Korea Advanced Institute of Science and Technology

Wavenics Inc.

Dynamic Solutions International Corporation

Wavenicsesp

Young-Se Kwon

Kyoung-Min Kim

Kyoung Min Kim

In-Ho Jeong

Sung-Woo Hyun

Jeong-Keun Ji

Bo-In Son

O-Seung Yang

A metal-based photonic device package module that is capable of greatly improving heat releasing efficiency and implementing a thin package is provided. The metal-based photonic device package module includes a metal substrate that is formed the shape of a plate, a metal oxide layer that is formed on the metal substrate to have a mounting cavity, a photonic device that is mounted in the mounting cavity of the metal oxide layer, and a reflecting plane that is formed at an inner surface of the mounting cavity of the metal oxide layer.

Metal-based photonic device package module

Provided is a three-dimensional aluminum package module including: an aluminum substrate; an aluminum oxide layer formed on the aluminum substrate and having at least one first opening of which sidewalls are perpendicular to an upper surface of the aluminum substrate; a semiconductor device mounted in the first opening using an adhesive; an organic layer covering the aluminum oxide layer and the semiconductor device; and a first interconnection line and a passive device circuit formed on the organic layer and the aluminum oxide layer.

Method of fabricating passive device applied to the three-dimensional package module

Three-dimensional package module

A method for manufacturing passive devices and semiconductor packages using a thin metal piece is provided. According to the method, an adhesive layer is formed on a dummy substrate; a thin metal piece is bonded on the adhesive layer; a masking material is attached to the thin metal piece, a dielectric layer is formed; a masking material is attached to form metal pads; a metal pad is formed, and the formed device is attached to a lower substrate using the metal pads; the adhesive layer and the dummy substrate are removed, a masking material is attached on a surface exposed, a region where passive devices are to be formed is patterned, and the thin metal piece is etched at a predetermined depth; and solder bumps for surface mounting are formed.

Method for manufacturing passive device and semiconductor package using thin metal piece

A method for manufacturing passive devices and semiconductor packages using a thin metal piece is provided. According to the method, an adhesive layer is formed on a dummy substrate; a thin metal piece is bonded on the adhesive layer; a masking material is attached to the thin metal piece, a region where vias are to be formed is patterned, the thin metal piece is etched at a predetermined depth; the masking material is removed, the etched portion is filled with polymer to form a flat polymer layer, a masking material is attached on the polymer layer, a region that is to be attached to an IPD or an IC chip is patterned, a metal pad is formed, and the formed devices are attached to a lower substrate using the metal pad; the adhesive layer and the dummy substrate are removed, a masking material is attached on a surface exposed, a region where passive devices are to be formed is patterned, and the thin metal piece is etched at a predetermined depth; and solder bumps for surface mounting are formed.

Disclosed is a coaxial type signal line that solves problems associated with signal interference and the connection of signal lines that are generated in a radio frequency (RF) electrical system. A method for manufacturing the coaxial type signal line includes the steps of forming a groove on a substrate, forming a first ground line on a surface of the groove and a plain surface of the substrate, forming a first dielectric layer including dielectric material on the first ground line formed on the surface of the groove, forming a signal line on the first dielectric layer the signal line for transmitting signals, forming a second dielectric layer including dielectric material on the signal line and the first dielectric layer, and forming a second ground line on the first ground line and the second dielectric layer. Since the signal line in the signal line structure according to the present invention is electrically shielded by the first and second ground lines, interference between the signal line and other signal lines on the semiconductor substrate can be prevented, and accordingly, the signal lines may be designed compactly on a semiconductor substrate and the system size can be reduced.

Coaxial type signal line and manufacturing method thereof

An optical integrated device having an even height such that it can be easily arrayed or integrated with other devices in a single substrate. The device includes a semi-conductor substrate having a substrate-side electrode which is formed on one side of the semi-conductor substrate. A micro-lens layer is epitaxially grown on the opposite side to where the substrate-side electrode is formed. The opposite side also has a hemispherically etched surface. The device also includes epitaxial layers which are grown on a whole area on the micro lens layer and a dielectric film which is formed on the epitaxial layers. Additionally, an epilayer-side electrode is formed on a whole area of the dielectric film.

Array of optical integrated devices with micro-lenses

The present invention relates to a laser diode for optoelectronic integrated circuit, more specifically, to a laser diode for optoelectronic integrated circuit with a rooftop reflector which can be operated by means of a low driving current and a process for preparing the same. A laser diode for optoelectronic integrated circuit of the present invention comprises: a substrate; a waveguide consisting of a N-cladding layer and a passive waveguide layer, which is positioned on the substrate; an active waveguide with a rooftop reflector, which is positioned on the waveguide and has an epitaxial layer of a separating layer, an active layer, a P-cladding layer and a p-ohmic layer; SiO.sub.2 layer with a linear contact opening which is positioned on the active waveguide; an upper metal contact layer which is positioned on the SiO.sub.2 layer; and, a lower metal contact layer which is positioned under the substrate. The laser diode for optoelectronic integrated circuit of the present invention has a high efficiency of utilization of light and a low threshold current, to make the laser diode operational by means of a low driving current.

Growing community of inventors

Daejeon, South Korea

Young-Se Kwon