Spp Technologies Co., Ltd.

Sumitomo Precision Products Co., Ltd.

Yoshiyuki Nozawa

Takashi Yamamoto

Shoichi Murakami

Hiroaki Kouno

Naoya Ikemoto

Masahiko Tanaka

Kazuo Kasai

A plasma etching method capable of forming a tapering etching structure having a smooth surface is provided. A fluorine-containing gas and a nitrogen gas are used and plasma is generated from these gases simultaneously, and a silicon substrate K is etched by the plasma while an etch-resistant layer is formed on the silicon substrate K by the plasma and then a fluorine-containing gas and an oxygen-containing gas are used and plasma is generated from these gases simultaneously, and the silicon substrate K is etched by the plasma while an etch-resistant layer is formed on the silicon substrate K by the plasma generated from the oxygen-containing gas, thereby forming a tapering etching structure H having a wide top opening width and a narrow bottom width.

Plasma etching method

A method for manufacturing a silicon structure according to the present invention includes, in a so-called dry-etching process wherein gas-switching is employed, the steps of: etching a portion in the silicon region at a highest etching rate under a high-rate etching condition such that the portion does not reach the etch stop layer; subsequently etching under a transition etching condition in which an etching rate is decreased with time from the highest etching rate in the high-rate etching condition; and thereafter, etching the silicon region under a low-rate etching condition of a lowest etching rate in the transition etching condition.

Method, apparatus and program for manufacturing silicon structure

The present invention relates to a plasma etching method in which a special area for detecting an end point needs not to be set and an equipment therefor. At an etching step of forming SFgas into plasma to etch an etching ground on a Si film, the step is configured by two steps of: a large-amount supply step of supplying a large amount of SFgas; and a small-amount supply step of supplying a small amount of SFgas. An end-point detecting processormeasures an emission intensity of Si or SiFx in the plasma at the small-amount supply step, and determines that an etching end point is reached when the measured emission intensity becomes equal to or less than a previously set reference value.

Plasma etching method capable of detecting end point and plasma etching device therefor

A method for etching a silicon substrate is presented in which fast etching speed and etching structures with smooth and perpendicular wall surfaces are achieved. In the etching step, a constant electric power is applied to the silicon substrate to provide a bias potential. Using a mixture of SFgas and fluorocarbon gas, there is a step mainly for the progression of dry etching of the etching ground surface. Similarly, using a mixture gas, there is a step mainly for forming a protective layer on the structure surfaces which are perpendicular with respect to the etching ground surface. These two steps are repeated one after the other. In the step for dry etching, the mixture gas is 5&#x2013;12 volume of fluorocarbon gas with respect to 100 volume SFgas. The mixture gas in the protective film formation step is a mixture of 2&#x2013;5 volume of SFgas with respect to 100 volume fluorocarbon gas.

Growing community of inventors

Amagasaki, Japan

Yoshiyuki Nozawa