Hitachi-kokusai Electric Inc.

Sumitomo Metal Mining Company, Ltd.

Yosuke Ota

Yoshiro Hirose

Naonori Akae

Yushin Takasawa

Ryota Sasajima

Kojiro Yokozawa

Norikazu Mizuno

Kenji Kanayama

Hidetoshi Yamabe

Atsushi Sano

Kiyohiko Maeda

Kazuyuki Okuda

Atsushi Tofuku

Osamu Kasahara

Naonari Akae

Provided are excellent coated lithium-nickel composite oxide particles with which it is possible, due to the high environmental stability thereof, to minimize the incidence of impurities owing to absorption of moisture and carbon dioxide gas, said particles having high adhesiveness such that the coating layer does not easily delaminate, and having lithium-ion conductivity. The coated lithium-nickel composite oxide particles, in which an electroconductive polymer is cross-linked to the lithium-nickel composite oxide particles by a three-dimensional structure, are electrically and ionically conductive, and the compound is capable of suppressing the transmission of moisture and carbon dioxide. It is therefore possible to provide coated lithium-nickel composite oxide particles for a lithium-ion cell positive-electrode active substance that is excellent for use in a lithium-ion cell.

Coated lithium-nickel composite oxide particles, and method for producing coated lithium-nickel composite oxide particles

To provide: coated nickel-based lithium-nickel composite oxide particles which are able to be handled in the atmosphere and enable the achievement of a coating film of a lithium ion conductor having no adverse effects on battery characteristics; and a method for producing the coated nickel-based lithium-nickel composite oxide particles. A method for producing coated nickel-based lithium-nickel composite oxide particles, which comprises: an organic compound radicalization step wherein a radicalized organic compound is obtained by introducing an organic compound having 8 or less carbon atoms into a reaction gas, which has been excited into a plasma in the atmosphere, together with a carrier gas and radicalizing the organic compound; and a coating step wherein the surface of each nickel-based lithium-nickel composite oxide particle is covered with a coating film that contains an organic compound of a polymer or copolymer by bringing the radicalized organic compound into contact with the surfaces of the nickel-based lithium-nickel composite oxide particles.

Method for producing coated nickel-based lithium-nickel composite oxide particles

Provided are excellent coated lithium-nickel composite oxide particles which are capable of suppressing the occurrence of impurities produced by absorbing water and carbonic acid gas as a result of the high environmental stability thereof, have strong adhesion properties, do not result in easy coating layer detachment, and also exhibit lithium ion conductivity. The surfaces of the lithium-nickel composite oxide particles are coated with a polymer or copolymer comprising one or more types selected from a group consisting of a modified polyolefin resin, a polyester resin, a polyphenol resin, a polyurethane resin, an epoxy resin, a silane-modified polyether resin, a silane-modified polyester resin, a silane-modified polyphenol resin, a silane-modified polyurethane resin, a silane-modified epoxy resin, and a silane-modified polyamide resin. As a result, the coated lithium-nickel composite oxide particles exhibit conductivity, and said compound is capable of suppressing the transmission of water and carbonic acid gas. Consequently, it is possible to provide coated lithium-nickel composite oxide particles for use in a lithium-ion battery positive electrode active material which is excellent for use in a lithium-ion battery.

Coated lithium-nickel composite oxide particles and method for producing coated lithium-nickel composite oxide particles

Provided are exceptional covered lithium-nickel composite oxide particles that have lithium ion conductivity, the high environmental stability of said particles making it possible to inhibit the generation of impurities from the absorption of water and carbon dioxide; high adhesiveness also being achieved, and the coating layer not peeling off easily. The covered lithium-nickel composite oxide particles for the positive electrode active material in a lithium ion cell, said particles being obtained by covering the surfaces of nickel-based lithium-nickel composite oxide particles with a polymer composition containing an electron-nonconductive polymer and an electron-conductive polymer, are covered nickel-based lithium-nickel composite oxide particles having excellent environmental stability and no adverse effect on cell characteristics.

Covered lithium-nickel composite oxide particles, and method for manufacturing covered lithium-nickel composite oxide particles

To provide excellent lithium-nickel composite oxide particles which have high environmental stability and are thus capable of suppressing generation of impurities due to absorption of moisture and a carbon dioxide gas, while being prevented from easy separation of a coating film because of high adhesion thereof and having lithium ion conductivity. Coated lithium-nickel composite oxide particles, which are obtained by coating the surfaces of lithium-nickel composite oxide particles with a predetermined coating material, have electrical conductivity and ion conductivity and are capable of suppressing permeation of moisture and a carbon dioxide gas. Consequently, the present invention is able to provide coated lithium-nickel composite oxide particles for positive electrode active materials of lithium ion batteries, which is excellent for use in lithium ion batteries.

