Samsung Electronics Co., Ltd.

Young-kun Jee

Un-Byoung Kang

Tae-Hong Min

Jang-woo Lee

Sang-Uk Han

Sun-kyoung Seo

Ji-hwang Kim

Jong-bo Shim

Tae-joo Hwang

Yeong-Hwan Choe

Tae-Je Cho

Yong-won Choi

Kyung-wook Paik

Ji-won Shin

A semiconductor package includes a first package substrate, a first semiconductor chip on the first package substrate, a plurality of first chip connection units to connect the first package substrate to the first semiconductor chip, an interposer on the first semiconductor chip, the interposer having a width greater than a width of the first semiconductor chip in a direction parallel to an upper surface of the first package substrate, and an upper filling layer including a center portion and an outer portion, the center portion being between the first semiconductor chip and the interposer, and the outer portion surrounding the center portion and having a thickness greater than a thickness of the center portion in a direction perpendicular to the upper surface of the first package substrate.

Semiconductor package

A semiconductor device includes at least first and second semiconductor chips stacked on each other along a first direction, at least one through-silicon-via (TSV) through at least the first semiconductor chip of the first and second semiconductor chips, a contact pad on the at least one TSV of the first semiconductor chip, the contact pad electrically connecting the TSV of the first semiconductor chip to the second semiconductor chip, and a plurality of dummy pads on the first semiconductor chip, the plurality of dummy pads being spaced apart from each other and from the contact pad along a second direction, and the dummy pads having same heights as the contact pads as measured between respective top and bottom surfaces along the first direction.

Semiconductor device having stacked semiconductor chips interconnected via TSV

A semiconductor device includes at least first and second semiconductor chips stacked on each other along a first direction, at least one silicon-through-via (TSV) through at least the first semiconductor chip of the first and second semiconductor chips, a contact pad on the at least one TSV of the first semiconductor chip, the contact pad electrically connecting the TSV of the first semiconductor chip to the second semiconductor chip, and a plurality of dummy pads on the first semiconductor chip, the plurality of dummy pads being spaced apart from each other and from the contact pad along a second direction, and the dummy pads having same heights as the contact pads as measured between respective top and bottom surfaces along the first direction.

Semiconductor device having stacked semiconductor chips interconnected via TSV and method of fabricating the same

A chip-stacked semiconductor package including a first chip having a plurality of first real bump pads and a plurality of first dummy bump pads, a second chip on the first chip, the second chip including a plurality of real bumps and a plurality of bridge dummy bumps, the plurality of real bumps electrically connected to the plurality of first real bump pads, the plurality of bridge dummy bumps connected to the plurality of first dummy bump pads, and a sealing member sealing the first chip and the second chip may be provided.

Chip-stacked semiconductor package

A non-conductive material layer, selected from a non-conductive film and a non-conductive polymer paste, and containing a dispersion of zinc (Zn) particles is disclosed, together with semiconductor packages including the non-conductive material layer. The non-conductive material layer contains zinc (Zn) particles having an average particle diameter of about 1 nm to about 200 nm in a non-conductive polymer base material of a film type, and a semiconductor package includes the non-conductive film. By using the non-conductive film and/or the non-conductive paste containing the zinc dispersion, e a semiconductor package having excellent electric connection properties and high reliability may be manufactured through simple processes at low manufacturing costs.

Non-conductive film and non-conductive paste including zinc particles, semiconductor package including the same, and method of manufacturing the semiconductor package

Growing community of inventors

Cheonan-si, South Korea

Young-kun Jee