Denso Corporation

Yoshitaka Noda

Kazuhiko Kano

Hitoshi Yamaguchi

Toshiyuki Morishita

Junji Oohara

Akira Ogawa

Yukihiro Takeuchi

Jun Sakakibara

Naohiro Suzuki

Tetsuo Yoshioka

Youhei Oda

Yukihiko Takeuchi

Yuhei Shimizu

Daigorou Yamaguchi

A semiconductor device production method includes performing trench etching to form a trench in a thickness direction of a semiconductor layer so that both of a first pattern portion and a second pattern portion whose side walls face each other across the trench are formed. In the trench etching, the semiconductor layer is etched and removed while a protective film is formed on a surface of the semiconductor layer, and the trench etching is performed so that the first pattern portion and the second pattern portion are configured to have a same potential or a same temperature during the trench etching.

Method of production of semiconductor device having semiconductor layer and support substrate spaced apart by recess

A trench is etched in a semiconductor wafer by turning a first introduced gas introduced into a reaction chamber into plasma. A protection film is formed on a wall surface of the trench by turning a second introduced gas introduced into the reaction chamber into plasma. The protection film formed on a bottom surface of the trench is removed by turning a third introduced gas introduced into the reaction chamber into plasma. The reaction chamber is evacuated after the protection film formed on the bottom surface of the trench is removed.

Method of plasma etching a trench in a semiconductor substrate

In a manufacturing method of a semiconductor device, a depression is formed in a semiconductor substrate made of silicon or silicon compound semiconductor, and foreign substances including a protection layer in the depression is removed with a cleaning solution. The cleaning solution includes a mixed solution of hydrogen peroxide water to which a chelator is added, a basic solution, and water.

Manufacturing method of semiconductor device

An optical device includes a semiconductor substrate and an optical part having a plurality of columnar members disposed on the substrate. Each columnar member is disposed in a standing manner and adhered each other so that the optical part is provided. The optical part is integrated with the substrate. This optical part has high design freedom.

Optical device having micro lens array

Optical device having micro lens array and method for manufacturing the same

A semiconductor device includes a base P region, a source Nregion, and a drain Nregion formed in a surface layer portion on a principal surface in an Nsilicon layer. In the surface layer portion on the principal surface, an N well region is formed deeper than the drain Nregion in a region including the drain Nregion and is in contact with the base P region. A trench is formed so as to penetrate the base P region in a direction toward the drain Nregion from the source Nregion as a planar structure. A gate electrode is formed via a gate insulating film in the inside of the trench.

Horizontal MOS transistor

Pch-MOS transistors to which a power supply potential is applied are respectively surrounded by first trenches, and Nch-MOS transistors to which a ground potential is applied are respectively surrounded by second trenches. The first trenches are surrounded by a third trench, and the second trenches are surrounded by a fourth trench. A silicon layer existing inside the third trench is set at the power source potential. The silicon layer existing between the third and fourth trenches are set at a floating state. Accordingly, each thickness of oxide layers filling the trenches can be reduced.

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Bisai, Japan

Yoshitaka Noda