Charm Engineering Co., Ltd.

Jusung Engineering Co., Ltd.

Young Ki Han

Jae Chul Choi

Jung Hwan Choi

Kyung Ho Lee

Kwan Goo Rha

Young Ho Seo

Yong Hwan Lim

Jung Hee Lee

Jun Hyeok Lee

Hee Se Lee

Seng Hyun Chung

Kyung Woong Park

Sun Q Jeon

Hyoung Won Kim

Jae Ho Guahk

Chi Kug Yoon

Young Soo Seo

There is provided a substrate supporter capable of securely supporting a substrate such as a wafer on which a device having a predetermined thin film pattern is formed to remove various impurities formed on the rear surface of the substrate, and a plasma processing apparatus having the same. The plasma processing apparatus includes: at least one arm; and a supporting portion extending from the arm toward a substrate seating position of the substrate, so that the plasma processing apparatus can reduce the likelihood of arc discharges compared with conventional dry etching to increase process yield and product reliability, and ensure stable mounting of a substrate.

Apparatus for plasma processing and method for plasma processing

There are provided an apparatus and method for processing a substrate. By using the apparatus and method, plasma processing can be individually performed on each of edge and rear regions of a substrate in a single chamber. The apparatus includes a chamber providing a reaction space; a stage installed in the chamber; a plasma shielding unit installed opposite to the stage in the chamber; a support unit for supporting a substrate between the stage and the plasma shielding unit; a first supply pipe provided at the stage to supply a reaction or non-reaction gas to one surface of the substrate; and second and third supply pipes provided at the plasma shielding unit, the second supply pipe supplying a reaction gas to the other surface of the substrate, the third supply pipe supplying a non-reaction gas to the other surface.

Apparatus and method for processing substrate

Provided are a plasma processing apparatus and method. The plasma processing apparatus includes a chamber, an upper electrode, a lower electrode, a substrate support, and a movement member. The upper electrode is disposed at an inner upper portion of the chamber. The lower electrode faces the upper electrode at an inner lower portion of the chamber to support a substrate such that a bevel of the substrate is exposed in a substrate level etching process. The substrate support is disposed between the upper electrode and the lower electrode to support the substrate such that a central region of a bottom surface of the substrate is exposed in a substrate backside etching process. The movement member is configured to move the substrate support to separate the substrate from the substrate support in the substrate backside etching process.

Plasma processing apparatus and method for plasma processing

A conventional method of forming a ruthenium thin film has a problem that conditions for improving a surface morphology are contrary to those for improving a step coverage, with respect to an oxygen fraction, a pressure, a temperature, etc. Accordingly, it is difficult to obtain a thin film having the improved properties in both the surface morphology and the step coverage. This invention provides three methods for improving both the surface morphology and the step coverage. As one method of forming the ruthenium thin film, a ruthenium seed layer is first formed using a PECVD process and then a ruthenium thin film is deposited using a thermal CVD process. As another method, a first ruthenium thin film is deposited using a thermal CVD process and then a second ruthenium thin film is formed on the first ruthenium thin film using a PECVD process. As further another method, a ruthenium thin film is deposited using a thermal CVD process and then a surface of the ruthenium thin film is processed using an oxygen containing plasma. According to these methods, both the surface morphology and the step coverage can be improved.

Method of forming ruthenium thin film using plasma enhanced process

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Seoul, South Korea

Young Ki Han