Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Toshiba Medical Systems Corporation

Yosuke Okamoto

Manabu Takakuwa

Yoshinori Hagio

Nobuhiro Komine

Kentaro Kasa

Takashi Koike

Hidenori Sato

Kazutaka Ishigo

Kazuhiro Segawa

Kazuya Fukuhara

Satoru Nakanishi

Hiroyuki Mizuno

Tetsuya Kugimiya

Naruomi Akino

Takaki Hashimoto

Osamu Yamane

Hiroyuki Tanizaki

Kentaro Okuda

Miki Toshima

Taketo Kuriyama

Yuu Yamayose

Naoko Toyoshima

Yasunori Takase

Masamichi Kishimoto

Yuki Murasaka

According to one embodiment, in a position measuring method, alignment measurement in a light exposure process is executed by irradiating a first mark with light having a wavelength of &#x3bb;1, with respect to a processing object that includes a first layer and a second layer stacked above a substrate and a resist applied on the second layer. The first mark is provided in the first layer and includes a plurality of segments arranged at a pitch smaller than a resolution limit given by light having the wavelength of &#x3bb;1. Then, overlay measurement is executed by irradiating the first mark and a second mark with light having a wavelength of &#x3bb;2 shorter than the wavelength of &#x3bb;1. The second mark has been formed by performing a light exposure and development process to the resist, and includes a plurality of segments arranged at the pitch.

Position measuring method, position measuring apparatus, and semiconductor device manufacturing method

According to one embodiment, an imprint device includes a holding unit, a mounting unit, a moving unit, a curing unit, a pressing portion, and a detecting portion. The holding unit holds template having a pattern portion pressed onto a transfer portion provided on a substrate. The mounting unit mounts the substrate. The moving unit is provided on at least either the holding unit or the mounting unit. The moving unit moves the holding unit and the mounting unit in directions approaching each other or directions away from each other. The curing unit cures the transfer portion onto which the pattern portion of the template is pressed. The pressing portion pushes the template pressed onto the transfer portion in a direction intersecting a pressing direction of the template. The detecting portion detects a position of the template pushed by the pressing portion.

Imprint device and pattern forming method

A pattern accuracy detecting apparatus includes a stage for supporting a substrate, an optical warpage detecting unit that measures a shape of a substrate disposed on the stage, an optical pattern detection unit that detects a position of a pattern on the substrate, and a processing unit that corrects the detected pattern position based on the measured shape of the substrate.

Pattern accuracy detecting apparatus and processing system

According to one embodiment, an adjusting unit adjusts a refracting angle of incident light with respect to a substrate, a detector detects reflected light from the substrate, and a calculating unit calculates positional deviation of the pattern based on patterns respectively reflected in reflected lights obtained from the incident light generating N number of refracting angles with respect to the substrate, where N is an integer of two or greater.

Positional deviation measuring device, non-transitory computer-readable recording medium containing a positional deviation measuring program, and method of manufacturing semiconductor device

According to one embodiment, a method for measuring pattern misalignment, includes: a first step obtaining image data; a second step specifying a measurement region; a third step calculating a first shift amount (x, y); a fourth step determining, after calculating the first shift amount, a first distribution; a fifth step executing a plurality of times the second step, the third step, and the fourth step; a seventh step calculating a second shift amount (x, y); an eighth step determining, after calculating the second shift amount, a second distribution; a ninth step executing a plurality of times the sixth step, the seventh step, and the eighth step; and a tenth step calculating a difference (x&#x2212;x, y&#x2212;y) between the second pattern misalignment and the first pattern misalignment.

Method for measuring pattern misalignment

An EUV exposure apparatus according to embodiments includes a reticle stage which suctions a rear surface side of an EUV mask to retain the EUV mask. In addition, the EUV exposure apparatus includes a detection unit which detects a position of a measurement mark formed on the rear surface of the EUV mask in the state where the EUV mask is suctioned on the reticle stage. In addition, the EUV exposure apparatus includes a control unit which calculates a distortion amount of the EUV mask based on the position of the measurement mark and performs exposure control on a wafer while correcting the distortion amount.

