Stats Chippac Pte. Ltd.

Hyundai Motor Company

Samsung Electronics Co., Ltd.

YoungChul Kim

HeeJo Chi

KyungMoon Kim

Pandi Chelvam Marimuthu

HunTeak Lee

Lan H Hoang

JaeHak Yee

Steve Anderson

KooHong Lee

HeeSoo Lee

Jae Hak Yee

Soo-San Park

Junwoo Myung

Byoung Wook Jang

JoungIn Yang

Jaeshin Yi

Chan Hoon Ko

Hyunil Bae

KeonTaek Kang

ChoongBin Yim

KeonTeak Kang

Yeonho Kim

Jong Hyun Kim

DeokKyung Yang

Baekyu Kim

In Sang Yoon

KyungHoon Lee

Ki Youn Jang

Jang Mi Lee

Seunghyun Hwang

Hun Teak Lee

Kyungha Kim

Oh Han Kim

Jae Han Chung

JoonYoung Choi

YongHee Kang

JaeHyun Lee

Myung Kil Lee

See Chian Lim

Wansoo Kim

Sell Jung

Seong Won Park

Gwang Seob Shin

SungEun Park

Talchol Kim

Heera Lee

Dongeon Kim

Myungkil Lee

Hyunll Bae

An apparatus for inspecting a ventilation characteristic according to various embodiments may comprise: a seating unit to which an object to be inspected is attached, and which has a lower surface and an upper surface facing in a direction opposite to the lower surface and includes at least one through-hole passing through the lower surface and the upper surface; a measuring unit which includes a groove for accommodating at least a portion of the seating unit including the lower surface of the seating unit, and a fluid supply passage for supplying a fluid in a direction facing the object to be inspected which is attached to the seating unit; and a compressing unit which is disposed to apply a pressing pressure to the seating unit at a position opposite to the upper surface of the seating unit and includes a fluid discharge passage so that a fluid supplied from the measurement unit is discharged through the object to be inspected. Other embodiments are also possible.

Apparatus and method for inspecting ventilation

A semiconductor device has a plurality of semiconductor die disposed over a carrier. An electrical interconnect, such as a stud bump, is formed over the semiconductor die. The stud bumps are trimmed to a uniform height. A substrate includes a bump over the substrate. The electrical interconnect of the semiconductor die is bonded to the bumps of the substrate while the semiconductor die is disposed over the carrier. An underfill material is deposited between the semiconductor die and substrate. Alternatively, an encapsulant is deposited over the semiconductor die and substrate using a chase mold. The bonding of stud bumps of the semiconductor die to bumps of the substrate is performed using gang reflow or thermocompression while the semiconductor die are in reconstituted wafer form and attached to the carrier to provide a high throughput of the flipchip type interconnect to the substrate.

Semiconductor device and method of bonding semiconductor die to substrate in reconstituted wafer form

A semiconductor device is made by providing a first semiconductor die having a plurality of contact pads formed over a first surface of the first semiconductor die and having a plurality of through-silicon vias (TSVs) formed within the first semiconductor die. A second semiconductor die is mounted to the first surface of the first semiconductor die using a plurality of solder bumps. At least one of the solder bumps is in electrical communication with the TSVs in the first semiconductor die. The second semiconductor die is mounted to a printed circuit board (PCB) using an adhesive material. A plurality of solder bumps is formed to connect the contact pads of the first semiconductor die to the PCB. An encapsulant is deposited over the first semiconductor die and the second semiconductor die. An interconnect structure is formed over a back surface of the PCB.

Semiconductor device and method of forming a fan-in package-on-package structure using through silicon vias

A semiconductor device includes a carrier with an interface layer applied over the carrier. The interface layer can include non-conductive paste or non-conductive film. A plurality of semiconductor die is mounted to the carrier and interface layer by pressing the semiconductor die to the carrier and interface layer for one second or less, and simultaneously thermal compression bonding multiple semiconductor die to the carrier and interface layer for 5-10 seconds. By pressing the semiconductor die to the interface layer for a short period of time and then simultaneously thermal compression bonding multiple semiconductor die to the interface layer for a second longer period of time, the overall throughput of die bonding increases to process more die per unit of time. An encapsulant is deposited over the semiconductor die. The carrier is removed and interconnect structure is formed over the semiconductor die and encapsulant.

Semiconductor device and method of individual die bonding followed by simultaneous multiple die thermal compression bonding

An integrated circuit packaging system, and a method of manufacture thereof, includes: an embedded trace substrate having bonding sites and traces embedded in a base material, an insulation layer on the traces, the insulation layer having a top surface coplanar with the top surface of the base material; and an integrated circuit die connected to the bonding sites.

Integrated circuit packaging system with surface treatment and method of manufacture thereof

Methods of producing a semiconductor package using dual-sided thermal compression bonding includes providing a substrate having an upper surface and a lower surface. A first device having a first surface and a second surface can be provided along with a second device having a third surface and a fourth surface. The first surface of the first device can be coupled to the upper surface of the substrate while the third surface of the second device can be coupled to the lower surface of the substrate, the coupling occurring simultaneously to produce the semiconductor package.

