Samsung Display Co., Ltd.

Dongwoo Fine-chem Co., Ltd.

Youngchul Park

Hongsick Park

Daesung Lim

Giyong Nam

Inseol Kuk

Inho Yu

Youngjun Kim

Jong-Hyun Choung

Changsoo Kim

Seon-Il Kim

In-Bae Kim

Jinhyung Kim

Youngjin Yoon

Soomin An

Sangtae Kim

Kyungbo Shim

Byungsu Lee

Jungseek Jung

Seungsoo Lee

Joohwan Chung

Dongki Kim

Jongmun Lee

Jinsook Kim

Suckjun Lee

Haccheol Kim

Sanghoon Jang

A thin film etchant composition for preventing re-adsorption of an etched metal and uniformly etching a thin film is provided. The thin film etchant composition includes about 43 wt % to about 46 wt % of phosphoric acid, about 5 wt % to about 8 wt % of nitric acid, about 10 wt % to about 17 wt % of acetic acid, about 1 wt % to about 3 wt % of iron nitrate, about 0.7 wt % to about 1.5 wt % of phosphate, and deionized water as a remaining amount based on a total weight of the thin film etchant composition.

Thin film etchant composition and method of forming metal pattern by using the same

An etchant composition includes an etchant composition that includes about 0.5 wt % to about 20 wt % of persulfate, about 0.01 wt % to about 2 wt % of a fluorine compound, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 5 wt % of a chlorine compound, about 0.1 wt % to about 10 wt % of an aliphatic sulfonic acid, about 1 wt % to about 20 wt % of an organic acid or an organic acid salt, and water based on a total weight of the etchant composition.

Etchant composition and method of manufacturing a thin film transistor substrate by using the same

An etchant includes, based on a total amount of the etchant, from about 0.5 to about 20 wt % of a persulfate, from about 0.01 to about 2 wt % of a fluorine compound, from about 1 to about 10 wt % of an inorganic acid, from about 0.5 to about 5 wt % of an azole compound, from about 0.1 to about 5 wt % of an electron-donating compound, from about 0.1 to about 5 wt % of a chlorine compound, from about 0.05 to about 3 wt % of a copper salt, from about 0.1 to about 10 wt % of an organic acid or an organic acid salt, and a remaining amount of water.

Etchant and method for manufacturing display device using the same

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Iksan-si, South Korea

Youngchul Park