EUV mask

According to one embodiment, a measurement mark includes: a first line pattern, first lines extending in a first direction, the first lines arranged in a second direction in the first line pattern, the first line pattern capable of forming a first moire pattern by overlapping with an arrangement pattern including a pattern, and a first polymer and a second polymer being alternately arranged in the pattern; a second line pattern, second lines extending in the first direction, the second lines being arranged in the second direction in the second line pattern, the second line pattern capable of forming a second moire pattern by overlapping with the arrangement pattern; and a reference pattern with a reference position configured to assess a first shift amount from the reference position of the first moire pattern and a second shift amount from the reference position of the second moire pattern.

Measurement mark, method for measurement, and measurement apparatus

An exposure apparatus according to an embodiment controls the positioning between layers using an alignment correction value calculated on the basis of lower layer position information of a lower-layer-side pattern and upper layer position information of an upper-layer-side pattern. The lower layer position information includes alignment data, a focus map, and a correction value which is set on the basis of the previous substrate. The upper layer position information includes alignment data, a focus map, and a correction value which is a correction value for the positioning and is used when the upper-layer-side pattern is transferred.

Exposure apparatus, exposure method, and method of manufacturing semiconductor device

According to one embodiment, generating virtual data by mirroring data based on a dimension measurement result in a measurement region on an inner side of a shot region to a non-shot region on an outer side of a shot edge, and calculating dose data of the measurement region and a non-measurement region based on data in the measurement region and the virtual data are included.

Dose-data generating apparatus

According to one embodiment, a positional deviation measuring method includes measuring a positional deviation of a device pattern formed in a lower layer portion using an alignment mark of the lower layer portion as a reference; measuring a positional deviation of a device pattern formed in an upper layer portion above the lower layer portion using an alignment mark of the upper layer portion as a reference; measuring a positional deviation between the alignment mark of the lower layer portion and the alignment mark of the upper layer portion; and calculating a positional deviation between the device patterns based on the positional deviation between the alignment marks.

Pattern forming method, positional deviation measuring method and photomask

According to one embodiment, a method for making a correction map of a dose amount of EUV light used when exposing with the EUV light, includes estimating an exposure result based on an initial correction map of the dose amount and flare of the EUV light, determining a goodness of the exposure result, and correcting the initial correction map in the case where the exposure result is unacceptable. And, the correcting of the initial correction map, the estimating of the exposure result, and the determining of the goodness are repeated until the exposure result is good.

Method for making correction map of dose amount, exposure method, and method for manufacturing semiconductor device

A photo mask for exposing according to an embodiment includes a mark pattern arranged in a mark region that is different from an effective region to form a semiconductor device; and a regular pattern arranged in the mark region and around the mark pattern and smaller than the mark pattern in size and pitch.

Mask and method for fabricating semiconductor device

According to one embodiment, a photomask includes a substrate, a film portion, a pattern, and a plurality of detection marks. The film portion is provided on a surface of the substrate. The film portion has a light transmittance lower than light transmittance of the substrate. The pattern is provided in a surface of the film portion. The pattern is configured to be transferred to a transfer target. The plurality of detection marks is provided in the film portion, with intensity of light transmitted through the detection marks being suppressed so as to suppress transfer the detection marks to the transfer target.

Photomask and method for manufacturing the same

Dose-data generating apparatus, dose-data generating method, and manufacturing method of semiconductor device

An unevenness inspection method for inspecting presence of unevenness in a panel material, the method includes: acquiring a plurality of primary images by imaging the panel material under inspection on a plurality of levels of condition; creating a plurality of secondary images by processing the plurality of primary images to enhance variation of the image; creating a composite image by combining the plurality of secondary images with a prescribed weighting; and determining the presence of unevenness using the composite image, the prescribed weighting being determined so that a region having the unevenness can be distinguished from the other region, when the plurality of secondary images are created for the panel material for training use having unevenness and are combined into a composite image.

Growing community of inventors

Mie, Japan

Yosuke Okamoto