Kabushiki Kaisha Toshiba

Yoshiteru Koseki

Mie Matsuo

Ikuko Inoue

Itsuko Sakai

Atsuko Kawasaki

Kazutaka Akiyama

Masahiro Sekiguchi

Kenichiro Hagiwara

Takuto Inoue

Hiroki Neko

Koushi Tozuka

Kazuhiko Nakadate

A solid state imaging device according to one embodiment of the present invention includes a substrate with a solid state imaging element, a first impurity layer, a plurality of external electrodes, and a translucent substrate. The first impurity layer is formed on a back surface side of the substrate, and forms a pn junction with the substrate. The plurality of external electrodes is formed on the back surface of the substrate and is electrically connected to the solid state imaging element. The translucent substrate is fixed to the substrate.

Solid state imaging device having a back surface impurity layer

According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate having first and second main surfaces, and a through hole passing through between the first and second main surfaces, a pad on the first main surface, a through electrode in the through hole, and a connection structure including a connection portion to directly connect the pad and the through electrode, and another connection portion to indirectly connect the pad and the through electrode. The method includes forming an isolation region in the first main surface, the isolation region being in a region where the through electrode is to be formed and being in a region other than the region where the through hole is to be formed, forming the pad, and forming the through hole by processing the substrate to expose a part of the pad.

Semiconductor device and manufacturing method thereof

Growing community of inventors

Iwate-ken, Japan

Yoshiteru Koseki