickness of the thin-film under measurement based on the first and second substrate current values, giving consideration to the reference data.

Film thickness measuring apparatus and a method for measuring a thickness of a film

In one aspect, the present invention is a system and method for obtaining information regarding one or more contact holes and/or vias on a semiconductor wafer. In this regard, in one embodiment, the system comprises an electron gun to irradiate an electron beam, having a variable acceleration voltage, on the one or more contact holes and/or vias. The system further includes a current measuring device, coupled to the semiconductor wafer, may measure a compensation current, wherein the compensation current is generated in response to the electron beam irradiated at a plurality of acceleration voltages on the one or more contact holes. The system also includes a data processor, coupled to the current measuring device, to determine information relating to the one or more contact holes and/or vias using the compensation current measured for the plurality of acceleration voltages of the electron beam.

In one aspect, the present invention is a system and method for obtaining information regarding one or more contact holes and/or vias on a semiconductor wafer. In this regard, in one embodiment, the system comprises an electron gun to irradiate an electron beam on the one or more contact holes and/or vias wherein the electron beam includes a cross-section which is greater than the one or more contact holes. The system further includes a current measuring device, coupled to the semiconductor wafer, may measure a compensation current, wherein the compensation current is generated in response to the electron beam irradiated on the one or more contact holes. The system also includes a data processor, coupled to the current measuring device, to determine information relating to the one or more contact holes and/or vias using the compensation current.

A production managing system for semiconductor devices includes, in a semiconductor producing center C, production devicesfor producing semiconductor devices, in-line measuring devicesfor measuring data of a lot, a databasestoring data of production methods, the measured data, the specifications of the process steps corresponding to the measured data, the estimated yield, the data of lot input date and hour, the data of the scheduled date on which the process step is performed, the data of actual date of completion in every step and the data of the scheduled date of completion of the semiconductor devices of every lot, correspondingly to a lot number data of the semiconductor devices (chips) and a serverincluding an estimated yield operating unitfor calculating the estimated yield, which is a final yield, on the basis of the specifications and the measured data, and a production managing unitfor performing a production management of semiconductor devices ordered by a user on the basis of the respective data inputted by the user and the estimated yield, wherein a user terminal of the user not only performs a determination whether or not the process processing in every process is normal but also estimates the final number of normal products ordered by the user and obtainable finally.

The semiconductor manufacturing device according to the present invention having a mechanical drive part which is moved in a vacuum device while holding a substrate includes at least one discharge port for introducing an inert gas into the vacuum device, and a flow rate control part for controlling the inert gas which is discharged into the vacuum device from the discharge port at a constant flow rate.

Semiconductor manufacturing device

Current produced in a sample by irradiating the sample with parallel electron beam is measured by an ammeter . The measurement is repeated while changing acceleration voltage of electron beam . An information related to a structure of the sample in a depth direction thereof is obtained by a data processor , on the basis or a difference in transmittivity of electron beam into the sample due to the difference of acceleration voltage.

Semiconductor device tester which measures information related to a structure of a sample in a depth direction

A production managing system for semiconductor devices includes, in a semiconductor producing center C, production devices for producing semiconductor devices, in-line measuring devices for measuring data of a lot, a database storing data of production methods, the measured data, the specifications of the process steps corresponding to the measured data, the estimated yield, the data of lot input date and hour, the data of the scheduled date on which the process step is performed, the data of actual date of completion in every step and the data of the scheduled date of completion of the semiconductor devices of every lot, correspondingly to a lot number data of the semiconductor devices (chips) and a server including an estimated yield operating unit for calculating the estimated yield, which is a final yield, on the basis of the specifications and the measured data, and a production managing unit for performing a production management of semiconductor devices ordered by a user on the basis of the respective data inputted by the user and the estimated yield, wherein a user terminal of the user not only performs a determination whether or not the process processing in every process is normal but also estimates the final number of normal products ordered by the user and obtainable finally.

A semiconductor device inspecting apparatus capable of a high-precision nondestructive inspection with a reduction of external noises, by using a value of an area having no hole as a background value for a correction when measuring an average current, measuring the current in a current differential input amplifier constitution, automatically judging whether a result of the measurement is caused by a defect of the device or of the equipment on the basis of a measured current waveform, measuring a current value of electron beams, and storing and reusing a waiting time between irradiation with electron beams and stabilization of the current measurement value.

Semiconductor device inspecting apparatus

A plurality of measuring positions on a sample are sequentially irradiated with electron beams having identical cross sectional shapes, currents produced in the sample when the individual measuring positions are irradiated with electron beams are measured and the measured currents or physical amounts derived from the measured currents are displayed on a two-dimensional plane as a function of measuring position.

Growing community of inventors

Tokyo, Japan

Yousuke Itagaki