Tokyo Electron Limited

Tokyo Electron Limi Ted

Yoshiteru Fukuda

Takayuki Ishii

Tomohiro Iseki

Koji Yamashita

Nobuhiro Ogata

Koji Tanaka

Hiroaki Inadomi

Masami Yamashita

Mitsunori Nakamori

Tadashi Iino

Takashi Takekuma

Junya Minamida

Yosuke Kawabuchi

Takashi Terada

Keisuke Egashira

Kouzou Tachibana

Keiji Tanouchi

Takuro Masuzumi

Norio Wada

Kenichi Shigetomi

Goro Furutani

Kotaro Ooishi

Yasuyuki Kometani

Shouken Moro

Yu Tsurifune

A substrate processing apparatus includes an air supply configured to supply air into a place where a substrate is located; and a rectifying member, having multiple through holes, configured to rectify the air supplied from the air supply. The rectifying member includes a base; and a charge diffusion layer formed on a surface of the base. Electric charges attached to a surface of the rectifying member are diffused along the charge diffusion layer.

Substrate processing apparatus

Disclosed is a liquid processing method of drying a substrate held horizontally after supplying deionized water to the substrate. The liquid processing method includes: supplying the deionized water to a front surface of the substrate; supplying a first solvent to the front surface of the substrate after supplying the deionized water; supplying a water-repellent agent to the front surface of the substrate to impart water-repellency to the front surface of the substrate; supplying a second solvent to the front surface of the substrate to which water-repellency is imparted; and removing the second solvent from the front surface of the substrate. A specific gravity of the first solvent is smaller than a specific gravity of the water-repellent agent, and a specific gravity of the second solvent is larger than the specific gravity of the water-repellent agent.

Liquid processing method, substrate processing apparatus, and storage medium

Provided is a dye adsorption unit including a processing tank of which the upper surface is opened, in order to perform a batch dye adsorption process for a predetermined number of substrates. The dye adsorption unit further includes, as a moving system around the processing tank, a boat capable of going in and out of the processing tank from the upper opening, a boat transport unit that serves for the boat to go in and out of the processing tank, and a top cover for detachably closing the upper opening. Further, the dye adsorption unit includes a dye solution supply unit for supplying the dye solution into the processing tank, and a flow control unit for controlling the flow of the dye solution in the processing tank during the dye adsorption processing.

Dye adsorption apparatus and dye adsorption method

Resist coating treatments for application of a resist solution to removal of a resist film on a wafer edge portion. A laser irradiation unit applies a laser light in a resist coating unit. At the time of resist coating treatment, the resist solution is discharged onto a central portion of the rotated wafer from a resist solution supply nozzle to form a resist film on the wafer. Thereafter, the laser irradiation unit moves to an outer peripheral portion of the wafer and applies the laser light onto the resist film on the outer peripheral portion to dry the resist film on the outer peripheral portion. The application of laser light is continued, and the solvent supply nozzle moves to a position above the edge portion and supplies solvent to the resist film on the edge portion. The solvent dissolves and removes the resist film on the edge portion.

Coating treatment method and coating treatment apparatus

In the present invention, a plurality of suction ports are provided in a heating plate of a heat processing apparatus. The suction ports are provided at a central portion, an intermediate portion, and a peripheral portion of a substrate mounting surface of the heating plate, respectively. The warped state of the substrate before heat-processed is measured, so that when the substrate warps protruding downward, the suction start timing via a suction port corresponding to the outer peripheral portion of the substrate is set to be relatively early as compared to the suction start timings via the other suction ports, and when the substrate warps protruding upward, the suction start timing via the suction port corresponding to the central portion of the substrate is set to be relatively early as compared to the suction start timings via the other suction ports. This allows a portion of the substrate bending upward to be sucked first when the substrate is mounted on the heating plate, thereby quickly performing correction of the warpage of the substrate to uniformly heat the substrate.

Heat processing method, computer-readable storage medium, and heat processing apparatus

A spin chuck rotatably holds a semiconductor wafer, while resist is dropped on a surface of the semiconductor wafer through a resist application nozzle and thus applied thereon, and before the resist applied on the wafer dries, a cleaning liquid is supplied through a bevel cleaning nozzle to a portion of the wafer located at a peripheral portion thereof in a vicinity of a beveled portion to remove the resist adhering to the beveled portion. Thereafter, a film of the resist that is formed on the surface of the wafer is dried.

Method of processing a substrate and apparatus processing the same

To perform a series of resist coating treatments from application of a resist solution to removal of a resist film on a wafer edge portion in a shorter time. A laser irradiation unit for applying a laser light is provided in a resist coating unit. At the time of resist coating treatment, the resist solution is discharged onto a central portion of the rotated wafer from a resist solution supply nozzle to form a resist film on the wafer. Thereafter, the laser irradiation unit moves to an outer peripheral portion of the wafer and applies the laser light onto the resist film on the outer peripheral portion to dry the resist film on the outer peripheral portion. After the resist film on the outer peripheral portion dries, the application of laser light is continued, and the solvent supply nozzle moves to a position above the edge portion of the wafer and supplies the solvent to the resist film on the edge portion of the wafer. The supply of the solvent dissolves and removes the resist film on the edge portion of the wafer.

A coating process method in which a coating liquid is discharged onto the surface of a target substrate to be processed while rotating the target substrate so as to expand the coating liquid radially outward on the target substrate and, thus, to form a coated film comprises the step of detecting that the actual discharging of a coating liquid from a coating liquid discharging nozzle is started, and the step of controlling based on a signal of the detection at least one of the driving timing of a pump for allowing the coating liquid to be discharged from the coating liquid discharging nozzle, the operation timing of a valve mounted to a pipe for supplying the coating liquid into the coating liquid discharging nozzle, and the rotation starting or stopping timing of the target substrate.

Coating process method and coating process apparatus

In the present invention, a plurality of solvent supply nozzles for solvents having different solubility parameters are provided in a coating treatment apparatus. For a solvent supply nozzle for use at the time of edge rinse, a solvent supply nozzle is selected that discharges a removal solvent having a solubility parameter different by a set value or more from that of a coating solvent contained in a coating solution. During coating treatment, the coating solution is discharged from a coating solution supply nozzle onto the central portion of a rotated substrate to form a solution film having a predetermined film thickness. Immediately after the formation, edge rinse is started with the coating solution on the substrate not dry yet, in which the removal solvent is supplied to the peripheral portion of the substrate from the selected solvent supply nozzle. In this event, the supplied removal solvent repels the coating solution on the substrate, so that only the coating solution on the peripheral portion is appropriately removed. According to the present invention, a series of coating treatments including the edge rinse can be carried out in a shorter time.

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Koshi, Japan

Yoshiteru Fukuda