Screen Holdings Co., Ltd.

Yosuke Hanawa

Yuta Sasaki

Katsuhiko Miya

Dai Ueda

Hiroaki Kitagawa

Katsuya Okumura

Soichi Nadahara

Shogo Kunieda

A learning device includes a hardware processor, wherein the hardware processor acquires a film thickness of a solid or a liquid formed on the substrate by driving a substrate processing device under a first condition, and causes a learning model to learn first training data including the film-thickness characteristic acquired by driving of the substrate processing device under the first condition.

Learning device, information processing apparatus, substrate processing device, substrate processing system, learning method, recipe determination method and non-transitory computer-readable medium storing learning program

A substrate processing liquid is used to etch a substrate in which at least either a bottom wall or a side wall forming a trench structure is an etched layer made of metal or a metal compound. The substrate processing liquid includes a chemical liquid containing HOmolecules or HOfunctioning as an etchant for etching the metal, and a complex forming agent containing NHand forming a complex with ions of the metal and is adjusted to a pH of 5 or more.

Substrate processing liquid for etching a metal layer, substrate processing method and substrate processing apparatus

A substrate processing technique including a process of forming a liquid film on an upper surface of a substrate and excellently solidifying the liquid film is provided. A substrate processing method includes an atmosphere control step of supplying a drying gas to a front surface of a substrate on which a pattern has been formed and to which a liquid has adhered and making a dry atmosphere around the front surface of the substrate, a to-be-solidified liquid supplying step of supplying a to-be-solidified liquid to the front surface of the substrate, and a solidification step of forming a solidified mass by solidifying a liquid film of the to-be-solidified liquid. The atmosphere control step is started before the liquid film of the to-be-solidified liquid supplied to the front surface of the substrate in the to-be-solidified liquid supplying step is formed.

Substrate processing method and substrate processing device

A processing liquid containing a sublimable material is supplied to a front surface of a substrate to which a liquid adheres to form a liquid film. The liquid film is solidified into a solidified body. Nitrogen gas is supplied to the solidified body formed on the front surface of the substrate so that the flow rate thereof per unit area is constant over the entire surface of the substrate. The solidified body is sublimated uniformly over the entire surface of the substrate, and a gas-solid interface of the solidified body moves in a direction perpendicular to the front surface of the substrate. This precludes protrusions of a pattern from being pulled by the movement of the gas-solid interface of the solidified body, whereby the front surface of the substrate is dried well while the collapse of the pattern formed on the front surface of the substrate is prevented.

Substrate drying method and substrate drying apparatus

A substrate treating method and a substrate treating apparatus which can reduce the collapse of a pattern on a substrate. The substrate treating method includes a supply step of supplying a process liquid including a sublimable substance in a molten state to a pattern-formed surface of a substrate; a solidification step of solidifying the process liquid on the pattern-formed surface so as to form a solidified body; a sublimation step of subliming the solidified body so as to remove the solidified body from the pattern-formed surface; and an organic substance removal step of removing, when the solidified body is sublimed, an organic substance precipitated on a sublimation interface, and the organic substance removal step is performed so as to overlap at least part of the sublimation step.

Substrate treating method and substrate treating apparatus

Disclosed is a substrate treating method of performing drying treatment on a pattern-formed surface of a substrate, the substrate treating method comprising: a supplying step of supplying a substrate treating liquid containing a plastic crystalline material in a molten state to the pattern-formed surface of the substrate; a plastic crystalline layer forming step of bringing, on the pattern-formed surface, the plastic crystalline material into a state of a plastic crystal so as to form a plastic crystalline layer; and a removing step of changing the plastic crystalline material in the state of the plastic crystal into a gas state without an intermediate phase of liquid so as to remove the plastic crystalline material from the pattern-formed surface.

Substrate treating method, substrate treating liquid and substrate treating apparatus

A substrate processing of the present invention includes a supplying unit which supplies a process liquid containing a sublimable substance in a molten state to the pattern-formed surface of a substrate, a solidifying unit which solidifies the process liquid on the pattern-formed surface so as to form a solidified body and a sublimating unit which sublimes the solidified body so as to remove the solidified body from the pattern-formed surface, and the vapor pressure of the process liquid at a temperature of 20 to 25&#xb0; C. is equal to or more than 5 kPa, and the surface tension thereof at a temperature of 20 to 25&#xb0; C. is equal to or less than 25 mN/m.

Substrate treating apparatus and substrate treating method

Disclosed is a substrate treating method comprising: a supply step of supplying a process liquid including a drying auxiliary substance in a melted state to a pattern formation surface of a substrate; a solidification step of solidifying the process liquid on the pattern formation surface so as to from a solidified body; and a removal step of removing the solidified body from the pattern formation surface, wherein a substance which satisfies at least one of the following conditions, namely a melting entropy under atmospheric pressure at a melting point of 1 mJ/cm&#xb7;K or more but 500 mJ/cm&#xb7;K or less and a sublimation entropy under atmospheric pressure at 0&#xb0; C. of 1 mJ/cm&#xb7;K or more but 2000 mJ/cm&#xb7;K or less, is used as the drying auxiliary substance.

When a substrate on which a fine pattern is formed is dried with vapor, prevention of collapse of the pattern due to water originally contained in IPA to be stored has been a problem to be solved. A mixed liquid stored in a mixed liquid storage is vaporized to generate mixed vapor containing the IPA and water (water vapor). Then, a vapor dewatering unit connected to a vapor supply pipe through which the mixed vapor is fed removes water in the mixed vapor. This can reduce the concentration of water originally contained in the IPA to be stored before the IPA is supplied to the substrate, thereby suppressing collapse of the pattern.

Vapor supplying apparatus, vapor drying apparatus, vapor supplying method, and vapor drying method

After hydrophobization of surfaces of patterns, a liquid film of pure water or the like is formed on the surfaces of the substrate. At this stage, the liquid of the liquid film cannot be present between the patterns because of hydrophobization, and gas is present there. With the front surface of the substrate covered with the liquid film, a liquid to which ultrasonic waves are applied is supplied to the back surface of the substrate, whereby the back surface of the substrate is cleaned due to the cavitation collapse energy in the liquid caused by the ultrasonic waves. While collapse of cavitation occurs at the front surface of the substrate, the presence of the gas between the patterns prohibits collapse of cavitation between the patterns, the liquid film can prevent contamination while preventing collapse of the patterns, and the back surface of the substrate is cleaned favorably.

Substrate cleaning method and substrate cleaning apparatus

Disclosed is a substrate treating apparatus including the following units: a supplying unit which supplies a process liquid including a sublimable substance in a melt state on a pattern-formed surface of a substrate W; a solidifying unit which solidifies the process liquid on the pattern-formed surface to produce a solidified body; and a sublimating unit which sublimates the solidified body to remove the solidified body from the pattern-formed surface. In this apparatus, the sublimable substance includes a fluorinated carbon compound.

An ultrasonic wave applying liquid is supplied to one principal surface of a substrate while a liquid film of a first liquid being formed on another principal surface of the substrate. The ultrasonic wave applying liquid is obtained by applying ultrasonic waves to a second liquid. Ultrasonic vibration is transmitted to the other principal surface and the liquid film, thereby ultrasonically cleaning the other principal surface. The first liquid has a higher cavitation intensity, which is a stress per unit area acting on the substrate by cavitation caused in the liquid when ultrasonic waves are transmitted to the liquid present on the principal surface of the substrate, than the second liquid.

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Kyoto, Japan

Yosuke Hanawa