Jtekt Corporation

Kabushiki Kaisha Toyota Chuo Kenkyusho

Yoshiyuki Funaki

Kazuyuki Nakanishi

Takayuki Kikuchi

Hiroyuki Mori

Toshiyuki Saito

Seiji Mizuno

Hideo Tachikawa

Junji Ando

Naoyuki Sakai

Takashi Iseki

Masafumi Koizumi

Yuka Yamada

Katsumi Sato

Yasuhiro Ozawa

Kyouji Kondo

Kyouji Itou

Mikio Fujioka

This invention adopts plasma-enhanced chemical vapor deposition using the apparatus including a chamber, a pair of rotary electrode reels including a feed-out reel and a take-up reel, a plasma source, a material gas supplier, and an exhaust unit, and includes applying a negative voltage applied to the rotary electrode reels from the plasma source while a conductive substrate is fed-out from the feed-out reel and is wound on the take-up reel so that the entire surface of the substrate portion between reels contacts the material gas, whereby plasma sheath is formed along the surface of the substrate portion between reels, and the material gas is activated in the plasma sheath and thus contacts the surface of the substrate, thus forming the film on the surface of the substrate.

Method and apparatus for forming film

An amorphous carbon film forming apparatus according to the present invention is characterized by being provided with a film forming furnace; plural workpiece fixturesfor supporting plural plate-like workpiecesin a state that the same are piled up vertically in parallel with the interval between facing surfaces of two vertically adjoining of the plate-like workpiecesbeing in a range of 2 to 30 millimeters, the plural workpiece fixturesbeing arranged within the film forming furnaceat a regular angular interval on a circle and being connected to a negative electrode; nozzlesprovided for supplying a processing gas and including at least one nozzle arranged at a center of the circle on which the plural workpiece fixturesare arranged and plural nozzles arranged at a regular angular interval on another circle which surrounds the workpieces fixturesradially outside thereof; and a plasma power supply connected to at least the workpiece fixtures. By controlling the supply gas pressure to be in a range of 13 to 1,330 Pa and a sheath width to be made in a range of 2 to 30 mm, the discharge is kept stably. As a consequence, it can be realized to form amorphous carbon films efficiently at a low cost.

Amorphous carbon film forming method and device

Growing community of inventors

Kanagawa, Japan

Yoshiyuki Funaki