Mitsubishi Materials Corporation

Mitsubishi Shindoh Co., Ltd.

Ulvac, Inc.

Yosuke Nakasato

Keiichiro Oishi

Takashi Hokazono

Michio Takasaki

Kazunari Maki

Kenichi Yaguchi

Shinji Tanaka

Satoru Mori

Haruhiko Asao

Katsuhiko Hata

A copper alloy sheet for terminal and connector materials contains 4.5 mass % to 12.0 mass % of Zn, 0.40 mass % to 0.9 mass % of Sn, 0.01 mass % to 0.08 mass % of P, and 0.20 mass % to 0.85 mass % of Ni with a remainder being Cu and inevitable impurities, a relationship of 11&#x2264;[Zn]+7.5&#xd7;[Sn]+16&#xd7;[P]+3.5&#xd7;[Ni]&#x2264;19 is satisfied, a relationship of 7&#x2264;[Ni]/[P]&#x2264;40 is satisfied in a case in which the content of Ni is in a range of 0.35 mass % to 0.85 mass %, an average crystal grain diameter is in a range of 2.0 &#x3bc;m to 8.0 &#x3bc;m, an average particle diameter of circular or elliptical precipitates is in a range of 4.0 nm to 25.0 nm or a proportion of the number of precipitates having a particle diameter in a range of 4.0 nm to 25.0 nm in the precipitates is 70% or more, an electric conductivity is 29% IACS or more, a percentage of stress relaxation is 30% or less at 150&#xb0; C. for 1000 hours as stress relaxation resistance, bending workability is R/t&#x2264;0.5 at W bending, solderability is excellent, and a Young's modulus is 100&#xd7;10N/mmor more.

Copper-alloy plate for terminal/connector material, and method for producing copper-alloy plate for terminal/connector material

Provided is a copper alloy containing 18% by mass to 30% by mass of Zn, 1% by mass to 1.5% by mass of Ni, 0.2% by mass to 1% by mass of Sn, and 0.003% by mass to 0.06% by mass of P, the remainder including Cu and unavoidable impurities. Relationships of 17&#x2264;f1=[Zn]+5&#xd7;[Sn]&#x2212;2&#xd7;[Ni]&#x2264;30, 14&#x2264;f2=[Zn]&#x2212;0.5&#xd7;[Sn]&#x2212;3&#xd7;[Ni]&#x2264;26, 8&#x2264;f3={f1&#xd7;(32&#x2212;f1)}&#xd7;[Ni]&#x2264;23, 1.3&#x2264;[Ni]+[Sn]&#x2264;2.4, 1.5&#x2264;[Ni]/[Sn]&#x2264;5.5, and 20&#x2264;[Ni]/[P]&#x2264;400 are satisfied. The copper alloy has a metallographic structure of an &#x3b1; single phase.

Copper alloy and copper alloy sheet

The present invention relates to a copper alloy sheet for terminal and connector materials, which is excellent in terms of tensile strength, proof stress, Young's modulus, electric conductivity, bending workability, stress corrosion crack resistance, stress relaxation characteristics and solderability.

A copper alloy according to the present invention includes 17 mass % to 34 mass % of Zn, 0.02 mass % to 2.0 mass % of Sn, 1.5 mass % to 5 mass % of Ni, and a balance consisting of Cu and unavoidable impurities, in which relationships of 12&#x2266;f1=[Zn]+5&#xd7;[Sn]&#x2212;2&#xd7;[Ni]&#x2266;30, 10&#x2266;[Zn]&#x2212;0.3&#xd7;[Sn]&#x2212;2&#xd7;[Ni]&#x2266;28, 10&#x2266;f3={f1&#xd7;(32&#x2212;f1)&#xd7;[Ni]}&#x2266;33, 1.2&#x2266;0.7&#xd7;[Ni]+[Sn]&#x2266;4, and 1.4&#x2266;[Ni]/[Sn]&#x2266;90 are satisfied, conductivity is 13% IACS to 25% IACS, a ratio of an &#x3b1; phase is 99.5% or more by area ratio or an area ratio of a &#x3b3; phase (&#x3b3;) % and an area ratio of a &#x3b2; phase (&#x3b2;) % in an &#x3b1; phase matrix satisfy a relationship of 0&#x2266;2&#xd7;(&#x3b3;)+(&#x3b2;)&#x2266;0.7.

Copper alloy

A copper alloy wiring film of a flat panel display of the present invention and a sputtering target for forming the same have a composition including Mg: 0.1 to 5 atom %; either one or both of Mn and Al: 0.1 to 11 atom % in total; and Cu and inevitable impurities as the balance, and if necessary, may be further including P: 0.001 to 0.1 atom %.

Sputtering target for forming wiring film of flat panel display

A copper alloy sheet according to one aspect contains 28.0 mass % to 35.0 mass % of Zn, 0.15 mass % to 0.75 mass % of Sn, 0.005 mass % to 0.05 mass % of P, and a balance consisting of Cu and unavoidable impurities, in which relationships of 44&#x2267;[Zn]+20&#xd7;[Sn]&#x2267;37 and 32&#x2266;[Zn]+9&#xd7;([Sn]&#x2212;0.25)&#x2266;37 are satisfied. The copper alloy sheet according to the aspect is manufactured by a manufacturing process including a finish cold-rolling process of cold-rolling a copper alloy material, an average grain size of the copper alloy material is 2.0 &#x3bc;m to 7.0 &#x3bc;m, and a sum of an area ratio of a &#x3b2; phase and an area ratio of a &#x3b3; phase in a metallographic structure of the copper alloy material is 0% to 0.9%.

Copper alloy sheet and method of manufacturing copper alloy sheet

This Cu alloy sputtering target includes, in terms of atomic percent: Al: 1% to 10%; and Ca: 0.1% to 2%, with the balance being Cu and 1% or less of inevitable impurities. This thin film transistor includes: a gate electrode layer joined to the surface of a glass substrate through an adhesion layer; a gate insulating layer; a Si semiconductor layer; an n-type Si semiconductor layer; a barrier layer; a wire layer composed of a drain electrode layer and a source electrode layer, both of which are mutually divided; a passivation layer; and a transparent electrode layer, wherein the barrier layer is formed by sputtering under an oxidizing atmosphere using the Cu alloy sputtering target.

Thin film transistor having a barrier layer as a constituting layer and Cu-alloy sputtering target used for sputter film formation of the barrier layer

This wiring layer structure includes: an underlying substrate of a semiconductor substrate or a glass substrate; an oxygen-containing Cu layer or an oxygen-containing Cu alloy layer which is formed on the underlying substrate; an oxide layer containing at least one of Al, Zr, and Ti which is formed on the oxygen-containing Cu layer or the oxygen-containing Cu alloy layer; and a Cu alloy layer containing at least one of Al, Zr, and Ti which is formed on the oxide layer.

Growing community of inventors

Osaka, Japan

Yosuke Nakasato