Provided are: superior coated lithium-nickel composite oxide particles which have an environmental stability that enables suppression of the occurrence of impurities due to absorption of moisture or carbon dioxide, which have high adhesion that prevents a coating layer from readily separating, and which have lithium ion conductivity; and a method for producing such particles. Provided is a method for producing coated lithium-nickel composite oxide particles, the method being characterized by contacting a cyclic siloxane with the surfaces of nickel-based lithium-nickel composite oxide particles to form surface coats. The particles have high adhesion to a coating layer and as a compound can suppress the permeation of moisture and carbon dioxide, and also have lithium ion conductivity. It is therefore possible to provide coated lithium-nickel composite oxide particles that are excellent for use in lithium ion cells.

Provided is a method of manufacturing a semiconductor device. The method includes: (a) forming an oxide film having a predetermined thickness on a substrate by alternately repeating: (a-1) forming a layer containing a predetermined element on the substrate by supplying a source gas containing the predetermined element into a process vessel accommodating the substrate and exhausting the source gas from the process vessel; and (a-2) changing the layer containing the predetermined element into an oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas into the process vessel, wherein inside of the process vessel is under a heated atmosphere having a pressure lower than an atmospheric pressure; and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel; and (b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, wherein the inside of the process vessel is under the heated atmosphere having the pressure lower than the atmospheric pressure, and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel.

Method of manufacturing semiconductor device and substrate processing apparatus

Provided are: forming an oxycarbonitride film, an oxycarbide film or an oxide film on a substrate by alternately performing a specific number of times: forming a first layer containing the specific element, nitrogen and carbon, on the substrate, by alternately performing a specific number of times, supplying a first source containing the specific element and a halogen-group to the substrate in a processing chamber, and supplying a second source containing the specific element and an amino-group to the substrate in the processing chamber; and forming a second layer by oxidizing the first layer by supplying an oxygen-containing gas, and an oxygen-containing gas and a hydrogen-containing gas to the substrate in the processing chamber.

Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus

There is provided a method for manufacturing a semiconductor device, including forming a film on a substrate by performing a cycle one or more times. The cycle includes forming a first layer containing silicon, nitrogen, and carbon by supplying a first silane-based source having a halogen-based ligand to the substrate and supplying a second silane-based source having amino groups to the substrate. The cycle also includes forming a second layer by modifying the first layer by performing supplying a reactive gas different from each of the sources, to the substrate.

Method for manufacturing semiconductor device, method for processing substrate and substrate processing apparatus

A substrate processing apparatus capable of forming an oxide film on a substrate by forming a layer on the substrate by supplying a source gas into a process vessel accommodating the substrate via the first nozzle, and simultaneously supplying an oxygen-containing gas through a second nozzle and a hydrogen-containing gas through a first nozzle into the process vessel having an inside pressure thereof lower than atmospheric pressure; mixing and reacting the oxygen-containing gas with the hydrogen-containing gas in a non-plasma atmosphere within the process vessel to generate atomic oxygen; and oxidizing the layer with the atomic oxygen to change the layer into an oxide layer is disclosed.

Substrate processing apparatus

There is provided a substrate processing apparatus, including a processing chamber configured to house a substrate, a first source supply system configured to supply a chlorosilane-based source to the substrate in the processing chamber, a second source supply system configured to supply an aminosilane-based source to the substrate in the processing chamber and a reactive gas supply system configured to supply a reactive gas different from each of the sources, to the substrate in the processing chamber. The substrate processing apparatus further includes a controller configured to control the first source supply system, the second source supply system, and the reactive gas supply system, so that a process of forming an insulating film on the substrate is performed by an alternating process.

A method that includes: forming a specific element-containing layer by supplying a source gas to the substrate heated in a processing vessel, under a condition that a thermal decomposition reaction of the source gas is caused; changing the specific element-containing layer to a nitride layer by supplying a nitrogen-containing gas to the substrate; and changing the nitride layer to an oxynitride layer by supplying an oxygen-containing gas to the substrate, the source gas is sprayed in parallel to a surface of the substrate more strongly than a case of spraying the inert gas in parallel to the surface of the substrate in purging the inside of the processing vessel, by supplying an inert gas or a hydrogen-containing gas through the nozzle.

Method of manufacturing an oxynitride film for a semiconductor device

Provided is a substrate processing apparatus. The apparatus includes: a process vessel, a heater, a source gas supply system, an oxygen-containing gas supply system, a hydrogen-containing gas supply system, a pressure regulator, and a controller. The controller is configured to control the parts so as to perform: (a) forming an oxide film on a substrate by alternately repeating: (a-1) forming a layer by supplying a source gas into the process vessel accommodating the substrate; and (a-2) changing the layer into an oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas into the process vessel, the inside of the process vessel being under a heated atmosphere having a low pressure; and (b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, the inside of the process vessel being under the heated atmosphere having the low pressure.

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Toyama, Japan

Yosuke Ota