Texas Instruments Corporation

National Semiconductor Corporation

You Chye How

Shee Min Yeong

Peng Soon Lim

Sek Hoi Chong

Huay Yann Tay

Nikhil Vishwanath Kelkar

Christopher Daniel Manack

Anis Fauzi Bin Abdul Aziz

Viraj Ajit Patwardhan

Lee Han Meng@Eugene Lee

Lee Han Meng@ Eugene Lee

Patrick Francis Thompson

Michael Todd Wyant

Matthew John Sherbin

Chong Han Lim

Terh Kuen Yii

Siew Kee Lee

Tian Oon Goh

Kooi Choon Ooi

Ken Fei Lim

Soi Chong Low

Maria Christina Bernardo Violante

Franklin Santos Marcelino

Maria Christina Bernando Violante

In examples, a chip scale package (CSP) comprises a semiconductor die; a conductive terminal coupled to the semiconductor die; and a non-conductive coat covering a backside of the semiconductor die and a sidewall of the semiconductor die. The non-conductive coat has a thickness of less than 45 microns.

Coated semiconductor dies

A semiconductor package includes a die pad and leads extending from the die pad. Each lead has a free end with outer surfaces extending at angles from one another. An electrically conductive plating material covers at least portions of the outer surfaces. A die attached to the die pad is electrically connected to the leads. An insulating layer extends over the leads and the die such that the free ends of the leads are exposed.

Leads for leadframe and semiconductor package

Multi-die integrated circuit packages and methods of manufacturing the same are disclosed. An example integrated circuit package includes a first leadframe, a first die on a first side of the first leadframe, and a second die on a second side of the first leadframe opposite the first side. The example integrated circuit package further includes external second leadframe separate from the first leadframe.

Multi-die integrated circuit packages and methods of manufacturing the same

A method for forming a multilevel leadframe for an integrated circuit is provided. A conductive sheet is etched from one side to form a thinner region within a frame region for leads lines and bond pads. The conductive sheet is etched to form a plurality of bond pads in a first level of the thinner region arranged in at least a first row and a second row. Each bond pad has a pad width and is separated from an adjacent bond pad by a bond pad clearance distance. The conductive sheet is etched from an opposite side to form a plurality of lead lines in a second level of the thinner region having a line width and is separated from an adjacent lead line by at least a lead line clearance distance. Each bond pad of the second plurality of bond pads is connected to one of the plurality of lead lines on the second level that is routed between adjacent bond pads in the first row, so that the lead lines are routed on a different level from the bond pads.

Methods for making a multilevel leadframe by etching a conductive sheet from two opposite sides

An integrated circuit (IC) package includes a first leadframe having a top surface and a bottom surface. An IC die has an active side coupled to the first leadframe bottom surface and has a back side. A second leadframe has a top surface and a bottom surface. The back side of said IC chip is coupled to the top surface of the second leadframe.

Integrated circuit package having an IC die between top and bottom leadframes

Disclosed examples include a method of making a semiconductor die package comprising arranging at least one preformed die attach pad and at least two preformed leads on a lead frame carrier in a predetermined configuration to form a lead frame, attaching a semiconductor die to the at least one preformed die attach pad, wire bonding the semiconductor die to the at least two preformed leads, forming a molding structure including at least part of the semiconductor die and the at least two preformed leads, and removing the molding structure from the lead frame carrier.

Method for making lead frames for integrated circuit packages

A method of making an integrated circuit package. A leadframe having a die attach paddle surrounded by lead portions is formed. Middle channels underlying in said die attach paddle portion in a region thereof adapted to receive a first die are formed.

Integrated circuit package fabrication with die attach paddle having middle channels

An integrated circuit package having a die attach paddle, a power die mounted on the die attach paddle and a controller die mounted on the die attach paddle. The die attach paddle has at least one recessed portion at least partially underlying the controller die.

Integrated circuit package with die attach paddle having at least one recessed portion

A method for packaging integrated circuit die such that each package includes die with integrated passive components mounted to either the back surface, the active surface or both the back and active surfaces of the die.

Integrated passive flip chip package

In one aspect of the present invention, a method of sawing a semiconductor wafer will be described. A semiconductor wafer is positioned in a wafer sawing apparatus that includes a sawing blade and a movable support structure that physically supports the semiconductor wafer. The semiconductor wafer is coupled with the support structure with various layers, including a die attach film, an adhesive and a base film. The die attach film is cut with the sawing blade. During the cutting operation, a contact portion of the sawing blade engages one of the layers and moves at least partly in one direction. While the contact portion of the sawing blade engages the layer, the support structure moves in the opposite direction. Various aspects of the present invention relate to arrangements and a wafer sawing apparatus that involve the aforementioned sawing method.

Method and apparatus for dicing die attach film on a semiconductor wafer

Methods of packaging integrated circuits are described. One method relates to attaching a singulated device wafer to a substrate. The singulated device wafer includes a multiplicity of integrated circuit dice arranged in a first configuration. The method also involves a substrate, which includes a sacrificial semiconductor wafer having device areas with metalized contacts. The device areas on the substrate may be arranged in a configuration matching that of the dice on the device wafer. The method also entails aligning the singulated device wafer as a whole with the substrate so that the dice of the device wafer are positioned substantially simultaneously over associated device areas on the substrate. The method also involves attaching the dice from the singulated wafer as a whole substantially simultaneously to the substrate such that each die of the device wafer is attached to an associated device area of the substrate.

Methods and systems for packaging integrated circuits

Panel level methods and systems for packaging integrated circuits are described. In a method aspect of the invention, a substrate formed from a sacrificial semiconductor wafer is provided having a plurality of metallized device areas patterned thereon. Each device area includes an array of metallized contacts and a die attach area. Dice are mounted onto each device area and electrically connected to the array of contacts. The entire surface of the substrate including the dice, contacts and electrical connections is then encapsulated. The semiconductor wafer is then sacrificed leaving portions of the contacts exposed allowing the contacts to be used as external contacts in an IC package. In various embodiments, other structures, including die attach pads, may be incorporated into the device areas as desired. By way of example, structures having thicknesses in the range of 10 to 20 microns are readily attainable.

Methods and systems of packaging integrated circuits

An IC package and methods for making the same are described. The IC package includes a die and a heat sink that is attached to the back surface of the die with a thermal interface material layer. The heat sink includes a base and a partition. The partition extends around the periphery of the base and is offset from the outer edge of the base such that a ledge region is formed that surrounds the periphery of the base. The inner surfaces of the partition define an inner region that includes heat dissipation structures. A molding material encapsulates at least portions of the die and the ledge region around the periphery of the heat sink while leaving the inner region of the heat sink unencapsulated by molding material and exposed. The molding material covering the ledge region provides a locking feature that secures the heat sink in the package.

Integrated circuit package with integrated heat sink

The present invention relates to methods and arrangements for forming a low stress cavity package. Particular methods may be performed with existing packaging equipment. In one such method, a leadframe laminated with adhesive film is provided. Integrated circuit dice are connected to the leadframe by reflowing solder between bond pads on the active surface of each die and the leadframe. A viscous thermosetting material is dispensed around the periphery of the active surface of each die. The thermosetting material fills gaps between the solder joint connections and the adhesive film. As a result, the thermosetting material, solder joint connections, each integrated circuit die and the adhesive film define and seal a protective cavity between the active surface of the die and the adhesive film. Portions of each die, leads, solder joint connections and adhesive film are encapsulated with a molding material that is prevented from entering the sealed cavity.

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