Methods of manufacturing flip chip semiconductor packages using double-sided thermal compression bonding

A semiconductor device has a semiconductor die disposed over a substrate. The semiconductor die and substrate are placed in a chase mold. An encapsulant is deposited over and between the semiconductor die and substrate simultaneous with bonding the semiconductor die to the substrate in the chase mold. The semiconductor die is bonded to the substrate using thermocompression by application of force and elevated temperature. An electrical interconnect structure, such as a bump, pillar bump, or stud bump, is formed over the semiconductor die. A flux material is deposited over the interconnect structure. A solder paste or SOP is deposited over a conductive layer of the substrate. The flux material and SOP provide temporary bond between the semiconductor die and substrate. The interconnect structure is bonded to the SOP. Alternatively, the interconnect structure can be bonded directly to the conductive layer of the substrate, with or without the flux material.

Semiconductor device and method of simultaneous molding and thermalcompression bonding

A semiconductor package comprises a substrate, a first semiconductor die mounted to the substrate, and a first double side mold (DSM) internal stackable module (ISM) bonded directly to the first semiconductor die through a first adhesive. The first DSM ISM includes a first molding compound, and a second semiconductor die disposed in the first molding compound. The semiconductor package further comprises a first electrical connection coupled between the first semiconductor die and the substrate, and a second electrical connection coupled between the first DSM ISM and the substrate.

Stackable package by using internal stacking modules

A semiconductor device includes a substrate with contact pads. A mask is disposed over the substrate. Aluminum-wettable conductive paste is printed over the contact pads of the substrate. A semiconductor die is disposed over the aluminum-wettable conductive paste. The aluminum-wettable conductive paste is reflowed to form an interconnect structure over the contact pads of the substrate. The contact pads include aluminum. Contact pads of the semiconductor die are disposed over the aluminum-wettable conductive paste. The aluminum-wettable conductive paste is reflowed to form an interconnect structure between the contact pads of the semiconductor die and the contact pads of the substrate. The interconnect structure is formed directly on the contact pads of the substrate and semiconductor die. The contact pads of the semiconductor die are etched prior to reflowing the aluminum-wettable conductive paste. An epoxy pre-dot to maintain a separation between the semiconductor die and substrate.

Semiconductor device and method of making bumpless flipchip interconnect structures

A method of manufacture of an integrated circuit packaging system includes: providing a substrate; attaching a connection post to the substrate, the connection post having a post top and a post side; mounting an integrated circuit die on the substrate, the integrated circuit die having a top die surface; and forming a package body on the substrate, the connection post, and the integrated circuit die.

Integrated circuit packaging system with connection structure and method of manufacture thereof

An integrated circuit packaging system, and method of manufacture therefor, includes: a substrate; a mold cap formed on the substrate; fiducial mark inscribed in the mold cap; a thermal interface material applied over the substrate and referenced by the fiducial mark; and a heat spreader, mounted on the thermal interface material, precisely positioned by a position notch aligned relative to the fiducial mark.

Integrated circuit packaging system with heat spreader and method of manufacture thereof

A method of manufacture of an integrated circuit packaging system includes: mounting an integrated circuit, having a device through via and a device interconnect, over a substrate with the device through via traversing the integrated circuit and the device interconnect attached to the device through via; attaching a conductive support over the substrate with the conductive support adjacent to the integrated circuit; providing a pre-formed interposer, having an interposer through via and a pre-attached interconnect, with the pre-attached interconnect attached to the interposer through via; mounting the pre-formed interposer over the integrated circuit and the conductive support with the pre-attached interconnect over the device through via; and forming an encapsulation over the substrate covering the integrated circuit, the conductive support, and partially covering the pre-formed interposer.

Integrated circuit packaging system having dual sided connection and method of manufacture thereof

A method of manufacture of an integrated circuit packaging system includes: providing a package substrate, having a component side and a system side; mounting a first integrated circuit die on the component side of the package substrate; mounting a second integrated circuit die on the component side of the package substrate; mounting an internal package, having an internal die, over the first integrated circuit die; coupling chip interconnects between the first integrated circuit die, the second integrated circuit die, the internal die, the component side, or a combination thereof, and forming a stacked package body by encapsulating the component side, the first integrated circuit die, the second integrated circuit die, the internal package, and the chip interconnects.

Integrated circuit packaging system with package-in-package and method of manufacture thereof

The present invention relates to a cooling system for cooling a driving motor of a hybrid vehicle and a method for controlling the same which supplies suitable cooling flow according to temperature and temperature change rate of the driving motor. An exemplary embodiment may include: an electric oil pump to generate hydraulic pressure for cooling the driving motor; a switching valve to selectively transmit the hydraulic pressure to the driving motor; a solenoid valve to selectively supply control pressure to the switching valve so as to switch hydraulic lines in the switching valve; and a control portion controlling operations of the electric oil pump and the switching valve, wherein the control portion operates the electric oil pump by various operation amounts or stops the electric oil pump according to temperature of the driving motor and temperature change rate of the driving motor, and turns on or off the solenoid valve.

Cooling system for cooling driving motor of hybrid vehicle and method for controlling the same

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Kyoungki-do, South Korea

YoungChul Kim