Tokyo Electron Limited

Yosuke Serizawa

Hiroaki Ashizawa

Hideo Nakamura

Yoshikazu Ideno

Seishi Murakami

Takaya Shimizu

A method of forming a group V metal nitride film on a substrate includes: providing the substrate within a processing container; and forming the group V metal nitride film on the substrate by alternately supplying, into the processing container, a raw material gas including a group V metal and a reducing gas including a nitrogen-containing gas.

Film forming method, method for manufacturing semiconductor device, film forming device, and system for manufacturing semiconductor device

A film forming method includes: repeatedly performing a source gas adsorption process including supplying a source gas containing a metal element to form a nitride film on a substrate in a chamber and purging a residual gas, and a nitriding process including supplying a nitriding gas onto the substrate and purging a residual gas; and supplying a hydrazine-based compound gas as a part or all of the nitriding gas.

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Yamanashi, Japan

Yosuke Serizawa