Tokyo Electron Limited

Yoshitomo Sato

Naofumi Kishita

Shinichi Hatakeyama

Kazuyuki Tashiro

A substrate processing apparatus according to an embodiment includes a cassette placing section, a processing unit, a transfer area, and an image capturing unit. On the cassette placing section, a cassette accommodating a plurality of substrates is placed. The processing unit washes or etches a peripheral portion of each substrate taken out from the cassette. The transfer area is interposed between the cassette placing section and the processing unit, and the substrate is transferred therein. The image capturing unit is disposed in the transfer area to capture an image of the substrate processed by the processing unit. The image includes both of (i) a peripheral portion of an upper surface or a lower surface of the substrate and (ii) an end face of the substrate.

Substrate processing apparatus

There is provided a periphery coating method of coating a coating liquid on a periphery region of a substrate. The method includes performing a scan-in process of moving the coating liquid nozzle from an outside of an edge of the substrate to a position above the periphery region of the substrate while rotating the substrate and discharging the coating liquid from the coating liquid nozzle; and performing a scan-out process of moving the coating liquid nozzle from the position above the periphery region of the substrate to the outside of the edge of the substrate while rotating the substrate and discharging the coating liquid from the coating liquid nozzle. Further, in the scan-out process, the coating liquid nozzle is moved at a speed lower than a speed at which the coating liquid is moved to a side of an edge of the substrate.

Periphery coating apparatus, periphery coating method and storage medium therefor

A periphery coating unit performs a scan-in process of moving a resist liquid nozzlefrom an outside of an edge Wb of a wafer W to a position above a periphery region Wc of the wafer W while rotating the wafer W and discharging a resist liquid from the resist liquid nozzleand a scan-out process of moving the resist liquid nozzlefrom the position above the periphery region Wc of the wafer W to the outside of the edge Wb of the wafer W while rotating the wafer W and discharging the resist liquid from the resist liquid nozzleFurther, in the scan-out process, the resist liquid nozzleis moved at a speed vlower than a speed vat which the resist liquid is moved to a side of the edge Wb of the wafer W.

Growing community of inventors

Koshi, Japan

Yoshitomo Sato