Canon Anelva Corporation

Mitsubishi Heavy Industries Limited

Phyzchemix Corporation

Yoshiyuki Ooba

Hitoshi Sakamoto

Toshihiko Nishimori

Naoki Yahata

Ikumasa Koshiro

Hiroshi Tonegawa

Yuzuru Ogura

Ryuichi Matsuda

Akitsugu Fujita

Masatomo Kamada

Makoto Yamaguchi

Yoshihiro Okamura

A Clgas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Clgas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus

In a metal film production apparatus, a copper plate member is etched with a Clgas plasma within a chamber to form a precursor comprising a Cu component and a Clgas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Clgas, and the Cl* is supplied into the chamber to withdraw a Clgas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Method and apparatus for production of metal film or the like

A process for producing a silicon compound can minimize the number of steps and can form a desired compound in a low-temperature environment. The process comprises: allowing a radical of a halogen gas to act on a memberto be etched, which is disposed within a chamberand is formed of a material containing an element capable of forming a compound with Si, while keeping the memberat a relatively high temperature, to form a gas of a precursor, which is a compound of the material and the halogen; holding a substrateaccommodated within the chamberat a relatively low temperature, with the Si interface of the substratebeing exposed, to adsorb the precursoronto the Si interface of the substrate; and then allowing the radical of the halogen gas to act on the precursoradsorbed onto the Si interface to reduce the precursor, thereby producing a compound of the material and Si.

Process for producing silicon compound

Barrier metal film production method

Interconnection structure

A low-alloy heat-resistant steel may be used to manufacturing a large element which has uniform superior high temperature properties through a surface layer to a center part. The low-alloy heat-resistant steel comprises carbon in an amount of 0.20 to 0.35% by weight, silicon in an amount of 0.005 to 0.35% by weight, manganese in an amount of 0.05 to 1.0% by weight, nickel in an amount of 0.05 to 0.3% by weight, chromium in an amount of 0.8 to 2.5% by weight, molybdenum in an amount of 0.1 to 1.5% by weight, tungsten in an amount of 0.1 to 2.5% by weight, vanadium in an amount of 0.05 to 0.3% by weight, phosphorus in an amount not greater than 0.012% by weight, sulfur in an amount not greater than 0.005% by weight, copper in an amount not greater than 0.10% by weight, aluminum in an amount not greater than 0.01% by weight, arsenic in an amount not greater than 0.01% by weight, tin in an amount not greater than 0.01% by weight, antimony in an amount not greater than 0.003% by weight, and the balance being iron and unavoidable impurities, and containing a metallic structure having an austenitic grain size number in a range of from 3 to 6.

Low-alloy heat-resistant steel, heat treatment method therefor, and turbine rotor comprising the same

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Yokohama, Japan

Yoshiyuki Ooba