Semes Co., Ltd.

Young Eun Jeon

Ji Hoon Jeong

Young Dae Chung

Tae Shin Kim

Tae Hee Kim

Sung Min Choi

Yun Sang Kim

Jin Hee Hong

Youngjo Jin

Ji Heon Kim

Dong Young Jang

Min Sung Jeon

A substrate processing method capable of stably performing atomic layer etching without damaging a process chamber comprises providing a substrate including a target layer in a chamber, forming a first plasma in the chamber by using a first gas containing chlorine to first reform the target layer, forming a second plasma in the chamber by using a second gas containing oxygen to second reform the first reformed target layer, providing a precursor into the chamber to react the second reformed target layer with the precursor, and removing at least a portion of the target layer by repeating forming the first plasma, forming the second plasma, and providing the precursor.

Apparatus and method for processing substrate

The inventive concept provides a mask treatment apparatus. The mask treatment may include a support unit that supports the mask, and a light irradiation unit that irradiate the mask with a light to adjust a critical dimension of a pattern formed in the mask, wherein the light irradiation unit includes a light source that generates the light, and a light modulation element that modulates the light generated by the light source and forms an irradiation pattern.

Mask processing apparatus and substrate processing apparatus

Growing community of inventors

Ulsan, South Korea

Young Eun Jeon