Tokyo Electron Limited

Tokyo Electron Tohoku Limited

Youichi Deguchi

Satoru Kawakami

Mitsuaki Komino

Yoichi Ueda

Junichi Arami

Nobuo Kawada

Kenji Ishikawa

Hironori Yagi

Isao Yanagisawa

Disclosed is a plasma processing apparatus, comprising a first electrode on which an object to be processed is to be disposed, a second electrode arranged to face the first electrode, a high frequency power supply for supplying a high frequency power between the first and second electrodes, a processing gas supplying mechanism for forming a plasma into a region between the first and second electrodes, and a bias potential detecting mechanism for detecting the bias potential of the first electrode. The bias detecting mechanism has a detecting terminal positioned in the vicinity of the object to be processed.

Plasma processing apparatus

A vacuum processing apparatus includes: a processing chamber for performing a film formation process to a semiconductor wafer in a vacuum; a mounting member provided in the processing chamber and having a mounting surface for mounting a target object; an electrostatic chuck, provided to the mounting surface of the mounting member, for chucking the semiconductor wafer; a heating mechanism for heating the semiconductor wafer; and a processing gas supply mechanism for supplying a processing gas for performing the film formation process to the semiconductor wafer into the processing chamber. The mounting member has a base, a first insulating layer formed on the surface of the base, and a second insulating layer formed on the first insulating layer, and has a conductive layer between the first insulating layer and the second insulating layer on the mounting surface side of the mounting member to obtain the above electrostatic chuck constituted by the first insulating layer, the second insulating layer, and the conductive layer, and the heating mechanism has a heating member provided between the first insulating layer and the second insulating layer on the lower surface side of the mounting member.

Vacuum processing apparatus

The present invention provides a plasma process apparatus wherein RF power is applied to a process gas, thereby to convert the gas into plasma for processing an object, the apparatus having a process chamber, an upper electrode located in the process chamber and having a gas-supplying section for supplying a process gas, a lower electrode located in the process chamber, having a cooling means, and opposing the upper electrode, for supporting an object, and RF power supplying means electrically connected to the lower electrode, protruding from the process chamber and connected to a RF power supply, for supplying RF power between the upper and lower electrodes, wherein the RF power supplying means includes, an outer conductive pipe surrounding the inner conductive rod and spaced therefrom, and a fixing member inserted between the inner conductive rod and the outer conductive pipe and having concaves and convexes, the inner conductive rod and the outer conductive pipe being electrically connected to an RF power supply source.

Plasma process apparatus

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Tokyo, Japan

Youichi Deguchi