Rohm Co., Ltd.

Yoshizo Osumi

Tomohira Kikuchi

Hiroaki Matsubara

Daiki Yanagishima

Taro Nishioka

Toshiyuki Ishikawa

Tsunehisa Ono

A semiconductor a first device includes semiconductor chip and a second semiconductor chip to which different power-supply voltages are supplied, connection bonding wires connecting the first semiconductor chip and the second semiconductor chip to each other, and a sealing resin provided to fill a gap between a first lead frame on which the first semiconductor chip is mounted and a second lead frame on which the second semiconductor chip is mounted so as to cover the respective circumferences of the first semiconductor chip and the second semiconductor chip. The respective surfaces of the first lead frame and the second lead frame in the regions opposed to each other are covered with an insulating protection film including a material having higher electrical breakdown voltage than a material included in the sealing resin.

Semiconductor device

A semiconductor device includes a conductive support member, a first semiconductor element, and a second semiconductor element. The conductive support member includes a first die pad and a second die pad separated from each other in a first direction. The first die pad and the second die pad overlap each other when viewed along the first direction. The first die pad has a first main surface mounting the first semiconductor element, and a first back surface opposing the first main surface. The second die pad has a second main surface mounting the second semiconductor element, and a second back surface opposing the second main surface. When viewed along a second direction, a distance in the first direction between the first back surface and the second back surface is larger than a distance in the first direction between the first main surface and the second main surface.

A semiconductor device includes a conductive support member, a first semiconductor element, a second semiconductor element, an insulating element, and a sealing resin. The conductive support member includes a first die pad and a second die pad, which are separated from each other in a first direction. The first die pad and the second die pad overlap each other when viewed along the first direction. When viewed along a thickness direction, a peripheral edge of the first die pad has a first near-angle portion including a first end portion in a second direction orthogonal to both the thickness direction and the first direction. The first near-angle portion is separated from the second die pad in the first direction toward the first end portion in the second direction.

Semiconductor device with a transmitting insulating element

There is provided a semiconductor device including: a conductive support including a first die pad and a second die pad having a potential different from a potential of the first die pad; a first semiconductor element mounted on the first die pad; a second semiconductor element mounted on the second die pad; and a sealing resin that covers the first semiconductor element, the second semiconductor element, and at least a portion of the conductive support.

A signal transmission circuit which transmits N (N is a natural number of 2 or more) input signals includes a transmission signal generation portion, 2transmission portions and an output portion. The transmission signal generation portion generates 2transmission signals according to the N input signals. The 2transmission portions respectively transmit the 2transmission signals output from the transmission signal generation portion while performing electrical insulation. The output portion generates and outputs, based on the 2transmission signals transmitted by the 2transmission portions, N output signals that respectively indicate the N input signals. The transmission signal generation portion generates a pulse according to the N input signals and incorporates the pulse in only one of the 2transmission signals at the same time.

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Kyoto, Japan

Yoshizo Osumi